SMP30
Trisil™ for telecom equipment protection
Features
■
■
■
■
■
Bidirectional crowbar protection
Voltage range from 62 V to 270 V
Low capacitance from 10 pF
to 20 pF typ.@ 50 V
Low leakage current: I
R
= 2 µA max.
SMA
(JEDEC DO-214AC)
Holding current: I
H
= 150 mA min.
■
Repetitive peak pulse current:
I
PP
= 30 A (10/1000 µs)
Benefits
■
Trisils are not subject to ageing and provide a
fail safe mode in short circuit for a better
protection.
This device can be used to help equipment
meet various standards such as UL1950,
IEC950 / CSA C22.2, UL1459 and FCC part
68.
Trisils have UL94 V0 approved resin.
SMA package is JEDEC registered
(DO-214AC).
Trisils are UL497B approved (file: E136224).
Figure 1.
Device configuration
■
■
■
■
Applications
Telecommunication equipment such as:
■
■
Description
The SMP30 series has been designed to protect
telecommunication equipment against lightning
and transient induced by AC power lines. The
package / die size ratio has been optimized by
using the SMA package.
Analog and digital line cards (xDSL, T1/E1,
ISDN...).
Terminals (phone, fax, modem...) and central
office equipment.
TM:
Trisil is a trademark of STMicroelectronics.
July 2010
Doc ID 5603 Rev 7
1/9
www.st.com
9
Characteristics
SMP30
1
Table 1.
Characteristics
Compliant with the following standards
Peak surge
voltage
(V)
2500
1000
5000
1500
6000
1500
8000
15000
4000
2000
4000
2000
4000
4000
1500
800
1000
Waveform
voltage
2/10 µs
10/1000 µs
2/10 µs
2/10 µs
10/700 µs
1/60 ns
10/700 µs
1.2/50 µs
10/700 µs
1.2/50 µs
10/160 µs
10/560 µs
9/720 µs
Required peak
current (A)
500
100
500
100
150
37.5
Current
waveform
2/10 µs
10/1000 µs
2/10 µs
2/10 µs
5/310 µs
Minimum serial
resistor to
meet standard
(Ω)
20
24
40
0
110
0
0
0
60
10
18
0
60
18
26
15
0
STANDARD
GR-1089 Core
First level
GR-1089 Core
Second level
GR-1089 Core
Intra-building
ITU-T-K20/K21
ITU-T-K20
(IEC61000-4-2)
VDE0433
VDE0878
IEC61000-4-5
FCC Part 68, lightning
surge type A
FCC Part 68, lightning
surge type B
ESD contact discharge
ESD air discharge
100
50
100
50
100
100
200
100
25
5/310 µs
1/20 µs
5/310 µs
8/20 µs
10/160 µs
10/560 µs
5/320 µs
2/9
Doc ID 5603 Rev 7
SMP30
Table 2.
Symbol
Characteristics
Absolute ratings (T
amb
= 25 °C)
Parameter
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
8/20 µs
t = 0.2 s
t=1s
t=2s
t = 15 mn
t = 16.6 ms
t = 20 ms
Value
30
70
35
40
45
70
100
2.5
14
10.5
9
3
5.7
4.9
-55 to + 150
150
260
Unit
I
PP
Repetitive peak pulse current
A
I
FS
Fail-safe mode : maximum current
(1)
kA
I
TSM
Non repetitive surge peak on-state current (sinusoidal)
A
I²t
T
stg
T
j
T
L
I²t value for using
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s.
A²s
°C
°C
°C
1. In fail safe mode, the device acts as a short circuit.
Table 3.
Symbol
R
th(j-a)
R
th(j-l)
Thermal resistances
Parameter
Junction to ambient (with recommended footprint)
Junction to leads
Value
120
30
Unit
°C/W
°C/W
Table 4.
Symbol
V
RM
V
BR
V
BO
I
RM
I
PP
I
BO
I
H
V
R
I
R
C
Electrical characteristics - definitions (T
amb
= 25 °C)
Parameter
Stand-off voltage
Breakdown voltage
Breakover voltage
Leakage current
Peak pulse current
Breakover current
Holding current
Continuous reverse voltage
Leakage current at V
R
Capacitance
Doc ID 5603 Rev 7
3/9
Characteristics
Table 5.
Electrical characteristics - values (T
amb
= 25 °C)
I
RM
@ V
RM
Types
max.
µA
SMP30-62
SMP30-68
SMP30-100
SMP30-120
SMP30-130
2
SMP30-180
SMP30-200
SMP30-220
SMP30-240
SMP30-270
162
180
198
216
243
V
56
61
90
108
117
5
180
200
220
240
270
235
262
285
300
350
240
267
293
320
360
I
R (1)
@ V
R
max.
µA
V
62
68
100
120
130
Dynamic
V
BO
max.
V
85
93
135
160
173
Static
V
BO
@ I
BO
max.
V
82
90
133
160
173
800
150
12
12
10
10
10
max.
mA
I
H
min.
mA
C
(2)
typ.
pF
20
20
16
16
14
SMP30
C
(3)
typ.
pF
40
40
35
30
30
25
25
20
20
20
1. I
R
measured at V
R
guarantee V
BR
min
≥
V
R
2. V
R
= 50 V bias, V
RMS
= 1 V, F = 1 MHz
3. V
R
= 2 V bias, V
RMS
= 1 V, F = 1 MHz
Figure 2.
% I
10 0
Pulse waveform
Figure 3.
I
TSM
(A)
25
Non repetitive surge peak on-state
current versus overload duration
PP
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
20
F=50Hz
15
50
10
5
0
t
r
t
p
t
t(s)
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
4/9
Doc ID 5603 Rev 7
SMP30
Characteristics
Figure 4.
On-state voltage versus on-state
current (typical values)
Figure 5.
Relative variation of holding
current versus junction
temperature
I
T
(A)
50
I
H
[T
j
] / I
H
[T
j
=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
10
5
Tj=25°C
2
V
T
(V)
1
0
1
2
3
4
5
6
7
8
9
10
0.2
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
Figure 6.
Relative variation of breakover
voltage versus junction
temperature
Figure 7.
Relative variation of leakage
current versus reverse voltage
applied (typical values)
V
BO
[T
j
] / V
BO
[T
j
=25°C]
1.10
I
RM
[T
j
] / I
RM
[T
j
=25°C]
2000
1000
V
R
=V
RM
1.05
100
1.00
270 V
10
0.95
62 V
0.90
-40
T
j
(°C)
-20
0
20
40
60
80
100
T
j
(°C)
1
25
50
75
100
125
Figure 8.
Variation of thermal impedance
junction to ambient versus pulse
duration
Figure 9.
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
Z
th(j-a)
(°C/W)
1E+2
C[V
R
] / C[V
R
=50V]
2.5
2.0
1.5
1.0
Tj=25°C
F=1MHz
VRMS=1V
Printed circuit board FR4,
copper thickness = 35 µm,
recommended pad layout
1E+1
1E+0
0.5
t
p
(s)
1E-1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
V
R
(V)
0.0
1
2
5
10
20
50
100
300
Doc ID 5603 Rev 7
5/9
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