Important notice
Dear Customer,
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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© Nexperia B.V. (year). All rights reserved.
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PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Rev. 01 — 17 January 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small
SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four
signal lines from the damage caused by ESD and other transients.
1.2 Features
I
I
I
I
ESD protection of up to four lines
Max. peak pulse power: P
PP
= 110 W
Low clamping voltage: V
CL
= 11 V
Ultra low leakage current: I
RM
= 4 nA
I
I
I
I
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 10 A
AEC-Q101 qualified
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3S4UF
PESD5V0S4UF
C
d
diode capacitance
PESD3V3S4UF
PESD5V0S4UF
f = 1 MHz; V
R
= 0 V
-
-
110
85
300
220
pF
pF
-
-
-
-
3.3
5.0
V
V
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
common anode
cathode (diode 4)
6
5
bottom view
4
1
2
3
1
2
3
006aaa156
Simplified outline
Symbol
6
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3S4UF
PESD5V0S4UF
XSON6
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1.45
×
0.5 mm
Version
SOT886
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
A3
A4
Type number
PESD3V3S4UF
PESD5V0S4UF
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
peak pulse power
peak pulse current
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Parameter
Conditions
Min
-
-
Max
110
10
Unit
W
A
PESD3V3S4UF_PESD5V0S4UF_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 17 January 2008
2 of 13
NXP Semiconductors
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[1][2]
Parameter
Conditions
Min
-
-
Max
30
10
Unit
kV
kV
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1. 8/20
µs
pulse waveform according to
IEC 61000-4-5
PESD3V3S4UF_PESD5V0S4UF_1
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 17 January 2008
3 of 13
NXP Semiconductors
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
RWM
reverse standoff voltage
PESD3V3S4UF
PESD5V0S4UF
I
R
reverse current
PESD3V3S4UF
PESD5V0S4UF
V
BR
breakdown voltage
PESD3V3S4UF
PESD5V0S4UF
C
d
diode capacitance
PESD3V3S4UF
PESD5V0S4UF
V
CL
clamping voltage
PESD3V3S4UF
PESD5V0S4UF
r
dif
differential resistance
PESD3V3S4UF
PESD5V0S4UF
[1]
[2]
[1][2]
Conditions
Min
Typ
Max
Unit
-
-
V
R
= 3.0 V
V
R
= 4.3 V
I
R
= 1 mA
5.32
6.46
f = 1 MHz; V
R
= 0 V
-
-
I
PP
= 1 A
I
PP
= 10 A
I
PP
= 1 A
I
PP
= 10 A
I
R
= 1 mA
-
-
-
-
-
-
-
-
-
-
100
4
5.6
6.8
110
85
-
-
-
-
-
-
3.3
5.0
1000
100
5.88
7.14
300
220
8
11
8
12
400
200
V
V
nA
nA
V
V
pF
pF
V
V
V
V
Ω
Ω
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
PESD3V3S4UF_PESD5V0S4UF_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 17 January 2008
4 of 13
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