S-8213 Series
www.sii-ic.com
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.4
_00
© SII Semiconductor Corporation, 2012-2017
The S-8213 Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates a high-accuracy
voltage detection circuit and a delay circuit. Short-circuits between VC3 to VSS accommodate serial connection of two cells or
three cells.
Features
•
High-accuracy voltage detection circuit for each cell
Overcharge detection voltage n (n = 1 to 3)
4.100 V to 4.500 V (in 50 mV steps)
Accuracy:
±25
mV (Ta =
+25°C)
Accuracy:
±30
mV (Ta = 0°C to
+60°C)
Overcharge hysteresis voltage n (n = 1 to 3)
0 V
±
25 mV,
−0.05
V
±
25 mV,
−0.40
V
±
80 mV
Delay times for overcharge detection can be set by an internal circuit only (external capacitors are unnecessary)
Output form is selectable:
CMOS output, Nch open-drain output
Output logic is selectable:
Active "H", Active "L"
High-withstand voltage:
Absolute maximum rating 26 V
Wide operation voltage range:
3.6 V to 24 V
Wide operation temperature range:
Ta =
−40°C
to
+85°C
Low current consumption
At V
CUn
−
1.0 V for each cell:
2.0
μA
max. (Ta =
+25°C)
At 2.0 V for each cell:
0.3
μA
max. (Ta =
+25°C)
Lead-free (Sn 100%), halogen-free
•
•
•
•
•
•
•
•
Application
•
Lithium-ion rechargeable battery pack (for secondary protection)
Packages
•
•
SOT-23-6
SNT-6A
1
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK (SECONDARY PROTECTION)
S-8213 Series
Block Diagram
1. CMOS output product
Rev.1.4
_00
VDD
VC1
Overcharge
detection
comparator 1
+
−
Reference voltage 1
VC2
Overcharge
detection
comparator 2
+
−
Oscillator
Control
logic
Overcharge
detection
/
release
delay circuit
CO
Reference voltage 2
VC3
Overcharge
detection
comparator 3
+
−
Reference voltage 3
VSS
Remark
The diodes in the figure are parasitic diodes.
Figure 1
2
Rev.1.4
_00
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK (SECONDARY PROTECTION)
S-8213 Series
2. Nch open-drain output product
VDD
VC1
Overcharge
detection
comparator 1
+
−
Reference voltage 1
VC2
Overcharge
detection
comparator 2
+
−
Oscillator
Control
logic
Overcharge
detection
/
release
delay circuit
CO
Reference voltage 2
VC3
Overcharge
detection
comparator 3
+
−
Reference voltage 3
VSS
Remark
The diodes in the figure are parasitic diodes.
Figure 2
3
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK (SECONDARY PROTECTION)
S-8213 Series
Product Name Structure
1. Product name
S-8213
xxx
-
xxxx
U
Rev.1.4
_00
Environmental code
U:
Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications
*1
M6T1: SOT-23-6, Tape
I6T1: SNT-6A, Tape
Serial code
*2
Sequentially set from AAA to AAZ
*1.
Refer to the tape drawing.
*2.
Refer to "3.
Product name list".
2. Packages
Table 1 Package Drawing Codes
Package Name
SOT-23-6
SNT-6A
Dimension
MP006-A-P-SD
PG006-A-P-SD
Tape
MP006-A-C-SD
PG006-A-C-SD
Reel
MP006-A-R-SD
PG006-A-R-SD
Land
−
PG006-A-L-SD
3. Product name list
3. 1 SNT-6A
Table 2
Overcharge
Overcharge
Overcharge
Hysteresis
Detection
Product Name
Detection
Output Form
Output Logic
Voltage [V
HC
]
Delay Time [t
CU
]
Voltage [V
CU
]
S-8213AAB-I6T1U
4.300 V
−0.40
V
2.0 s
CMOS output
Active "H"
S-8213AAC-I6T1U
4.350 V
−0.40
V
2.0 s
CMOS output
Active "H"
S-8213AAD-I6T1U
4.400 V
−0.40
V
2.0 s
CMOS output
Active "H"
S-8213AAE-I6T1U
4.450 V
−0.40
V
2.0 s
CMOS output
Active "H"
S-8213AAF-I6T1U
4.500 V
−0.40
V
2.0 s
CMOS output
Active "H"
S-8213AAG-I6T1U
4.300 V
−0.40
V
4.0 s
CMOS output
Active "H"
S-8213AAH-I6T1U
4.350 V
−0.40
V
4.0 s
CMOS output
Active "H"
S-8213AAI-I6T1U
4.400 V
−0.40
V
4.0 s
CMOS output
Active "H"
S-8213AAJ-I6T1U
4.450 V
−0.40
V
4.0 s
CMOS output
Active "H"
S-8213AAK-I6T1U
4.500 V
−0.40
V
4.0 s
CMOS output
Active "H"
S-8213AAL-I6T1U
4.300 V
−0.40
V
8.0 s
CMOS output
Active "H"
S-8213AAM-I6T1U
4.350 V
−0.40
V
8.0 s
CMOS output
Active "H"
S-8213AAN-I6T1U
4.400 V
−0.40
V
8.0 s
CMOS output
Active "H"
S-8213AAO-I6T1U
4.450 V
−0.40
V
8.0 s
CMOS output
Active "H"
S-8213AAP-I6T1U
4.500 V
−0.40
V
8.0 s
CMOS output
Active "H"
S-8213AAQ-I6T1U
4.150 V
−0.05
V
2.0 s
CMOS output
Active "L"
S-8213AAR-I6T1U
4.250 V
−0.05
V
2.0 s
CMOS output
Active "L"
S-8213AAS-I6T1U
4.150 V
−0.05
V
2.0 s
Nch open-drain output Active "H"
S-8213AAT-I6T1U
4.250 V
−0.05
V
2.0 s
Nch open-drain output Active "H"
Remark
Please contact our sales department for the products with detection voltage value other than those specified above.
4
Rev.1.4
_00
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK (SECONDARY PROTECTION)
S-8213 Series
Pin Configurations
1. SOT-23-6
Top view
6 5 4
Table 3
Pin No.
1
2
Symbol
VSS
VC3
VC2
VC1
VDD
CO
Description
Input pin for negative power supply,
connection pin for negative voltage of battery 3
Connection pin for negative voltage of battery 2,
connection pin for positive voltage of battery 3
Connection pin for negative voltage of battery 1,
connection pin for positive voltage of battery 2
Connection pin for positive voltage of battery 1
Input pin for positive power supply
Connection pin of charge control FET gate
1 2 3
3
Figure 3
4
5
6
2. SNT-6A
Top view
1
2
3
6
5
4
Table 4
Pin No. Symbol
1
CO
2
VDD
3
VC1
4
5
6
VC2
VC3
VSS
Description
Connection pin of charge control FET gate
Input pin for positive power supply
Connection pin for positive voltage of battery 1
Connection pin for negative voltage of battery 1,
connection pin for positive voltage of battery 2
Connection pin for negative voltage of battery 2,
connection pin for positive voltage of battery 3
Input pin for negative power supply,
connection pin for negative voltage of battery 3
Figure 4
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
