White Electronic Designs
WMF512K8-XXX5
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
FEATURES
Access Times of 60, 70, 90, 120, 150ns
Packaging
• 32 pin, Hermetic Ceramic, 0.600" DIP
(Package 300)
• 32 lead, Hermetic Ceramic, 0.400" SOJ
(Package 101)
• 32 pin, Rectangular Ceramic Leadless Chip
Carrier (Package 601)
• 32 lead Flatpack (Package 220)
1,000,000 Erase/Program Cycles Minimum
Sector Erase Architecture
• 8 equal size sectors of 64K bytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
Organized as 512Kx8
Commercial, Industrial and Military Temperature
Ranges
5 Volt Programming. 5V ± 10% Supply.
Low Power CMOS
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Page Program Operation and Internal Program
Control Time.
Note: For programming information refer to Flash Programming 4M5 Application Note.
This product is subject to change without notice.
Pin Configuration For WMF512K8-XXX5
32 DIP
32 CSOJ
32 Flatpack
Pin Configuration For WMF512K8-XCLX5
32 CLCC
Top View
A12
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
Top View
WE#
A15
A16
A18
V
CC
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
I/O1
I/O2
I/O3
I/O4
I/O5
Pin Description
A
0
-
18
I/O
0-7
CS#
OE#
WE#
V
CC
V
SS
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
I/O6
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE#
A10
CS#
I/O7
A17
V
CC
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Operating Temperature
Supply Voltage (V
CC
) (1)
Signal Voltage Range(any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance - erase/program cycles (Mil Temp)
A9 Voltage for sector protect (V
ID
) (3)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
20
100,000 min
-2.0 to +14.0
Unit
°C
V
V
°C
°C
years
cycles
V
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A9 Voltage for Sector Protect
WMF512K8-XXX5
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IH
V
IL
T
A
T
A
V
ID
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
V
CC
+ 0.5
+0.8
+125
+85
12.5
Unit
V
V
V
°C
°C
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs
may overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC voltage on
output and I/O pins is V
CC
+ 0.5V. During voltage transitions, outputs may overshoot
to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is
+13.5V which may overshoot to 14.0 V for periods up to 20ns.
CAPACITANCE
T
A
= +25°C
Parameter
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
Symbol
CAD
COE
CWE
CCS
CI/O
Conditions
Max Unit
VI/O = 0 V, f = 1.0 MHz 15 pF
VIN = 0 V, f = 1.0 MHz 15 pF
VIN = 0 V, f = 1.0 MHz 15 pF
VIN = 0 V, f = 1.0 MHz 15 pF
VI/O = 0 V, f = 1.0 MHz 15 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS — CMOS COMPATIBLE
V
CC
= 5.0V, V
SS
= 0V, -55°C ≤ T
A
≤ +125°C
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Symbol
I
LI
I
LOx32
I
CC1
I
CC2
I
CC4
V
OL
V
OH1
V
LKO
Conditions
V
CC
= 5.5, V
IN
= GND to V
CC
V
CC
= 5.5, V
IN
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz
CS# = V
IL
, OE# = V
IH
V
CC
= 5.5, CS# = V
IH
, f = 5MHz
I
OL
= 8.0 mA, V
CC
= 4.5
I
OH
= -2.5 mA, V
CC
= 4.5
Min
Max
10
10
50
60
1.6
0.45
4.2
Unit
µA
µA
mA
mA
mA
V
V
V
0.85 x V
CC
3.2
NOTES:
1. The I
CC
current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: V
IL
= 0.3V, V
IH
= V
CC
- 0.3V
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
V
CC
= 5.0V, V
SS
= 0V, -55°C ≤ T
A
≤ +125°C
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
0
11
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
-60
Min
60
0
40
0
40
0
40
20
300
15
0
-70
Max
Min
70
0
45
0
45
0
45
20
300
15
0
11
-90
Max
Min
90
0
45
0
45
0
45
20
300
15
0
11
-120
Max
Min
120
0
50
0
50
0
50
20
300
15
0
11
-150
Min
150
0
50
0
50
0
50
20
300
15
11
Max
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
sec
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
64
64
64
64
64
sec
AC TEST CIRCUIT
I
OL
Current Source
AC Test Conditions
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
V
Z
1.5V
(Bipolar Supply)
Typ
VIL = 0, VIH = 3.0
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
I
OH
Current Source
Notes:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
V
CC
= 5.0V, -55°C ≤ T
A
≤ +125°C
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
VCC Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
NOTES:
1. Typical value for t
WHWH1
is 7µs.
2. Typical value for t
WHWH2
is 1sec.
3. Typical value for Chip Erase time is 8sec.
4. For Toggle and Data# Polling.
WMF512K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
-60
Min
60
0
40
0
40
0
40
20
Max
Min
70
0
45
0
45
0
45
20
-70
Max
Min
90
0
45
0
45
0
45
20
-90
Max
-120
Min
120
0
50
0
50
0
50
20
Max
-150
Min
150
0
50
0
50
0
50
20
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
ms
µs
sec
ns
ns
sec
300
15
t
VCS
t
OES
t
OEH
0
50
11
0
10
64
0
10
0
50
300
15
0
50
11
0
10
64
300
15
0
50
11
0
10
64
300
15
0
50
11
0
10
64
300
15
11
64
AC CHARACTERISTICS – READ ONLY OPERATIONS
V
CC
= 5.0V, -55°C ≤ T
A
≤ +125°C
-60
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Address, CS# or OE# Change,
whichever is First
NOTES:
1. Guaranteed by design, but not tested
-70
Max
Min
70
60
60
35
20
20
70
70
35
20
20
0
Max
-90
Min
90
90
90
35
20
20
0
Max
-120
Min
120
120
120
50
30
30
0
Max
-150
Min
150
150
150
55
35
35
0
Max
Unit
Symbol
Min
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
0
60
ns
ns
ns
ns
ns
ns
ns
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
White Electronic Designs
AC WAVEFORMS FOR READ OPERATIONS
t
RC
Addresses
t
ACC
CS#
Addresses Stable
WMF512K8-XXX5
t
DF
OE#
t
OE
WE#
t
CE
t
OH
High Z
Outputs
High Z
Output Valid
WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED
Data# Polling
Addresses
5555H
t
WC
CS#
t
GHWL
OE#
t
WP
WE#
t
CS
t
WPH
t
DH
Data
t
DS
t
OH
A0H
PD
t
OE
t
DF
t
WHWH1
t
AS
PA
t
AH
PA
t
RC
I/O
7
#
I/O
OUT
5.0 V
t
CE
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. I/O
7
# is the output of the complement of the data written to the device.
4. I/O
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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