TC74ACT151P/F/FN
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74ACT151P,TC74ACT151F,TC74ACT151FN
8-Channel Multiplexer
Note:
xxxFN (JEDEC SOP) is not available in
Japan.
The TC74ACT151 is an advanced high speed CMOS
8-CHANNEL MULTIPLEXER fabricated with silicon gate and
double-layer metal wiring C
2
MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
One of eight date input signals (D0-D7) is selected by decoding
of the three-bit address input (A, B, C). The selected data appears
on two outputs: non-inverting (Y) and inverting (W).
The
STROBE
input provides two output conditions; a low
level on the
STROBE
input transferrs the selected data to the
outputs. A high level on the
STROBE
input sets the Y output
low and the W output high without regard to the data or select
input conditions.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74ACT151P
TC74ACT151F
Features
•
•
•
•
High speed: t
pd
=
7.1 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
8
μA
(max) at Ta
=
25°C
Compatible with TTL outputs: V
IL
=
0.8 V (max)
V
IH
=
2.0 V (min)
Symmetrical output impedance: |I
OH
|
=
I
OL
=
24 mA (min)
Capability of driving 50
Ω
•
•
transmission lines.
∼
Balanced propagation delays: t
pLH
−
t
pHL
Pin and function compatible with 74F151
TC74ACT151FN
Weight
DIP16-P-300-2.54A: 1.00 g (typ.)
SOP16-P-300-1.27A: 0.18 g (typ.)
SOL16-P-150-1.27: 0.13 g (typ.)
Pin Assignment
1
2007-10-01
TC74ACT151P/F/FN
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−
0.5 to 7.0
−
0.5 to V
CC
+
0.5
−
0.5 to V
CC
+
0.5
±
20
±
50
±
50
±
100
Unit
V
V
V
mA
mA
mA
mA
mW
°C
500 (DIP) (Note 2)/180 (SOP)
−
65 to 150
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40
to 65°C. From Ta
=
65 to 85°C a derating factor of
−10
mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dV
Rating
4.5 to 5.5
0 to V
CC
0 to V
CC
−
40 to 85
Unit
V
V
V
°C
ns/V
0 to 10
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
3
2007-10-01
TC74ACT151P/F/FN
Electrical Characteristics
DC Characteristics
Test Condition
Characteristics
Symbol
V
CC
(V)
⎯
⎯
Ta
=
25°C
Min
2.0
⎯
Ta
= −
40 to
85°C
Max
⎯
Unit
Typ.
⎯
⎯
Min
2.0
⎯
Max
⎯
High-level input
voltage
Low-level input
voltage
High-level output
voltage
V
IH
V
IL
4.5 to
5.5
4.5 to
5.5
4.5
4.5
(Note)
5.5
4.5
4.5
(Note)
5.5
5.5
5.5
5.5
V
V
0.8
⎯
⎯
⎯
0.8
⎯
⎯
⎯
V
OH
I
OH
= −
50
μ
A
V
IN
=
V
IH
or I
OH
= −
24 mA
V
IL
I
OH
= −
75 mA
I
OL
=
50
μ
A
V
IN
=
V
IH
or I
OL
=
24 mA
V
IL
I
OL
=
75 mA
V
IN
=
V
CC
or GND
V
IN
=
V
CC
or GND
Per input: V
IN
=
3.4 V
Other input: V
CC
or GND
4.4
3.94
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4.5
⎯
⎯
4.4
3.80
3.85
⎯
⎯
⎯
⎯
⎯
⎯
V
0.0
⎯
⎯
⎯
⎯
⎯
0.1
0.36
⎯
±
0.1
0.1
0.44
1.65
±
1.0
μ
A
μ
A
Low-level output
voltage
Input leakage
current
Quiescent supply
current
V
OL
V
I
IN
I
CC
I
C
8.0
1.35
80.0
1.5
mA
Note:
This spec indicates the capability of driving 50
Ω
transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
AC Characteristics
(C
L
=
50 pF, R
L
=
500
Ω,
input: t
r
=
t
f
=
3 ns)
Characteristics
Propagation delay
time
(D-Y, W)
Propagation delay
time
(A, B, C-Y, W)
Propagation delay
time
( ST -Y, W)
Input capacitance
Power dissipation
capacitance
Symbol
Test Condition
V
CC
(V)
t
pLH
t
pHL
t
pLH
t
pHL
t
pLH
t
pHL
C
IN
C
PD
(Note)
⎯
Ta
=
25°C
Min
⎯
Ta
= −
40 to
85°C
Max
11.8
Min
1.0
Max
13.5
Unit
Typ.
7.5
5.0
±
0.5
ns
⎯
5.0
±
0.5
⎯
9.5
15.8
1.0
18.0
ns
⎯
⎯
⎯
5.0
±
0.5
⎯
⎯
⎯
6.3
5
66
10.1
10
⎯
1.0
⎯
⎯
11.5
10
⎯
ns
pF
pF
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC
(opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
4
2007-10-01
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
