®
LCP1511D
PROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR SLIC PROTECTION
Application Specific Discretes
A.S.D.™
FEATURES
n
n
n
n
n
n
DUAL PROGRAMMABLE TRANSIENT SUP-
PRESSOR.
WIDE NEGATIVE FIRING VOLTAGE RANGE :
V
MGL
= -80V max.
LOW DYNAMIC SWITCHING VOLTAGES :
V
FP
and V
DGL
.
LOW GATE TRIGGERING CURRENT :
I
GT
= 5mA max.
PEAK PULSE CURRENT :
I
PP
= 30A for 10/1000µs surge.
HOLDING CURRENT :
I
H
= 150mA.
DESCRIPTION
This device has been especially designed to pro-
tect subscriber line card interfaces (SLIC) against
transient overvoltages.
Positive overloads are clipped with 2 diodes. Neg-
ative surges are suppressed by 2 thyristors, their
breakdown voltage being referenced to
-V
BAT
through the gate.
This component presents a very low gate
trigge-ring current (I
GT
) in order to reduce the cur-
rent consumption on printed circuit board during
the firing phase.
A particular attention has been given to the internal
wire bonding. The “4-point” configuration ensures
reliable protection, eliminating the overvoltage in-
troduced by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transients.
SO-8
SCHEMATIC DIAGRAM
COMPLIES WITH THE FOLLOWING STANDARDS
CCITT K20 :
VDE 0433 :
O
VDE 0878 :
I3124 :
FCC part 68 :
so
b
te
le
10/700µs
5/310µs
10/700µs
5/310µs
1.2/50µs
1/20µs
0.5/700µs
0.2/310µs
2/10µs
2/10µs
ro
P
uc
d
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
TIP 1
8 TIP
7 GND
6 GND
5 RING
GATE 2
NC 3
RING 4
1kV
25A
2kV
38A (*)
1.5kV
40A
1kV
25A
2.5kV
170A (*)
2.5kV
170A (*)
TM: ASD is trademarks of STMicroelectronics.
BELLCORE
TR-NWT-001089 :
2/10µs
2/10µs
(*) with series resistors or PTC.
October 2003 - Ed: 4
1/7
LCP1511D
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C)
Symbol
I
PP
Peak pulse current
(see note 1)
Non repetitive surge peak on-state current
(F = 50Hz)
Maximum gate current (half sine wave tp = 10ms)
Maximum voltage LINE / GROUND
Maximum voltage GATE / LINE
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s
Parameter
10/1000µs
5/310µs
2/10µs
t
p
= 10ms
t = 1s
Value
30
38
170
8
3.5
2
-100
-80
- 55 to + 150
150
260
Unit
A
I
TSM
I
GSM
V
MLG
V
MGL
T
stg
T
j
T
L
A
A
V
°C
°C
Note 1 :
Pulse waveform :
10/1000µs
tr=10µs
5/310µs
tr=5µs
2/10µs
tr=2µs
% I
PP
tp=1000µs
tp=310µs
tp=10µs
100
50
0
THERMAL RESISTANCE
Symbol
R
th (j-a)
Junction to ambient
Parameter
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
Symbol
I
GT
I
H
I
RM
I
RG
V
F
Gate triggering current
Holding current
Reverse leakage current LINE/GND
Reverse leakage current GATE/LINE
V
GATE
V
RM
F
I
RM
V
b
O
V
RM
V
GT
V
FP
so
te
le
ro
P
Parameter
uc
d
s)
t(
so
b
-O
P
te
le
t
r
t
p
od
r
170
s)
t(
uc
t
Value
Unit
°C/W
I
F
I
Reverse voltage LINE/GND
Forward drop voltage LINE/GND
Gate triggering voltage
Peak forward voltage LINE/GND
Dynamic switching voltage GATE/LINE
GATE/GND voltage
LINE/GND voltage
Off-state capacitance LINE/GND
V
LG
I
H
V
DGL
V
GATE
V
LG
C
2/7
I
PP
LCP1511D
1 - PARAMETERS RELATED TO THE DIODE LINE/GND
(T
amb
= 25 °C)
Symbol
V
F
V
FP
I
F
=5A
10/700µs
1.2/50µs
2/10µs
Test conditions
t
p
=500µs
1.5kV
1.5kV
2.5kV
R
p
=10Ω
R
p
=10Ω
R
p
=62Ω
(see note 1)
Maximum
3
5
7
12
Unit
V
V
Note 1 :
See test circuit 2 for V
FP
; R
p
is the protection resistor located on the line card.
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR
(T
amb
= 25°C)
Sym-
bol
I
GT
I
H
V
GT
I
RG
V
DGL
V
GND/LINE
= -48V
V
GATE
=-48V (see note 2)
at I
GT
T
c
=25°C
T
c
=70°C
V
RG
=-75V
V
RG
=-75V
I
PP
=30A
I
PP
=30A
I
PP
=38A
Test conditions
Min.
0.2
150
Max.
5
Unit
mA
mA
V
µA
2.5
VGATE= -48V (see note 3)
10/700µs 1.5kV
Rp=10Ω
1.2/50µs 1.5kV
Rp=10Ω
2/10µs
2.5kV
Rp=62Ω
See the functional holding current (I
H
) test circuit 2.
Note 2 :
3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR
(T
amb
= 25 °C)
Sym-
bol
I
RM
T
c
=25°C
T
c
=70°C
APPLICATION NOTE
O
so
b
te
le
IN
ro
P
V
GATE/LINE
= -1V
V
GATE/LINE
= -1V
uc
d
Test conditions
V
RM
=-75V
V
RM
=-75V
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
5
50
10
20
25
V
Maximum
5
50
Unit
µA
TIP
1
OUT
8
TIP
GATE
2
7
GND
In order to take advantage of the “4 point” structure
of the LCP, the TIP and RING lines go across the
device. In such case, the device will eliminate the
overvoltages generated by the parasitic induc-
tances of the wiring (Ldi/dt), especially for very fast
transients.
NC
3
6
RING
4
IN
OUT
5
RING
3/7
LCP1511D
FUNCTIONAL HOLDING CURRENT (I
H
) TEST CIRCUIT 1 : GO-NO GO TEST
R
P
D .T
.U .
V
BAT
=
-
48V
Surge
generator
This is a GO-NO GO test which allows to confirm the holding current (I
H
) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I
H
value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : I
PP
= 10A, 10/1000µs.
- The D.U.T. will come back to the off-state within a duration of 50ms max.
TEST CIRCUIT 2 FOR V
FP
AND V
DGL
PARAMETERS
(V is defined in unload condition)
P
L
V
P
C
1
O
so
b
t
r
10
1.2
2
te
le
t
p
700
50
10
ro
P
V
p
(V)
uc
d
s)
t(
so
b
-O
R
2
R
1
P
te
le
C
2
od
r
s)
t(
uc
TIP
RING
R
4
R
3
G ND
Pulse (µs)
C
1
(µF)
20
1
10
C
2
(nF)
200
33
0
L
(µH)
0
0
1.1
R
1
(Ω)
50
76
1.3
R
2
(Ω)
15
13
0
R
3
(Ω)
25
25
3
R
4
(Ω)
25
25
3
I
PP
(A)
30
30
38
R
p
(Ω)
10
10
62
1500
1500
2500
4/7
LCP1511D
FUNCTIONAL DESCRIPTION
LINE A PROTECTION :
– For positive surges versus GND, the diode D1
will conduct.
– For negative surges versus GND, the protection
device P1 will trigger at a voltage fixed by the
-V
BAT
reference.
LINE B PROTECTION :
– For surges on line B, the operating mode is the
same, D2 or P2 is activated.
It is recommended to add a capacitor (C=220nF)
close to the gate of the LCP, in order to speed up
the triggering.
LINE A
D
1
P
1
TIP
- V
BAT
P
2
D
2
LINE B
RING
C
Surge peak current versus overload duration.
I
TSM
(A)
10
9
8
7
6
5
4
3
2
1
0
1E-2
1E-1
1E+0
F=50Hz
Tj initial=25°C
t(s)
1E+1
O
so
b
te
le
ro
P
uc
d
1E+2
s)
t(
so
b
-O
P
te
le
od
r
s)
t(
uc
1E+3
5/7
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