SMD Transient Voltage Suppressor
TV06B5V0-G Thru. TV06B441-G
Working Peak Reverse voltage: 5.0 ~ 440Volts
Power Dissipation: 600 Watts
RoHS Device
Features
-Ideally for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Typical IR less than 1μA above 10V.
-Fast response time: typically less than 1nS for
uni-direction, less than 5nS for bi-directional,
form 0V to BV min.
0.191(4.85)
0.171(4.35)
0.012(0.30)
0.006(0.15)
0.087(2.20)
0.077(1.96)
0.155(3.94)
0.130(3.30)
SMB/DO-214AA
Mechanical Data
-Case: JEDEC DO-214AA molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026
-Polarity: Cathode band denoted.
0.096(2.44)
0.083(2.13)
0.060(1.52)
0.030(0.75)
0.216(5.50)
0.201(5.10)
0.008(0.20)
0.001(0.02)
Dimensions in inches and (millimeter)
-Weight: 0.093 gram approx.
Rating at 25
O
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics
Characteristics
Peak power dissipation on 10/1000μS
waveform (Note 1, Fig.1)
Peak pulse current on 10/1000μS waveform
(Note 1, Fig.3)
Steady state power dissipation at T
L
=75
(Note 2)
O
Symbol
P
PPM
Value
600
Units
W
I
PPM
See Next Table
A
C
P
M(AV)
5.0
W
Peak forward surge current, 8.3mS single half
sine-wave superimposed on rated load, uni-
directional only (Note 3)
Maximum instantaneous forward voltage at
35.0A for uni-directional only (Note 3, 4)
Maximum operation junction temperature
Storage temperature range
I
FSM
100
A
V
F
T
J
T
STG
3.5/5.0
150
-55 to +150
V
O
C
C
O
Note:
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25
O
C per Fig.1
2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.
3. V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
REV:C
QW-BTV02
Page 1
SMD Transient Voltage Suppressor
Electrical Characteristics (TV06B5V0-G Thru. TV06B441-G)
Part No.
TV06B181K(B)-G
TV06B181J(B)-G
TV06B191K(B)-G
TV06B191J(B)-G
TV06B201J(B)-G
TV06B221J(B)-G
TV06B251J(B)-G
TV06B301J(B)-G
TV06B351J(B)-G
TV06B401J(B)-G
TV06B441J(B)-G
Absolute Maximum Rating (T
A
=25°C)
V
RWM
V
BR
Min. V
BR
Max.
I
T
I
FSM
(V)
180.0
180.0
190.0
190.0
200.0
220.0
250.0
300.0
350.0
400.0
440.0
Electrical Characteristic (T
A
=25°C)
Max V
C
I
R
@V
RWM
Marking Code
(V)
322.2
291.0
340.1
307.0
324.0
356.0
405.0
486.0
567.0
648.0
713.0
(V)
200.16
200.00
211.28
211.00
224.00
246.00
279.00
335.00
391.00
447.00
492.00
(V)
244.80
220.00
258.00
232.00
247.00
272.00
309.00
371.00
432.00
494.00
543.00
(mA) (A)@8.3mS
1
1
1
1
1
1
1
1
1
1
1
100
100
100
100
100
100
100
100
100
100
100
I
PP
(A)
1.86
2.06
1.76
1.95
1.85
1.69
1.48
1.23
1.06
0.93
0.84
(uA)
5
5
5
5
5
5
5
5
5
5
5
UNI
PS
PT
PU
PV
PW
PX
PZ
QE
QG
QK
QM
BI
ES
ET
EU
EV
EW
EX
EZ
FE
FG
FK
FM
Note:
1) Suffix K denotes 10% tolerance devices, suffix J denotes 5% tolerance devices.
2) Suffix B after part number to specify bi-directional devices.
3) For Bi-Directional devices having V
R
of 10 volts and under, the I
R
limit is double.
REV:C
QW-BTV02
Page 4
SMD Transient Voltage Suppressor
Rating and Characteristics Curves (TV06B5V0-G Thru. TV06B441-G)
Fig.1 Pulse Derating Curve
140
100
Fig.2 Maximum Non-Repetitive
Surge Current
8.3mS single half
sine-wave (JEDEC
method)
T
J
=T
J
Max.
Peak Pulse Derating in Percentage of Peak
Power or Current, (%)
120
100
80
60
I
FSM
, Peak Forward Surge Current (A)
175
Mounted on 5mm×5mm
copper pads
80
60
40
40
20
0
0
25
50
75
100
125
150
20
0
1
10
100
T
A
, Ambient Temperature (
O
C)
Number of Cycle at 60Hz
Fig.3 Steady State Power Derating Curve
5.0
100
Fig.4 Peak Pulse Power Rating Curve
Steady State Power Dissipation, ( W )
4.0
P
PPM
, Peak Power (KW)
10
3.0
2.0
1
1.0
0
0
25
50
75
100
125
150
175
200
0.1
0.1
1
10
100
1000
10000
Lead Temperature , (
O
C)
t
d
, Pulse Width (μS)
Fig.5 Pulse Waveform
125
tr=10μS
Pulse width (td) is defined as
the point where the peak
current decay to 50% of Ipp
Fig.6 Typical Junction Capacitance
10000
Bi-directional
@zero bias
I
PPM
, Peak Pulse Current (%)
C
J
, Junction Capacitance (pF)
100
Peak value, I
PPM
1000
Uni-directional
@zero bias
75
Half value, I
PP
/2
Uni-directional
@V
RWM
100
50
10/1000μS waveform
as defined by R.E.A.
10
T
J
=25 C
f=1.0MHz
O
25
td
Bi-directional
@V
RWM
0
0
1
2
3
4
1
1
10
100
1000
t, Time (mS)
VBR, Breakdown Voltage (V)
REV:C
QW-BTV02
Page 5
GD32 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
