DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxS2UT series
Double ESD protection diodes in
SOT23 package
Product data sheet
Supersedes data of 2003 Aug 20
2004 Apr 15
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
FEATURES
•
Uni-directional ESD protection of up to two lines
•
Max. peak pulse power: P
pp
= 330 W at t
p
= 8/20
µs
•
Low clamping voltage: V
(CL)R
= 20 V at I
pp
= 18 A
•
Ultra-low reverse leakage current: I
RM
< 700 nA
•
ESD protection > 23 kV
•
IEC 61000-4-2; level 4 (ESD)
•
IEC 61000-4-5 (surge); I
pp
= 18 A at t
p
= 8/20
µs.
APPLICATIONS
•
Computers and peripherals
•
Communication systems
•
Audio and video equipment
•
High speed data lines
•
Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
TYPE NUMBER
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
MARKING CODE
(1)
*U9
*U1
*U2
*U3
*U4
1
PESDxS2UT series
QUICK REFERENCE DATA
SYMBOL
V
RWM
C
d
PARAMETER
reverse stand-off
voltage
diode capacitance
V
R
= 0 V;
f = 1 MHz
number of
protected lines
PINNING
PIN
1
2
3
cathode 1
cathode 2
common anode
DESCRIPTION
VALUE
3.3, 5.2, 12, 15
and 24
UNIT
V
207, 152, 38, 32 pF
and 23
2
3
1
3
2
2
sym022
001aaa490
Fig.1 Simplified outline (SOT23) and symbol.
2004 Apr 15
2
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
P
pp
PARAMETER
peak pulse power
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
I
pp
peak pulse current
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
T
j
T
amb
T
stg
Notes
1. Non-repetitive current pulse 8/20µ
µs
exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
junction temperature
operating ambient temperature
storage temperature
8/20
µs
pulse; notes 1 and 2
CONDITIONS
8/20
µs
pulse; notes 1 and 2
−
DESCRIPTION
plastic surface mounted package; 3 leads
PESDxS2UT series
VERSION
SOT23
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−65
MAX.
330
260
180
160
160
18
15
5
5
3
150
+150
+150
UNIT
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
2004 Apr 15
3
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
ESD maximum ratings
SYMBOL
ESD
PARAMETER
electrostatic discharge
capability
CONDITIONS
PESDxS2UT series
VALUE
UNIT
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
HBM MIL-Std 883
PESDxS2UT series
10
kV
30
30
30
30
23
kV
kV
kV
kV
kV
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
ESD STANDARD
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
>4 kV
CONDITIONS
>15 kV (air); > 8 kV (contact)
001aaa191
handbook, halfpage
120
MLE218
I
pp
100 %
90 %
Ipp
(%)
100 % Ipp; 8
µs
80
e
−t
50 % Ipp; 20
µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
=
0.7 to 1 ns
30 ns
60 ns
t
Fig.2
8/20
µs
pulse waveform according to
IEC 61000-4-5.
Fig.3
ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
2004 Apr 15
4
NXP Semiconductors
Product data sheet
Double ESD protection diodes in SOT23
package
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
RWM
PARAMETER
reverse stand-off voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
I
RM
reverse leakage current
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
V
BR
breakdown voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
C
d
diode capacitance
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
V
(CL)R
clamping voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
notes 1 and 2
I
pp
= 1 A
I
pp
= 18 A
I
pp
= 1 A
I
pp
= 15 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 3 A
−
−
−
−
−
−
−
−
−
−
f = 1 MHz; V
R
= 0 V
−
−
−
−
−
V
RWM
= 3.3 V
V
RWM
= 5.2 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
Z
= 5 mA
5.2
6.4
14.7
17.6
26.5
−
−
−
−
−
−
−
−
−
−
CONDITIONS
MIN.
PESDxS2UT series
TYP.
−
−
−
−
−
0.7
0.15
<0.02
<0.02
<0.02
5.6
6.8
15.0
18.0
27.0
207
152
38
32
23
−
−
−
−
−
−
−
−
−
−
MAX.
3.3
5.2
12
15
24
2
1
1
1
1
6.0
7.2
15.3
18.4
27.5
300
200
75
70
50
7
20
9
20
19
35
23
40
36
70
UNIT
V
V
V
V
V
µA
µA
µA
µA
µA
V
V
V
V
V
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
2004 Apr 15
5
微控制器 MCU
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