PESD5V0C1BSF
6 May 2015
Ultra low capacitance bidirectional ESD protection diode
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode,
part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962)
leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection
family is optimized for safeguarding very sensitive high-speed interfaces against ESD
pulses with a high level of robustness.
2. Features and benefits
•
•
•
•
Bidirectional ESD protection of one line
Extremely low diode capacitance C
d
= 0.2 pF
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
•
•
•
ultra high-speed datalines
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
C
d
V
RWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
T
amb
= 25 °C
Min
-
-
Typ
0.2
-
Max
0.25
5
Unit
pF
V
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NXP Semiconductors
PESD5V0C1BSF
Ultra low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1
K2
cathode (diode 1)
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
sym045
2
Transparent
top view
DSN0603-2 (SOD962-2)
6. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0C1BSF
DSN0603-2
Description
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
Version
SOD962-2
Type number
7. Marking
Table 4.
Marking codes
Marking code
P
Type number
PESD5V0C1BSF
PESD5V0C1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
2 / 12
NXP Semiconductors
PESD5V0C1BSF
Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20 µs
[1]
Min
-
-
-40
-65
Max
9
150
125
150
Unit
A
°C
°C
°C
ESD maximum ratings
electrostatic discharge voltage
IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1]
[2]
120
I
PP
(%)
80
100 % I
PP
; 8 µs
[2]
[2]
-
-
20
20
kV
kV
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
001aaa630
001aaa631
I
PP
100 %
90 %
e
- t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0C1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
3 / 12
NXP Semiconductors
PESD5V0C1BSF
Ultra low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6.
Symbol
V
RWM
C
d
Characteristics
Parameter
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
f = 2.5 GHz; V
R
= 0 V; T
amb
= 25 °C
V
BR
V
CL
V
CL
breakdown voltage
clamping voltage
clamping voltage
I
R
= 1 mA; T
amb
= 25 °C
T
amb
= 25 °C; I
PPM
= 9 A; t
p
= 8/20 μs
T
amb
= 25 °C; I
PP
= 8 A; t
p
= TLP
T
amb
= 25 °C; I
PP
= 16 A; t
p
= TLP
R
dyn
I
RM
dynamic resistance
reverse leakage
current
[1]
[2]
[1]
[2]
[2]
[2]
Min
-
-
-
6
-
-
-
-
-
Typ
-
0.2
0.2
10
-
4.6
6.5
0.23
1
Max
5
0.25
-
-
5.5
-
-
-
50
Unit
V
pF
pF
V
V
V
V
Ω
nA
T
amb
= 25 °C; I
R
= 10 A
V
RWM
= 5 V; T
amb
= 25 °C
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
0.25
C
d
(pF)
0.20
aaa-016861
I
PPM
I
PP
-V
CL
-V
BR
-V
RWM
I
RM
I
R
-I
RM
-I
R
V
RWM
V
BR
V
CL
0.15
0.10
-
+
0.05
-I
PP
-I
PPM
006aab325
0.00
0
1
2
3
4
V
R
(V)
5
Fig. 3.
V-I characteristics for a bidirectional ESD
protection diode
f = 1 MHz; T
amb
= 25 °C
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
PESD5V0C1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
4 / 12
NXP Semiconductors
PESD5V0C1BSF
Ultra low capacitance bidirectional ESD protection diode
0.25
C
d
(pF)
0.20
aaa-016862
2
S
21
(dB)
-2
aaa-016863
0.15
0.10
-6
0.05
0.00
0
2
4
6
f (GHz)
8
-10
10
-2
10
-1
1
10
f (GHz)
10
2
Fig. 5.
Diode capacitance as a function of frequency;
typical values
16
aaa-016864
Fig. 6.
Insertion loss; typical values
0
aaa-016865
I
PP
(A)
12
R
dyn
= 0.23 Ω
I
PP
(A)
-4
8
-8
4
-12
R
dyn
= 0.23 Ω
0
0
5
10
15
V
CL
(V)
20
-16
-20
-15
-10
-5
V
CL
(V)
0
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 7.
Dynamic resistance with positive clamping
voltage
Fig. 8.
t
p
= 100 ns; Transmission Line Pulse (TLP)
Dynamic resistance with negative clamping
voltage
PESD5V0C1BSF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
6 May 2015
5 / 12
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