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FM24V02-GTR

产品描述Memory Circuit, 32KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小396KB,共16页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
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FM24V02-GTR概述

Memory Circuit, 32KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM24V02-GTR规格参数

参数名称属性值
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度262144 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
混合内存类型N/A
功能数量1
端子数量8
字数32768 words
字数代码32000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织32KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
电源2.5/3.3 V
认证状态Not Qualified
座面最大高度1.75 mm
最大待机电流0.00015 A
最大压摆率0.001 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
宽度3.9 mm
Base Number Matches1

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FM24V02
256Kb Serial 3V F-RAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 3.4 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM24VN02)
Low Voltage, Low Power Operation
Low Voltage Operation 2.0V – 3.6V
Active Current < 150
A
(typ.
@ 100KHz
)
90
A
Standby Current (typ.)
5
A
Sleep Mode Current (typ.)
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
Description
The FM24V02 is a 256Kbit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24V02 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance orders of magnitude higher than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V02 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V02 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The devices are
available in industry standard 8-pin SOIC package
using a familiar two-wire (I
2
C) protocol. The
FM24VN02 is offered with a unique serial number
that is read-only and can be used to identify a board
or system. Both devices incorporate a read-only
Device ID that allows the host to determine the
manufacturer, product density, and product revision.
The devices are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Name
A0-A2
SDA
SCL
WP
VDD
VSS
Function
Device Select Address
Serial Data/address
Serial Clock
Write Protect
Supply Voltage
Ground
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 3.0
Jan. 2012
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
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