LCB716 is a single-pole, normally closed (1-Form-B)
solid state relay that uses optically coupled relay
technology to provide an enhanced 3750V
rms
isolation barrier between the input and the output
of the relay. The efficient MOSFET output switch
uses IXYS Integrated Circuits Division's patented
OptoMOS architecture. The optically coupled output
is controlled by a highly efficient GaAlAs infrared
LED.
Features
•
3750V
rms
Input/Output Isolation
•
Low Drive Power Requirements
(TTL/CMOS Compatible)
•
No Moving Parts
•
High Reliability
•
Arc-Free With No Snubbing Circuits
•
No EMI/RFI Generation
•
Small 6-Pin Package
•
Machine Insertable, Wave Solderable
•
Tape & Reel, Surface Mount Version Available
Approvals
•
UL Recognized Component: File E76270
•
CSA Certified Component: Certificate 1175739
•
EN/IEC 60950-1 Certified Component:
TUV Certificate B 09 07 49410 006
Ordering Information
Applications
•
Sensor Circuitry
•
Instrumentation
•
Multiplexers
•
Data Acquisition
•
Electronic Switching
•
I/O Subsystems
•
Meters (gas, oil, electric and water)
•
Medical Equipment-Patient/Equipment Isolation
•
Security
•
Aerospace
•
Industrial Controls
Part #
LCB716
LCB716S
LCB716STR
Description
6-Pin DIP (50/Tube)
6-Pin Surface Mount (50/Tube)
6-Pin Surface Mount (1000/Reel)
Pin Configuration
AC/DC Configuration
+ Control
– Control
Do Not Use
1
2
3
6
5
4
Load
Do Not Use
Load
DC-Only Configuration
+ Control
– Control
Do Not Use
1
2
3
6
5
4
+ Load
– Load
Switching Characteristics
of Normally Closed Devices
Form-B
I
F
I
LOAD
10%
t
off
t
on
90%
Pb
DS-LCB716-R03
e
3
www.ixysic.com
1
I
NTEGRATED
C
IRCUITS
D
IVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Blocking Voltage
Reverse Input Voltage
Input Control Current
Peak (10ms)
Input Power Dissipation
1
Total Power Dissipation
2
Isolation Voltage, Input to Output
Operational Temperature
Storage Temperature
1
2
LCB716
Ratings
60
5
50
1
100
800
3750
-40 to +85
-40 to +125
Units
V
P
V
mA
A
mW
mW
V
rms
°C
°C
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Derate linearly 1.33 mW / ºC
Derate linearly 6.67 mW / ºC
Electrical Characteristics @ 25ºC
Parameter
Output Characteristics
Load Current
AC/DC Configuration, Continuous
DC Configuration, Continuous
Peak
On-Resistance
AC/DC Configuration
DC Configuration
Off-State Leakage Current
Output Capacitance
Switching Speeds
Turn-On
Turn-Off
Input Characteristics
Input Control Current to Activate
Input Control Current to Deactivate
Input Voltage Drop
Reverse Input Current
Common Characteristics
Capacitance, Input to Output
Conditions
Symbol
Min
Typ
Max
Units
-
-
t < 10ms
I
L
=500mA
I
L
=1000mA
I
F
=2mA, V
L
=60V
I
F
=2mA, V
L
=50V, f=1MHz
I
F
=5mA, V
L
=10V
I
L
=500mA
-
I
F
=5mA
V
R
=5V
-
I
L
I
LPK
R
ON
I
LEAK
C
OUT
t
on
t
off
I
F
I
F
V
F
I
R
C
I/O
-
-
-
-
-
-
-
-
-
-
0.1
0.9
-
-
-
-
-
1.63
0.4
-
280
0.58
0.76
-
-
1.2
-
3
500
1000
±1.2
2
0.5
1
-
3
3
2
-
1.4
10
-
mA
rms
/ mA
DC
mA
DC
A
P
A
pF
ms
mA
mA
V
A
pF
2
www.ixysic.com
R03
I
NTEGRATED
C
IRCUITS
D
IVISION
PERFORMANCE DATA* (@25ºC Unless Otherwise Noted)
30
25
Device Count (N)
Device Count (N)
15
20
15
10
5
0
1.220
1.225 1.230 1.235 1.240 1.245
LED Forward Voltage Drop (V)
0
0.507
0.530 0.553 0.576 0.599
Turn-On Time (ms)
0.622
Device Count (N)
LCB716
Typical LED Forward Voltage Drop
(N=50, I
F
=5mA)
20
Typical Turn-On Time
(N=50, I
F
=5mA, I
L
=100mA)
25
20
15
10
5
0
0.63
Typical Turn-Off Time
(N=50, I
F
=5mA, I
L
=100mA)
10
5
0.67
0.71
0.75
0.79
Turn-Off Time (ms)
0.83
25
20
15
10
5
0
Typical I
F
for Switch Operation
(N=50, I
L
=200mA)
20
Typical On-Resistance
(N=50, I
F
=0mA, I
L
=5mA)
20
Typical Blocking Voltage
(N=50, I
F
=2mA)
Device Count (N)
Device Count (N)
Device Count (N)
1.49
1.53
1.57
1.61
1.65
On-Resistance ( )
1.69
15
15
10
10
5
5
0
0.16
0.17
0.18
0.19
0.20
LED Forward Current (mA)
0.21
0
75
76
77
78
79
Blocking Voltage (V
P
)
80
0.40
0.35
LED Current (mA)
0.30
0.25
0.20
0.15
0.10
-40
Typical I
F
for Switch Operation
vs. Temperature
(I
L
=100mA)
423
422
Turn-On Time ( s)
421
420
419
418
Typical Turn-On Time
vs. LED Forward Current
(I
L
=100mA)
Turn-Off Time (ms)
2.5
2.0
1.5
1.0
0.5
0
Typical Turn-Off Time
vs. LED Forward Current
(I
L
=100mA)
-20
0
20
40
60
80
100
417
0
10
20
30
40
LED Forward Current (mA)
50
0
10
20
30
40
50
Temperature (ºC)
LED Forward Current (ma)
800
700
Turn-On Time ( s)
Typical Turn-On Time
vs. Temperature
(I
L
=100mA)
4.5
4.0
Turn-Off Time (ms)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Typical Turn-Off Time
vs. Temperature
(I
L
=100mA)
1.8
1.7
On-Resistance ( )
Typical On-Resistance
vs. Temperature
(I
F
=0mA, I
L
=100mA)
600
500
400
300
200
100
-40
-20
0
I
F
=5mA
I
F
=2mA
I
F
=2mA
1.6
1.5
1.4
1.3
1.2
I
F
=5mA
20
40
60
Temperature (ºC)
80
100
-40
-20
0
20
40
60
Temperature (ºC)
80
100
1.1
-40
-20
0
20
40
60
Temperature (ºC)
80
100
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R03
www.ixysic.com
3
I
NTEGRATED
C
IRCUITS
D
IVISION
PERFORMANCE DATA* (@25ºC Unless Otherwise Noted)
Maximum Load Current vs. Temperature
(I
F
=0mA)
Typical Load Voltage
vs. Load Current
(I
F
=0mA)
Blocking Voltage (V
P
)
LCB716
0.6
0.5
Load Current (A)
0.6
0.4
Load Current (A)
0.2
0.0
-0.2
-0.4
94
92
90
88
86
84
82
80
-40
Typical Blocking Voltage
vs. Temperature
(I
F
=5mA)
0.4
0.3
0.2
0.1
0.0
-40
-20
0
20
40
60
Temperature (ºC)
80
100
-0.6
-1.0 -0.75 -0.5 -0.25 0.0 0.25 0.5
Load Voltage (V)
0.75
1.0
-20
0
20
40
60
Temperature (ºC)
80
100
350
Leakage Current (nA)
300
250
200
150
100
50
0
-40
Typical Leakage vs.Temperature
Measured Across Pins 4&6
(I
F
=5mA, V
L
=60V)
1-Form-B Relay
Energy Rating Curve
1.5
1.3
Load Current (A)
1.1
0.9
0.7
0.5
0.3
10 s 100 s 1ms 10ms 100ms
Time
-20
0
20
40
60
Temperature (ºC)
80
100
1s
10s
100s
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
4
www.ixysic.com
R03
I
NTEGRATED
C
IRCUITS
D
IVISION
Manufacturing Information
Moisture Sensitivity
LCB716
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to
the latest version of the joint industry standard,
IPC/JEDEC J-STD-020,
in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper
operation of our devices when handled according to the limitations and information in that standard as well as to any
limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a
Moisture Sensitivity Level (MSL) rating
as shown below, and should be handled according
to the requirements of the latest version of the joint industry standard
IPC/JEDEC J-STD-033.
Device
LCB716 / LCB716S
Moisture Sensitivity Level (MSL) Rating
MSL 1
ESD Sensitivity
This product is
ESD Sensitive,
and should be handled according to the industry standard
JESD-625.
Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of
J-STD-020
must be observed.
Device
LCB716 / LCB716S
Maximum Temperature x Time
250ºC for 30 seconds
Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable. Since IXYS Integrated Circuits Division employs the use of silicone coating as
an optical waveguide in many of its optically isolated products, the use of a short drying bake could be necessary
if a wash is used after solder reflow processes. Chlorine- or Fluorine-based solvents or fluxes should not be used.
Cleaning methods that employ ultrasonic energy should not be used.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
Yamaha Motor Group旗下的i-PULSE有限公司日前已与华尔莱科技（Valor）结为合作伙伴关系，基于Valor的vPlan生产规划工具向i-PULSE组装设备的使用者提供完整的从设计到制造的NPI解决方案。在近期日本东京举办的Protec展会（6/11-6/13）上，i-PULSE首度展出了该新产品并将直接向其客户进行销售。 新产品的名称为“iPlan”，它将提供一系...[详细]
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
