HL1326MF
InGaAsP Laser Diodes
Description
The HL1326MF is a 1.3 µm InGaAsP Fabry Perot laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source in short and medium range fiberoptic communication systems
and other applied optical equipment. It has high optical power with low drive current and wide
operating temperature range (–40 to +85°C). The compact package is suitable for module assembly.
Features
•
Wide operating temperature range: Topr = –40 to +85°C
•
High output power:
10 mW (Pulse)
5 mW (CW)
•
Low operating current: Iop (P
O
= 5 mW) = 20 mA (Typ @TC = 25°C)
Iop (P
O
= 5 mW) = 40 mA (Typ @TC = 85°C)
207
HL1326MF
Absolute Maximum Ratings
(T
C
= 25°C)
Item
Optical output power
Symbol
P
O
Rated Value
10 (Pulse)
*
1
5 (CW)
LD reverse voltage
PD reverse voltage
PD forward current
Operating temperature
Storage temperature
Note:
V
R (LD)
V
R (PD)
I
F (PD)
Topr
Tstg
2
15
1
–40 to +85
–40 to +100
Unit
mW
mW
V
V
mA
°C
°C
1. Maximum 50% duty cycle, maximum 1 µs pulse width
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Optical output power
Slope efficiency
Symbol
Ith
P
O
ηs
λc
σ
θ//
θ⊥
tr
tf
Is
I
(DARK)
Ct
Min
—
5
0.3
0.15
Lasing wavelength
Spectral width
Beam divergence (parallel)
Beam divergence (perpendicular)
Rise time
Fall time
Monitor current
PD dark current
PD capacitance
Typ
8
—
0.4
0.25
Max
20
—
—
—
Unit
mA
mW
mW/mA
Kink free*
1
T
C
= 25°C
T
C
= 85°C
P
O
= 5 mW, RMS
P
O
= 5 mW, RMS
P
O
= 5 mW, FWHM
P
O
= 5 mW, FWHM
10 to 90%
90 to 10%
P
O
= 5 mW, V
R(PD)
= 5 V
V
R(PD)
= 5 V
V
R(PD)
= 5 V, f = 1 MHz
Test Conditions
1280 1310 1340 nm
—
—
—
—
—
100
—
—
—
2
30
40
—
—
—
—
15
—
—
—
—
0.5
0.5
—
350
20
2
nm
deg.
deg.
ns
ns
µA
nA
pF
V
Photosensitivity saturation voltage V
R(S)
Note:
1. Kink free up to 5mW is confirmed at the tempratures of 10 °C, 25°C and 85°C.
208
HL1326MF
Typical Characteristic Curves
209
HL1326MF
Typical Characteristic Curves (cont)
210
HL1326MF
Typical Characteristic Curves (cont)
211
电源技术
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