MGSF1P02LT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
•
Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp
≤
10
µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
Symbol
VDSS
VGS
ID
IDM
PD
TJ, Tstg
R
θJA
TL
Value
20
±
20
750
2000
400
– 55 to
150
300
260
mW
°C
°C/W
°C
1
2
3
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750 mAMPS
20 VOLTS
RDS(on) = 350 mW
P–Channel
3
Unit
Vdc
Vdc
mA
1
2
MARKING
DIAGRAM
SOT–23
CASE 318
STYLE 21
PC
W
W
= Work Week
PIN ASSIGNMENT
Drain
3
1
2
Gate
Source
ORDERING INFORMATION
Device
MGSF1P02LT1
MGSF1P02LT3
Package
SOT–23
SOT–23
Shipping
3000 Tape & Reel
10,000 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 3
Publication Order Number:
MGSF1P02LT1/D
MGSF1P02LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
µAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.75 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge (See Figure 6)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2.)
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
IS
ISM
VSD
–
–
–
–
–
1.5
0.6
0.75
–
V
A
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50
Ω)
td(on)
tr
td(off)
tf
QT
–
–
–
–
–
2.5
1.0
16
8.0
6000
–
–
–
–
–
pC
ns
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
Coss
Crss
–
–
–
130
120
60
–
–
–
pF
VGS(th)
rDS(on)
–
–
0.235
0.375
0.350
0.500
1.0
1.7
2.4
Vdc
Ohms
V(BR)DSS
IDSS
–
–
IGSS
–
–
–
–
1.0
10
±100
nAdc
20
–
–
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
TYPICAL ELECTRICAL CHARACTERISTICS
1.5
I D , DRAIN CURRENT (AMPS)
1.25
1
0.75
0.5
0.25
0
1
1.5
2
2.5
-55°C
TJ = 150°C
25°C
1.5
I D , DRAIN CURRENT (AMPS)
1.25
1
3.0 V
VDS = 10 V
VGS = 3.5 V
3.25 V
0.75
0.5
2.75 V
2.5 V
2.25 V
0
1
2
3
4
5
6
7
8
9
10
0.25
3.5
0
3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
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2
MGSF1P02LT1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS
0.55
150°C
VGS = 4.5 V
0.4
0.38
0.36
0.34
0.32
0.3
0.28
0.26
0.24
0.22
0.2
0
0.2
0.4
0.6
0.8
1
1.2
25°C
-55°C
VGS = 10 V
150°C
0.5
0.45
25°C
0.4
-55°C
0.35
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.4
1.6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
1.25
1.2
VGS = 10 V
ID = 1.5 A
Figure 4. On–Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
8
6
4
2
0
1.15
1.1
VDS = 16 V
TJ = 25°C
1.05
1
VGS = 4.5 V
ID = .75 A
0.95
0.9
ID = 1.5 A
0.85
0.8
-55
-5
45
95
145
0
1000
2000
3000
4000
5000
6000
TJ, JUNCTION TEMPERATURE (°C)
QT, TOTAL GATE CHARGE (pC)
Figure 5. On–Resistance Variation with Temperature
Figure 6. Gate Charge
1
I D , DIODE CURRENT (AMPS)
1000
VGS = 0 V
f = 1 MHz
TJ = 25°C
Ciss
100
Coss
Crss
0.1
0.01
C, CAPACITANCE (pF)
TJ = 150°C
25°C
-55°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
10
0
2
4
6
8
10
VSD, DIODE FORWARD VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (Volts)
Figure 7. Body Diode Forward Voltage
Figure 8. Capacitance
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3
MGSF1P02LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
0.037
0.95
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, R
θJA
, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
TJ(max) – TA
R
θJA
one can calculate the power dissipation of the device which
in this case is 416 milliwatts.
PD =
150°C – 25°C
300°C/W
= 416 milliwatts
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
The 300°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 416
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Cladt. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
Always preheat the device.
•
The delta temperature between the preheat and
soldering should be 100°C or less.*
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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4
MGSF1P02LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
A
L
3
1
2
B S
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
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