PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 04 — 26 January 2010
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra
small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect
up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
Unidirectional ESD protection of up to
two lines
Max. peak pulse power: P
PP
= 150 W
at t
p
= 8/20
μs
Low clamping voltage: V
CL
= 20 V
at I
PP
= 15 A
Low reverse leakage current: I
RM
< 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 15 A
at t
p
= 8/20
μs
1.3 Applications
Computers and peripherals
Audio and video equipment
Communication systems
High-speed data lines
Parallel ports
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse standoff voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
C
d
diode capacitance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
200
150
38
32
23
275
215
100
70
50
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode 1
cathode 2
common anode
3
3
Simplified outline
Graphic symbol
1
2
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
-
Description
plastic surface-mounted package; 3 leads
Version
SOT663
Type number
4. Marking
Table 4.
Marking codes
Marking code
E1
E2
E3
E4
E5
Type number
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESDXS2UQ_SER_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 26 January 2010
2 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
peak pulse power
peak pulse current
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
Conditions
t
p
= 8/20
μs
t
p
= 8/20
μs
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
−65
−65
Max
150
15
15
5
5
3
150
+150
+150
Unit
W
A
A
A
A
A
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured across either pins 1 and 3 or pins 2 and 3.
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge
voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
PESDxS2UQ series
[1]
[2]
Parameter
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
Max
Unit
-
-
-
-
-
MIL-STD-883
(human body model)
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
Device stressed with ten non-repetitive ESD pulses.
Measured across either pins 1 and 3 or pins 2 and 3.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESDXS2UQ_SER_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 26 January 2010
3 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff
voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
I
RM
reverse leakage current
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
V
BR
breakdown voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
V
RWM
= 3.3 V
V
RWM
= 5 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
5.2
6.4
14.7
17.6
26.5
5.6
6.8
15.0
18.0
27.0
6.0
7.2
15.3
18.4
27.5
V
V
V
V
V
-
-
-
-
-
0.55
50
<1
<1
<1
3
300
30
50
50
μA
nA
nA
nA
nA
-
-
-
-
-
-
-
-
-
-
3.3
5
12
15
24
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
PESDXS2UQ_SER_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 26 January 2010
4 of 13
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Table 8.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol
C
d
Parameter
diode capacitance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
V
CL
clamping voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
r
dif
differential resistance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
[1]
[2]
[1][2]
Conditions
f = 1 MHz; V
R
= 0 V
Min
-
-
-
-
-
Typ
200
150
38
32
23
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
275
215
100
70
50
8
20
9
20
19
35
23
40
36
70
40
15
15
225
300
Unit
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
I
PP
= 1 A
I
PP
= 15 A
I
PP
= 1 A
I
PP
= 15 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
I
R
= 5 mA
I
R
= 5 mA
I
R
= 5 mA
I
R
= 1 mA
I
R
= 0.5 mA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured across either pins 1 and 3 or pins 2 and 3.
PESDXS2UQ_SER_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 26 January 2010
5 of 13
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