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5962-9309103HXX

产品描述EEPROM Module, 512KX8, 250ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32
产品类别存储    存储   
文件大小130KB,共20页
制造商White Microelectronics
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5962-9309103HXX概述

EEPROM Module, 512KX8, 250ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32

5962-9309103HXX规格参数

参数名称属性值
包装说明DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32
Reach Compliance Codeunknown
最长访问时间250 ns
其他特性AUTOMATIC WRITE
JESD-30 代码R-CDIP-T32
长度42.4 mm
内存密度4194304 bit
内存集成电路类型EEPROM MODULE
内存宽度8
功能数量1
端子数量32
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织512KX8
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
编程电压5 V
认证状态Not Qualified
座面最大高度6.98 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
宽度15.24 mm
Base Number Matches1

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REVISIONS
LTR
A
B
C
D
DESCRIPTION
Added device types 02, 03, and 04. Made changes to tables I and II.
Added device type 05. Added case outline Y. Redrew entire
document.
Changes in accordance with NOR 5962-R154-96.
Update drawing to the current requirements of MIL-PRF-38534.
DATE (YR-MO-DA)
93-04-15
96-04-22
96-06-24
05-08-17
APPROVED
K. Cottongim
K. A. Cottongim
Kendall A. Cottongim
Raymond Monnin
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
D
15
D
16
D
17
D
18
REV
SHEET
PREPARED BY
Steve L. Duncan
CHECKED BY
Michael Jones
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
D
10
D
11
D
12
D
13
D
14
STANDARD
MICROCIRCUIT
DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
POST OFFICE BOX 3990
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
APPROVED BY
Kendall A. Cottongim
MICROCIRCUIT, HYBRID, MEMORY, 512K X
8-BIT, ELECTRICALLY ERASABLE
PROGRAMMABLE READ ONLY MEMORY
DRAWING APPROVAL DATE
93-01-22
REVISION LEVEL
D
SIZE
A
SHEET
CAGE CODE
67268
1 OF
18
5962-93091
5962-E483-05
DSCC FORM 2233
APR 97

5962-9309103HXX相似产品对比

5962-9309103HXX 5962-9309105HYC 5962-9309105HYX 5962-9309101HXX 5962-9309102HXX 5962-9309104HXX 5962-9309105HYA
描述 EEPROM Module, 512KX8, 250ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 EEPROM Module, 512KX8, 200ns, Parallel, CMOS, DIP-32 EEPROM Module, 512KX8, 200ns, Parallel, CMOS, DIP-32 EEPROM Module, 512KX8, 150ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 EEPROM Module, 512KX8, 300ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 EEPROM Module, 512KX8, 200ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 EEPROM Module, 512KX8, 200ns, Parallel, CMOS, DIP-32
包装说明 DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 DIP-32 DIP-32 DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32 DIP-32
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Base Number Matches 1 1 1 1 1 1 1
最长访问时间 250 ns - 200 ns 150 ns 300 ns - 200 ns
JESD-30 代码 R-CDIP-T32 - R-XDIP-T32 R-CDIP-T32 R-CDIP-T32 - R-XDIP-T32
长度 42.4 mm - 42.4 mm 42.4 mm 42.4 mm - 42.4 mm
内存密度 4194304 bit - 4194304 bit 4194304 bit 4194304 bit - 4194304 bit
内存集成电路类型 EEPROM MODULE - EEPROM MODULE EEPROM MODULE EEPROM MODULE - EEPROM MODULE
内存宽度 8 - 8 8 8 - 8
功能数量 1 - 1 1 1 - 1
端子数量 32 - 32 32 32 - 32
字数 524288 words - 524288 words 524288 words 524288 words - 524288 words
字数代码 512000 - 512000 512000 512000 - 512000
工作模式 ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS
最高工作温度 125 °C - 125 °C 125 °C 125 °C - 125 °C
最低工作温度 -55 °C - -55 °C -55 °C -55 °C - -55 °C
组织 512KX8 - 512KX8 512KX8 512KX8 - 512KX8
封装主体材料 CERAMIC, METAL-SEALED COFIRED - UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - UNSPECIFIED
封装代码 DIP - DIP DIP DIP - DIP
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 IN-LINE - IN-LINE IN-LINE IN-LINE - IN-LINE
并行/串行 PARALLEL - PARALLEL PARALLEL PARALLEL - PARALLEL
编程电压 5 V - 5 V 5 V 5 V - 5 V
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified - Not Qualified
座面最大高度 6.98 mm - 4.6 mm 6.98 mm 6.98 mm - 4.6 mm
最大供电电压 (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V - 5.5 V
最小供电电压 (Vsup) 4.5 V - 4.5 V 4.5 V 4.5 V - 4.5 V
标称供电电压 (Vsup) 5 V - 5 V 5 V 5 V - 5 V
表面贴装 NO - NO NO NO - NO
技术 CMOS - CMOS CMOS CMOS - CMOS
温度等级 MILITARY - MILITARY MILITARY MILITARY - MILITARY
端子形式 THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
端子节距 2.54 mm - 2.54 mm 2.54 mm 2.54 mm - 2.54 mm
端子位置 DUAL - DUAL DUAL DUAL - DUAL
宽度 15.24 mm - 15.24 mm 15.24 mm 15.24 mm - 15.24 mm
厂商名称 - - - White Microelectronics White Microelectronics White Microelectronics White Microelectronics

 
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