EMIF06-HMC01F2
6-line IPAD™, EMI filter including ESD protection
Datasheet
-
production data
•
Very thin package: 0.65 mm
•
High efficiency in ESD suppression
•
High reliability offered by monolithic integration
•
High reducing of parasitic elements through
integration and wafer level packaging
Complies with the following standards
Lead-free Flip-Chip package
(16 bumps)
•
IEC 61000-4-2 level 4 on external pins
– 15 kV (air discharge)
– 8 kV (contact discharge)
•
MIL STD 883E - Method 3015-6 Class 3
Figure 1. Pin configuration (ball side) and
Basic cell configuration
Application
4
3
2
1
O
bs
Vmmc
MMCclk
MMCcmd
MMCdat0
MMCdat1
MMCdat2
MMCdat3
et
l
o
R10
R11
R12
R13
R14
ro
P
e
R2
R3
R4
R5
R6
R7
uc
d
B
C
D
A
s)
t(
O
Description
-
•
High Speed MultiMediaCard™
so
b
te
le
ro
P
uc
d
s)
t(
Vmmc
clk
cmd
dat0
dat1
dat2
dat3
The EMIF06-HMC01F2 is a highly integrated
array designed to suppress EMI / RFI noise for
High Speed MultiMediaCard™ port filtering.
The EMIF06-HMC01F2 Flip-Chip packaging
means the package size is equal to the die size.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15 kV.
Table 1. Ball configuration
A1
A2
A3
cmd
clk
Vmmc/Vdd
MMCclk
dat1
dat0
gnd
MMCcmd
C1
C2
C3
C4
D1
D2
D3
D4
dat2
gnd
MMCdat1
MMCdat0
dat3
gnd
MMCdat3
MMCdat2
GND
A4
B1
B2
B3
B4
Features
•
6 lines low-pass-filter
•
High efficiency in EMI filtering
•
Very low PCB space consuming: < 4.4 mm
2
•
Lead-free package
March 2014
This is information on a product in full production.
TM:
IPAD is a trademark of STMicroelectronics.
DocID11168 Rev 3
1/8
www.st.com
Electrical characteristics
EMIF06-HMC01F2
1
Electrical characteristics
Table 2. Absolute maximum ratings (T
amb
= 25 °C)
Symbol
Parameter and test conditions
Internal pins (A4, B4, C3, C4, D3, D4):
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
External pins (A1, A2, A3, B1, B2, C1, D1):
ESD discharge IEC61000-4-2, air discharge
ESD discharge IEC61000-4-2, contact discharge
Maximum junction temperature
Operating temperature range
Storage temperature range
Value
Unit
V
PP
2
2
15
8
125
kV
T
j
T
op
T
stg
- 40 to + 85
Figure 2. Electrical characteristics (definitions)
Symbol
V
BR
V
RM
I
RM
C
line
Parameter
Breakdown voltage
Stand-off voltage
Leakage current @ V
RM
Line capacitance
=
=
=
=
bs
O
et
l
o
ro
P
e
V
BR
I
RM
C
line
uc
d
s)
t(
O
-
so
b
te
le
r
P
d
o
I
- 55 to + 150
uc
s)
t(
°C
°C
°C
V
BR
V
RM
I
RM
I
RM
I
R
V
RM
V
BR
V
Table 3. Electrical characteristics (T
amb
= 25 °C)
Test conditions
Tolerance
Min.
14
0.1
20
±20 %
±30 %
±30 %
50
75
7
Typ.
Max.
Unit
V
µA
pF
Ω
kΩ
kΩ
Symbol
I
R
= 1 mA
V
RM
= 3 V
@0V
R
2,
R
3,
R
4,
I = 50 mA
R
5,
R
6,
R
7
R
10,
R
11,
I = 50 µA
R
12,
R
13
R
14
I = 200 µA
2/8
DocID11168 Rev 3
EMIF06-HMC01F2
Electrical characteristics
Figure 3. S21 (dB) attenuation measurement
0.00
dB
- 10.00
Figure 4. Analog crosstalk measurements
0.00
dB
- 10.00
- 20.00
- 20.00
- 30.00
- 40.00
- 30.00
- 50.00
- 60.00
- 40.00
- 70.00
- 50.00
100.0k
1.0M
10.0M
f/Hz
100.0M
1.0G
- 80.00
100.0k
1.0M
10.0M
f/Hz
100.0M
1.0G
Figure 5. ESD response to IEC61000-4-2
Figure 6. ESD response to IEC61000-4-2
(+15 kV air discharge) on one input V(in) and on (-15 kV air discharge) on one input V(in) and on
one output (Vout)
one output (Vout)
Input
10V/d
Input
10V/d
Output
10V/d
Output
200ns/d
O
bs
et
l
o
ro
P
e
Figure 7. Junction capacitance versus reverse voltage applied (typical values)
C
LINE
(pF)
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
Vosc=30mV
F=1MHz
Ta=25 °C
uc
d
s)
t(
O
-
so
b
10V/d
te
le
ro
P
uc
d
s)
t(
200ns/d
V
LINE
(V)
DocID11168 Rev 3
3/8
8
Aplac model
EMIF06-HMC01F2
2
Aplac model
Figure 8. Aplac model device structure
R10
R11
Lbump Rbump
Vmmc_Vdd
Cbump Rsub
A3
Lbump Rbump
MMCclk
Cbump Rsub
A4
Lbump
Rbump
MMCcmd
Cbump Rsub
B4
Lbump
Rbump
MMCdat0
Cbump Rsub
C4
Lbump Rbump
Cbump Rsub
C3
Lbump Rbump
MMCdat2
Cbump Rsub
D4
Lbump Rbump
MMCdat3
Cbump Rsub
D3
bulk
bulk
bulk
Lbump
bulk
MMCdat1
MODEL = demif06_gnd
bulk
MMCdat2
R7
MMCdat3
MODEL = demif06
dat3
MODEL = demif06
bulk
bulk
MMCdat0
R5
MMCdat1
R6
dat2
bulk
dat1
MMCclk
R3
MMCcmd
R4
dat0
cmd
cmd
bulk
Rbump Lbump
Rsub
Cbump
bulk
Vmmc_Vdd
R14
R2
clk
clk
Rbump Lbump
Rsub
Cbump
A2
R12
R13
dat0
Rbump
Variables
b
O
et
l
so
r
P
e
R3 50
R4 50
R5 50
R6 50
R7 50
R2 50
od
uc
)-
(s
t
b
O
Cgnd
so
Lgnd
Rgnd
te
le
r
P
d
o
bulk
dat1
uc
Rbump Lbump
Rsub Cbump
s)
t(
A1
B2
Rbump Lbump
Rsub Cbump
B1
Rbump Lbump
Rsub Cbump
bulk
dat2
bulk
dat3
Rbump Lbump
Rsub Cbump
bulk
C1
D1
Figure 9. Aplac model parameters
Variables
Cz 11pF
Cz_gnd 45pF
RS_gnd 480m
Ls 950pH
Rs 150m
Rbump 100m
Lbump 50pH
Cbump 0.15pF
Lgnd 50pH
Rgnd 100m
Cgnd 0.15pF
demif06_gnd
BV=14
IBV=1m
CJO=Cz_gnd
M=0.31
RS=RS_gnd
VJ=0.6
TT=100n
demif06
BV=14
IBV=1m
CJO=Cz
M=0.31
RS=1
VJ=0.6
TT=100n
R10 75k
R11 75k
R12 75k
R13 75k
R14 7k
Rsub 100m
4/8
DocID11168 Rev 3
EMIF06-HMC01F2
Ordering information scheme
3
Ordering information scheme
Figure 10. Ordering information scheme
EMIF
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = flip chip
x = 2: lead free pitch = 500 µm, bump = 315 µm
yy
-
xxx zz
Fx
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
bs
O
195 µm
DocID11168 Rev 3
195 µm
1.89 mm ± 50 µm
1.89 mm ± 50 µm
et
l
o
500 µm ± 10
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Figure 11. Package dimensions
315 µm ± 50
650 µm ± 65
500 µm ± 10
5/8
8
测试/测量
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