Freescale Semiconductor
Technical Data
Document Number: MW6S010
Rev. 1, 5/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
•
Typical Two - Tone Performance @ 960 MHz, V
DD
= 28 Volts, I
DQ
=
125 mA, P
out
= 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
On - Chip RF Feedback for Broadband Stability
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
N Suffix Indicates Lead - Free Terminations
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
61.4
0.35
- 65 to +175
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
Symbol
R
θJC
Value
(1.2)
2.85
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 125 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 0.3 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
23
10
0.32
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
—
—
2.3
3.1
0.27
3
—
0.35
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 125 mA, P
out
= 10 W PEP, f = 960 MHz,
Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
η
D
IMD
IRL
17.5
31
—
—
18
32
- 37
- 18
20.5
—
- 33
- 10
dB
%
dBc
dB
Typical Performances
(In Freescale 450 MHz Demo Board, 50
οhm
system) V
DD
= 28 Vdc, I
DQ
= 150 mA, P
out
= 10 W PEP,
420 MHz<Frequency<470 MHz, Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
η
D
IMD
IRL
—
—
—
—
20
33
- 40
- 10
—
—
—
—
dB
%
dBc
dB
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
+
C2
+
C3
C4
C6
C7
C10
C11
C12
C13
L1
RF
OUTPUT
+
C15
C16
+
C18
+
C19
V
SUPPLY
RF
INPUT
R1
Z1
C1
Z2
Z3
Z4
DUT
Z5
Z6
C20
Z7
C14
C5
C8
C9
C17
Z1
Z2
Z3
Z4
0.073″ x 0.223″ Microstrip
0.112″ x 0.070″ Microstrip
0.213″ x 0.500″ Microstrip
0.313″ x 1.503″ Microstrip
Z5
Z6
Z7
PCB
0.313″ x 0.902″ Microstrip
0.073″ x 1.080″ Microstrip
0.073″ x 0.314″ Microstrip
Rogers ULTRALAM 2000, 0.031″,
ε
r
= 2.55
Figure 1. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 900 MHz
Table 6. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 900 MHz
Part
B1
C1, C6, C11, C20
C2, C18, C19
C3, C16
C4, C15
C5, C8, C17
C7, C12
C9, C10, C13
C14
L1
R1
Ferrite Bead
47 pF Chip Capacitors
22
µF,
35 V Tantalum Capacitors
220
µF,
63 V Electrolytic Capacitors, Radial
0.1
µF
Chip Capacitors
0.8 - 8.0 pF Variable Capacitors, Gigatrim
24 pF Chip Capacitors
6.8 pF Chip Capacitors
7.5 pF Chip Capacitor
12.5 nH Inductor
1 kΩ Chip Resistor
Description
Part Number
2743019447
100B470JP500X
T491D226K035AS
13668221
CDR33BX104AKWS
272915L
100B240JP500X
100B6R8JP500X
100B7R5JP500X
A04T - 5
CRCW12061001F100
Manufacturer
Fair - Rite
ATC
Kemet
Phillips
Kemet
Johanson
ATC
ATC
ATC
Coilcraft
Vishay - Dale
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
3
C3
C7
C4
C10
C2
B1
C6
C11
C13
R1
C1
C9
L1
C12
C16
C15
C18
C19
C20
C17
C14
C5
C8
MW6S010N
Figure 2. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 900 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
— 900 MHz
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
−8
48
44
40
36
32
28
24
20
16
910
920
930
940
950
960
IMD
G
ps
V
DD
= 28 Vdc, P
out
= 10 W (Avg.)
I
DQ
= 125 mA, 100 kHz Tone Spacing
−16
−18
−20
−22
−24
−26
970
IRL
η
D
−10
−12
−14
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance
@ P
out
= 10 Watts
20
−10
−20
−30
−40
7th Order
−50
−60
−70
0.1
1
10
100
P
out
, OUTPUT POWER (WATTS) AVG.
V
DD
= 28 Vdc, I
DQ
= 125 mA
f = 945 MHz, Two −Tone Measurements
100 kHz Tone Spacing
3rd Order
I
DQ
= 190 mA
19
G
ps
, POWER GAIN (dB)
125 mA
18
90 mA
IMD, INTERMODULATION DISTORTION (dBc)
5th Order
17
16
15
V
DD
= 28 Vdc, f = 945 MHz
Two −Tone Measurements
100 kHz Tone Spacing
0.1
1
10
100
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−15
−20
−25
−30
−35
−40
−45
−50
−55
0.1
1
5th Order
7th Order
3rd Order
V
DD
= 28 Vdc, P
out
= 10 W (Avg.)
I
DQ
= 125 mA, Two −Tone Measurements
Center Frequency = 945 MHz
48
Ideal
P
out
, OUTPUT POWER (dBm)
46
P3dB = 43.14 dBm (20.61 W)
44
P1dB = 42.23 dBm (16.71 W)
Actual
42
V
DD
= 28 Vdc, I
DQ
= 125 mA
Pulsed CW, 8
µsec(on),
1 msec(off)
Center Frequency = 945 MHz
19
21
23
25
27
29
40
38
10
100
TWO −TONE SPACING (MHz)
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
5
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