SMC30J
3000 W Transil™
Datasheet
-
production data
Description
A
The SMC30J Transil series has been designed to
protect sensitive equipment against surges below
3000 W (10/1000 µs) and against electro-static
discharges according to IEC 61000-4-2, and MIL
STD 883, method 3015.
Bidirectional
K
Unidirectional
SMC
(JEDEC DO-214AB)
The Planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. SMC30J are packaged in SMC (SMC
footprint in accordance with IPC 7531 standard).
Features
•
Peak pulse power:
– 3000 W (10/1000
μs)
•
Stand off voltage range: from 5 V to 48 V
•
Unidirectional and bidirectional types
•
Low leakage current: 0.2
μA
•
Operating T
j max
: 175 °C
•
JEDEC registered package outline
Complies with the following standards
•
IEC 61000-4-2 exceeds level 4
– 30 kV (air discharge)
– 30 kV (contact discharge)
•
MIL STD 883G, method 3015-7 Class 3B
– 25 kV HBM (human body model)
•
Resin meets UL 94, V0
•
MIL-STD-750, method 2026 solderability
•
EIA STD RS-481 and IEC 60286-3 packing
•
IPC 7531 footprint
TM:
Transil is a trademark of STMicroelectroniocs
July 2015
This is information on a product in full production.
DocID022064 Rev 3
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www.st.com
Characteristics
SMC30J
1
Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol
P
PP
T
stg
T
j
T
L
Peak pulse power dissipation
Storage temperature range
Parameter
T
j
initial = T
amb
Value
3000
-65 to +175
-55 to +175
260
Unit
W
°C
°C
°C
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
Table 2. Thermal resistances
Symbol
R
th(j-l)
Junction to leads
Parameter
Value
15
Unit
° C/W
Figure 1. Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2. Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
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DocID022064 Rev 3
SMC30J
Table 3. Electrical characteristics - parameter values (T
amb
= 25 °C)
V
BR
@I
R(1)
I
RM
max@V
RM
Order code
µA
SMC30J5.0A/CA
SMC30J6.0A/CA
SMC30J6.5A/CA
SMC30J8.5A/CA
SMC30J10A/CA
SMC30J12A/CA
SMC30J13A/CA
SMC30J15A/CA
SMC30J16A/CA
SMC30J18A/CA
SMC30J20A/CA
SMC30J22A/CA
SMC30J24A/CA
SMC30J26A/CA
SMC30J28A/CA
SMC30J30A/CA
SMC30J33A/CA
SMC30J36A/CA
SMC30J40A/CA
SMC30J48A/CA
1. Pulse test: t
p
< 50 ms
Characteristics
V
CL
@I
PP
10/1000 µs
max
mA
V
9.2
10.3
11.2
14.4
17
19.9
21.5
24.4
26
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
76.6
A
(4)
327
291
268
208
176
151
140
123
115
103
93
85
77
71
66
62
56
48.41
43.5
38.0
R
D (2)
10/1000 µs
αT
(3)
max
min
V
5
6
6.5
8.5
10
12
13
15
16
18
20
22
24
26
28
30
33
36
40
48
6.4
6.7
7.2
9.4
11.1
13.3
14.4
16.7
17.8
20
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
53.2
V
typ
Ω
0.008
0.011
0.014
0.022
0.030
0.039
0.045
0.055
0.063
0.079
0.097
0.115
0.140
0.165
0.192
0.215
0.261
0.331
0.409
0.542
10-4/ °C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10.0
10.0
10.1
10.3
500
500
250
10
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
6.74
7.05
7.58
9.9
11.7
14
15.2
17.6
18.7
21.1
23.4
25.7
28.1
30.4
32.7
35.1
38.6
42.1
46.7
56.0
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2. To calculate maximum clamping voltage at other surge level,use the following formula: V
CLmax
= V
CL
- R
D
x (I
PP
- I
PPappli
)
where I
PPappli
is the surge current in the application
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
– 25))
V
CL
@ T
J
= V
CL
@ 25°C x (1 +
αT
x (T
J
– 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
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10
Characteristics
SMC30J
Figure 3. Peak pulse power dissipation versus Figure 4. Peak pulse power versus exponential
initial junction temperature
pulse duration
(T
j
initial = 25 °C)
4000
3500
3000
2500
2000
1500
1000
500
0
0
25
50
75
100
125
150
VBR ≥ 36 V
VBR < 36 V
100.0
P
PP
(W)
10/1000 μs
1000.0
P
PP
(kW)
T
j
initial = 25 °C
10.0
1.0
T
j
(°C)
175
200
0.1
1.E-03
t
P
(
ms
)
1.E-02
1.E-01
1.E+00
1.E+01
Figure 5. Clamping voltage versus peak pulse
current (exponential waveform, maximum
values)
I
PP
(A)
1000.0
T
j
i nitial = 25 °C
10/1000 µs
8/20 µs
10/1000 µs
Figure 6. Junction capacitance versus reverse
applied voltage for unidirectional types
C(nF)
F = 1 MHz
V
OSC
= 30 mV
T
j
= 25 °C
10.0
SMC30J5.0A
RMS
100.0
100.0
10.0
1.0
SMC30J15A
SMC30J33A
SMC30J48A
SMC30J5.0A/CA
SMC30J33A/CA
SMC30J48A/CA
SMC30J15A/CA
SMC30J22A/CA
1.0
0.1
1
10
VCL(V)
100
0.1
1
10
V
R
(V)
100
Figure 7. Junction capacitance versus reverse
applied voltage for bidirectional types
100. 0
Figure 8. Peak forward voltage drop versus
peak forward current
100.0
C(nF)
F = 1 MHz
V
OSC
= 30 mV
T
j
= 25 °C
I
FM
(A)
RMS
10. 0
SMC30J5.0CA
10.0
T
j
= 150 °C
T
j
= 25 °C
SMC30J15CA
1. 0
SMC30J33CA
SMC30J48CA
0. 1
1
10
1.0
T
j
= 175 °C
V
R
(V)
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
FM
(V)
1.6
1.8
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DocID022064 Rev 3
SMC30J
Characteristics
Figure 9. Relative variation of thermal
impedance versus pulse duration
Figure 10. Thermal resistance junction to
ambient versus copper surface under each lead
Figure 11. Leakage current versus junction temperature (typical values)
100000
IR(nA)
V
R
=V
RM
V
RM
< 10V
10000
1000
100
V
RM
≥ 10V
TJ (°C)
10
1
25
50
75
100
125
150
175
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测试/测量
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