1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions and
T
A
= 25°C.
3. Board (package belly) temperature T
B
is
25°C. Derate 21 mW/°C for T
B
> 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Electrical Specifications
T
A
= 25°C, DC =5V @ 26 mA, RF =1.91 GHz, Pin
RF
= -10 dBm; LO =1.7 GHz, Pin
LO
= -3 dBm, IF = 210 MHz unless otherwise specified.
Symbol
F
RF
F
LO
F
IF
Id
G
c[3]
IIP3
[2]
NF
[3]
P1dB
[3]
RL
RF
RL
LO
RL
IF
ISOL
L-R
ISOL
L-I
ISOL
R-L
Parameter and Test Condition
Frequency Range, RF
Frequency Range, LO
Frequency Range, IF
Device Current
Conversion Loss
Input Third Order Intercept Point
SSB Noise Figure
Output Power at 1 dB Compression
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO-RF Isolation
LO-IF Isolation
RF-IF Isolation
Units
MHz
MHz
MHz
mA
dB
dBm
dB
dBm
dB
dB
dB
dB
dB
dB
Min.
400
400
DC
22
Typ.
Max.
3500
3500
300
Std Dev.
[1]
26
6
30
6.9
0.89
0.08
0.43
22
27
12.5
9
19
24
21
34
56
33
Notes:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of
this product and is intended to be used as an estimate for distribution of the typical specification.
2. IIP3 test condition: F
RF1
= 1.91 GHz, F
RF2
= 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency F
LO
= 1.7 GHz.
3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Simplified Schematic
Figure 1. IAM-92516 Test Board.
2
Figure 2. Schematic Diagram of IAM-92516 Test Circuit.
240
200
160
120
80
40
0
25
200
150
Cpk=3.7
Stdev=0.43
160
120
Cpk=1.5
Stdev=0.89
120
FREQUENCY
Cpk=3.67
Stdev=0.079
FREQUENCY
FREQUENCY
–3 Std
+3 Std
80
60
40
0
22
–3 Std
+3 Std
90
–3 Std
60
+3 Std
30
26
27
IIP3
28
29
24
26
ID
28
30
0
-6.4
-6.2
-6
-5.8
-5.6
-5.4
CONVERSION LOSS
LSL=22.0, Nominal=26.8
LSL=22.0, Nominal=26.0, USL=30.0
LSL=-6.9, Nominal=-6.0
Figure 3. Normal Distribution of IIP3, ID, and Conversion Loss.
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
6. Conversion Loss data has de-embed balun loss 0.8 dB @ 210 MHz.
3
IAM-92516 Typical Performance
DC =5V @ 26 mA, RF =1.91 GHz, Pin
RF
= -10 dBm; LO = 1.7 GHz, Pin
LO
= -3 dBm, IF = 210 MHz unless otherwise specified
-5
-5.2
-5.4
33
31
29
27
30
29
28
CONVERSION LOSS (dB)
-5.6
-5.8
IIP3 (dBm)
-6.2
-6.4
-6.6
-6.8
-7
-7.2
-7.4
-20°C
-40°C
+25°C
+85°C
25
23
21
19
17
-20°C
-40°C
+25°C
+85°C
Ids (mA)
-6
27
26
25
24
23
-20°C
-40°C
+25°C
+85°C
-7.6
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
15
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
22
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
LO POWER (dBm)
LO POWER (dBm)
Figure 4. Conversion Loss vs LO Power
Over Temperature.
11
10
Figure 5. IIP3 vs LO Power Over Temperature.
Figure 6. Ids vs LO Power Over Temperature.
31
29
27
-20°C
-40°C
+25°C
+85°C
-52
-54
-20°C
-40°C
+25°C
+85°C
SSB NOISE FIGURE (dB)
9
ISOLATION LO-IF (dB)
25
23
21
19
17
15
13
11
9
7
-56
-58
-60
-62
-64
P1dB (dBm)
8
7
6
5
-20°C
-40°C
+25°C
+85°C
4
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
5
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
-66
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
LO POWER (dBm)
LO POWER (dBm)
Figure 7. P1dB vs LO Power Over Temperature.
Figure 8. SSB NF vs LO Power Over
Temperature.
Figure 9. LO-IF Isolation vs LO Power Over
Temperature.
Notes:
7. Typical performance plots are based on test
board shown at Figure 1 with matching circuit
stated at Figure 2.
8. Operating temperature range of Mini-circuit
RF transformer (model: TCM4-6T) is - 20
0
C to
85
0
C.
9. Conversion loss, P1dB and NF plots have de-
embedded balun loss 0.8 dB @ 210 MHz.
4
IAM-92516 Typical Performance,
continued
DC = 5V @ 26 mA, RF =1.91 GHz, Pin
RF
= -10 dBm; LO = 1.7 GHz, Pin
LO
= -3 dBm, IF = 210 MHz unless otherwise specified
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
-42
-44
-20°C
-40°C
+25°C
+85°C
-30
-31
-32
0
-2
-4
ISOLATION LO-RF (dB)
ISOLATION RF-IF (dB)
-33
-34
-35
-36
-37
-38
-39
-20°C
-40°C
+25°C
+85°C
RF RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
-20
0 0.5
1 1.5 2
2.5 3 3.5 4 4.5 5 5.5 6
-46
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
-40
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
LO POWER (dBm)
LO POWER (dBm)
FREQUENCY (GHz)
Figure 10. LO-RF Isolation vs LO Power Over
Temperature.
0
-5
Figure 11. RF-IF Isolation vs LO Power Over
Temperature.
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
Figure 12. RF Return Loss vs Frequency.
LO RETURN LOSS (dB)
-10
-15
-20
-25
-30
0 0.5
1 1.5 2
2.5 3 3.5 4 4.5 5 5.5 6
IF RETURN LOSS (dB)
FREQUENCY (GHz)
50 100 150 200 250 300 350 400 450 500
FREQUENCY (MHz)
Figure 13. LO Return Loss vs Frequency.
Figure 14. IF Return Loss vs Frequency.
LO Harmonics (nLO)
0
1
0
0
67.3
>90
>90
>90
2
18.5
51.3
56.6
>90
>90
>90
3
12.9
60.6
78.3
>90
>90
>90
4
11.6
42.8
64.7
>90
>90
>90
5
5.8
55.2
87.2
>90
>90
>90
RF Harmonics (mRF)
0
1
2
3
4
5
—
19.5
39.9
51.2
68.9
>90
Harmonic Intermodulation Suppression
[10 ]
Note:
10. Test Conditions of Harmonic Intermodulation Suppression:
a) RF =1.91 GHz @-10 dBm and LO =1.7 GHz @-3 dBm.
b) RF harmonics and intermodulation products are referenced to a desired signal produced by
frequency IF = 210 MHz.
c) LO Harmonics are referenced to the -3 dBm LO drive signal.
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
