Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC2305
DESCRIPTION
・
・With
TO-3PN package
・High
breakdown voltage
・Fast
switching speed
・Wide
safe operating area
APPLICATIONS
・For
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
400
400
8
7
14
3
80
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CBO
V
EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA ;R
BE
=∞
I
C
=1m A; I
E
=0
I
E
=1m A; I
C
=0
I
C
=4A; I
B
=0.8A
I
C
=4A; I
B
=0.8A
V
CB
=400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.8A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
15
8
MIN
400
400
7
2SC2305
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
μA
μA
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2305
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
JMnic
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