TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
SESD Series Enhanced ESD Discrete TVS
Description
RoHS
Pb
GREEN ELV
The SESD Series Enhanced ESD Discrete TVS provides
ultra low capacitance unidirectional and bidirectional
ESD protection for the world’s most challenging high
speed serial interfaces. Ultra low capacitance helps
ensure excellent signal integrity on the most challenging
consumer electronics interfaces, such as USB 3.1, HDMI
2.0, DisplayPort, Thunderbolt, and V-by-One
®
. Providing
in excess of 22kV contact ESD protection (IEC61000-4-2)
while maintaining extremely low leakage and dynamic
resistance, offered in the industry’s most popular footprints
(0402 and 0201), the SESD series sets higher standards for
signal integrity and usability.
Pinout
Features
• 0.15pF TYP bidirectional
0201DFN
0402 DFN
• 0.30pF TYP unidirectional
• ESD, IEC61000-4-2,
±22kV contact, ±22kV air
• Low clamping voltage
of 14V @ I
PP
=2.5A
(Bidirectional) (t
P
=8/20μs)
• Low profile 0201 and
0402 DFN packages
• Facilitates excellent signal
integrity
• ELV Compliant
• RoHS Compliant and
Lead-free
1
1
2
Bottom View
2
Applications
• Ultra-high speed data
lines
• Consumer, mobile and
portable electronics
• Tablet PC and external
storage with high speed
interfaces
• Applications requiring
high ESD performance in
small packages
Functional Block Diagram
1
• USB 3.1, 3.0, 2.0
• HDMI 2.0, 1.4a, 1.3
• Thunderbolt
• DisplayPort
(TM)
• V-by-One
®
• LVDS interfaces
1
2
2
Additional Information
Unidirectional
Bidirectional
Datasheet
Resources
Samples
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/11/17
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Absolute Maximum Ratings
Symbol
I
PP
T
OP
T
STOR
Parameter
Peak Current (t
p
=8/20μs)
Operating Temperature
Storage Temperature
Value
2.5
-55 to 125
-55 to 150
Units
A
°C
°C
Thermal Information
Parameter
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature
(Soldering 20-40s)
Rating
-55 to 150
150
260
Units
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Uidirectional Electrical Characteristics -
(T
OP
=25
°
C)
Parameter
Input Capacitance
Breakdown Voltage
Reverse Working Voltage
Reverse Leakage Current
Clamping Voltage
ESD Withstand Voltage
I
L
@ V
RWM
=5.0V
V
CL
@ I
PP
=2.5A
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
±22
±22
25
13.0
Test Conditions
@ V
R
= 0V, f = 3GHz
V
BR
@ I
T
=1mA
Min
Typ
0.30
8.80
7
.0
Max
Units
pF
V
V
nA
V
kV
Bidirectional Electrical Characteristics -
(T
OP
=25
°
C)
Parameter
Input Capacitance
Breakdown Voltage
Reverse Working Voltage
Reverse Leakage Current
Clamping Voltage
ESD Withstand Voltage
I
L
@ V
RWM
=5.0V
V
CL
@ I
PP
=2.5A
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
±22
±22
25
14.0
Test Conditions
@ V
R
= 0V, f = 3GHz
V
BR
@ I
T
=1mA
Min
Typ
0.15
Max
Units
pF
V
7
.0
V
nA
V
kV
9.6
Insertion Loss Diagram - Unidirectional
0
-5.0
Insertion Loss Diagram - Bidirectional
0
-5.0
S21 Insertion Loss (dB)
-10.0
S21 Insertion Loss (dB)
1.E+07
1.E+08
1.E+09
1.E+10
-10.0
-15.0
-15.0
-20.0
-25.0
-20.0
-25.0
-30.0
-30.0
1.E+06
Frequency (Hz)
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
Frequency (Hz)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/11/17
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Device IV Curve - Unidirectional
1.0
0.8
0.6
0.4
0.2
Device IV Curve - Bidirectional
1.0
0.8
0.6
0.4
0.2
Current (mA)
Current (mA)
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-2
-1
0
1
2
3
4
5
6
7
8
9
10
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-8
-6
-4
-2
0
2
4
6
8
10
Voltage (V)
Voltage (V)
USB3.0 Eye Diagram
5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern
Without SESD Device
With SESD Device
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus) Temp (T
L
)
to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Temperature (t
L
)
Pb – Free assembly
150°C
Temperature
T
P
T
L
T
S(max)
Preheat
Ramp-up
t
P
Critical Zone
T
L
to T
P
200°C
60 – 180 secs
3°C/second max
3°C/second max
217°C
60 – 150 seconds
260
+0/-5
t
L
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
°C
Time
20 – 40 seconds
6°C/second max
8 minutes Max.
260°C
Product Characteristics of 0402 DFN Package
Lead Plating
Lead Material
Lead Coplanarity
Substrate material
Body Material
Pre-Plated Frame
Copper Alloy
0.0004 inches (0.102mm)
Silicon
V-0 per UL 94 Molded Epoxy
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/11/17
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Package Dimensions — 0201 DFN
A
3
Symbol
A
Millimeters
Min
0.28
0
0.25
0.55
0.11
0.20
0.13
0.14
Typ
0.30
-
0.102 ref.
0.30
0.60
0.17
0.25
0.18
0.19
0.356 BSC
0.32
0.24
0.62
0.14
0.35
0.65
0.22
0.30
0.23
0.24
0.010
0.022
0.004
0.008
0.005
0.006
Max
0.32
0.05
Min
0.011
0
Inches
Typ
0.012
-
0.004 ref.
0.012
0.024
0.007
0.010
0.008
0.007
0.014 BSC
0.013
0.009
0.024
0.006
0.014
0.026
0.009
0.012
0.009
0.009
Max
0.013
0.002
END VIEW
D
2
b
A1
A3
L
1
K
e
L
2
1
PIN 1 ID
C0.05
D
E
K
b
L1
L2
e
E
SIDE VIEW 1
TOP VIEW
SIDE VIEW 2
BOTTOM VIEW
A
A
1
M
N
O
P
END VIEW
M
P
O
N
Package Dimensions — 0402 DFN
A
3
Symbol
A
b
L
e
Millimeters
Min
0.33
0
0.55
0.95
0.35
0.45
0.20
Typ
0.38
-
0.13 ref.
0.60
1.00
0.40
0.50
0.25
0.65 BSC
0.60
0.35
1.00
0.30
0.65
1.05
0.45
0.55
0.30
0.022
0.037
0.014
0.018
0.008
Max
0.43
0.05
Min
0.013
0
Inches
Typ
0.015
-
0.005 ref.
0.024
0.039
0.016
0.020
0.010
0.026 BSC
0.024
0.014
0.039
0.012
0.026
0.041
0.018
0.022
0.012
Max
0.017
0.002
END VIEW
D
A1
A3
D
E
K
PIN 1 ID
0.125 x 45°
E
K
b
L
e
M
N
SIDE VIEW1
TOP VIEW
SIDE VIEW2
BOTTOM VIEW
A
A
1
O
P
END VIEW
M
P
O
N
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/11/17
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Part Numbering System
SESD
xxxx
X 1
x
N
00xx
–
xxx
SESD product
Package
0201
0402
DFN Package
1: one channel
Breakdown Voltage
096: 9.6V (TYP)
088: 8.8V ((TYP)
Input Capacitance
0015: 0.15pF (TYP)
0030: 0.30pF (TYP)
No Common pin
Directional
U: Unidirectional
B: Bidirectional
Part Marking System
D
Unidirectional
D
D
D
Bidirectional
Ordering Information
Part Number
SESD0201X1UN-0030-088
SESD0201X1BN-0015-096
SESD0402X1UN-0030-088
SESD0402X1BN-0015-096
Package
0201 DFN
0201 DFN
0402 DFN
0402 DFN
Marking
I D
D
I D
D
Ordering Part Number
RF3917-000
RF3918-000
RF3920-000
RF3922-000
Minimum Order Quantity
75000
75000
50000
50000
Embossed Carrier Tape & Reel Specification — 0201 DFN
T
D0
Y
P2
P0
E1
Symbol
A0
B0
F
W
Millimeters
D1
B0
D0
D1
E1
K0
Section Y - Y
A0
Y
P
1
User Feeding Direction
F
K0
P0
P1
P2
Pin 1 Location
W
T
0.36+/-0.03
0.66+/-0.03
ø 1.50+ 0.10/-0
ø 0.20+/- 0.05
1.75+/-0.10
3.50+/-0.05
0.33+/-0.03
4.00+/-0.10
2.00+/-0.10
2.00+/-0.05
8.00+/-0.10
0.23+/-0.02
Embossed Carrier Tape & Reel Specification — 0402 DFN
T
D0
Y
P2
P0
E1
Symbol
A0
B0
Millimeters
0.70+/-0.05
1.15+/-0.05
ø 1.55 + 0.05
ø 0.40 +/- 0.05
1.75+/-0.10
3.50+/-0.05
0.47+/-0.05
4.00+/-0.10
2.00+/-0.10
2.00+/-0.05
8.00+/-0.10
0.20+/-0.05
D1
B0
F
W
D0
D1
E1
K0
Section Y - Y
A0
Y
P
1
User Feeding Direction
F
K0
P0
P1
P2
W
Pin 1 Location
T
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/11/17
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