MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9060M/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
•
Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — –31.5 dBc
•
Integrated ESD Protection
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
24 mm, 13 inch Reel.
•
TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
44 mm, 13 inch Reel.
MRF9060MR1
MRF9060MBR1
945 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265–07, STYLE 1
TO–270 DUAL LEAD
PLASTIC
MRF9060MR1
CASE 1337–01, STYLE 1
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
223
1.79
–65 to +150
175
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.56
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF9060MR1 MRF9060MBR1
1
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MRF9060MR1
MRF9060MBR1
Class
1 (Minimum)
M2 (Minimum)
C6 (Minimum)
C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22–A113
MRF9060MR1
MRF9060MBR1
Rating
1
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 450 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1.3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 4 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
101
53
2.5
—
—
—
pF
pF
pF
(continued)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
2.8
3.7
0.21
5.3
4
5
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF9060MR1 MRF9060MBR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
G
ps
17
18
—
dB
Symbol
Min
Typ
Max
Unit
η
37
40
—
%
IMD
—
–31.5
–28
dBc
IRL
—
–14.5
–9
dB
G
ps
—
18
—
dB
η
—
40
—
%
IMD
—
–31
—
dBc
IRL
—
–12.5
—
dB
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
3
V
GG
C6
RF
INPUT
B1
+
C7
L1
C4
Z1
C1
Z2
Z3
Z4
Z5
C2
Z6
Z7
Z8
C3
Z9
C5
Z10
DUT Z11
C9
Z12
Z13
Z14
L2
B2
C14
+
C15
+
C16
+
C17
V
DD
RF
OUTPUT
Z15
Z16
Z17
Z18
C13
C8
C10
C11
C12
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.100″ x 0.270″ x 0.080″, Taper
0.330″ x 0.270″ Microstrip
0.120″ x 0.270″ Microstrip
0.270″ x 0.520″ x 0.140″, Taper
0.240″ x 0.520″ Microstrip
0.340″ x 0.520″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060″ x 0.520″ Microstrip
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.130″ x 0.060″ Microstrip
0.300″ x 0.060″ Microstrip
0.210″ x 0.060″ Microstrip
0.600″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Figure 1. 930–960 MHz Broadband Test Circuit Schematic
Table 1. 930–960 MHz Broadband Test Circuit Component Designations and Values
Part
B1
B2
C1, C7, C13, C14
C2, C3, C11
C4, C5
C6, C15, C16
C8, C9
C10
C12
C17
L1, L2
N1, N2
WB1, WB2
Board Material
PCB
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors, B Case
0.8–8.0 Gigatrim Variable Capacitors
11 pF Chip Capacitors, B Case (MRF9060MR1)
10 pF Chip Capacitors, B Case (MRF9060MBR1)
10
mF,
35 V Tantalum Chip Capacitors
10 pF Chip Capacitors, B Case
3.9 pF Chip Capacitor, B Case
1.7 pF Chip Capacitor, B Case
220
mF
Electrolytic Chip Capacitor
12.5 nH Inductors
N–Type Panel Mount, Stripline
15 mil Brass Wear Blocks
30 mil Glass Teflon
,
ε
r
= 2.55 Copper Clad, 2 oz Cu
Etched Circuit Board
RF–35–0300
TO–270/TO–272 Surface/Bolt
Taconic
DSelectronics
Description
Value, P/N or DWG
95F786
95F787
100B470JP 500X
44F3360
100B110JP 500X
100B100JP 500X
93F2975
100B100JP 500X
100B3R9CP 500X
100B1R7BP 500X
14F185
A04T–5
3052–1648–10
Manufacturer
Newark
Newark
ATC
Newark
ATC
Newark
Newark
ATC
ATC
Newark
Coilcraft
Avnet
MRF9060MR1 MRF9060MBR1
4
MOTOROLA RF DEVICE DATA
C6
V
DD
B2
C7
L1
INPUT
C1
C2
C3
C4
WB1
CUT OUT AREA
C5
C14
C8
WB2
C9
L2
C15 C16
C17
V
GG
B1
OUTPUT
C10
C11
C12
C13
MRF9060M
MRF9060MB
Figure 2. 930–960 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
5
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