TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
SESD Series Enhanced ESD Diode Arrays
Description
RoHS
Pb
GREEN ELV
The SESD Series Enhanced ESD Diode Arrays provides
higher order ESD protection in signal-integrity-preserving
unidirectional arrays for the world’s most challenging high
speed serial interfaces. Compelling packaging options
include the standard 2.5mmx1.0mm and the SOD-883.
Standard packages minimize trace layout complexity,
save significant PCB space, and improve reusability of the
footprints. The nominal capacitance makes the devices
applicable to the worlds’ fastest consumer serial interfaces.
Pinout
1004 DFN array
Features
• 0.30pF TYP capacitance
4
5
1
2
3.G
• ESD, IEC61000-4-2,
±22kV contact, ±22kV air
• Low clamping voltage
of 13V @ I
PP
=2.2A
(t
P
=8/20μs)
• Low profile 1004 and
0402 DFN array packages
• Facilitates the
preservation of signal
integrity
• ELV Compliant
• RoHS Compliant and Lead
Free
• Moisture Sensitivity Level
(MSL Level-1)
10
9
1
8.G
2
7
6
0402 DFN array
3
Bottom View
Applications
• Ultra-high speed data
lines
• USB 3.1, 3.0, 2.0
• HDMI 2.0, 1.4a, 1.3
• DisplayPort
(TM)
1
2
• Consumer, mobile and
portable electronics
• Tablet PC and external
storage with high speed
interfaces
• Applications requiring
high ESD performance in
small packages
Functional Block Diagram
1
2
4
5
• V-by-One
®
• Thunderbolt
Additional Information
3
0402 DFN array
G, 3, 8
1004 DFN array
Datasheet
Resources
Samples
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Absolute Maximum Ratings
Symbol
I
PP
T
OP
T
STOR
Parameter
Peak Current (t
p
=8/20μs)
Operating Temperature
Storage Temperature
Value
2.2
-55 to 125
-55 to 150
Units
A
°C
°C
Thermal Information
Parameter
Storage Temperature Range
Maximum Junction Temperature
Maximum Lead Temperature
(Soldering 20-40s)
Rating
-55 to 150
150
260
Units
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
1004 DFN Array Electrical Characteristics -
(T
OP
=25
°
C)
Parameter
Input Capacitance
Breakdown Voltage
Reverse Working Voltage
Reverse Leakage Current
Clamping Voltage
ESD Withstand Voltage
I
L
@ V
RWM
=5.0V
V
CL
@ I
PP
=2.2A
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
±22
±22
25
13.0
Test Conditions
@ V
R
= 0V, f = 3GHz
V
BR
@ I
T
=1mA
Min
Typ
0.30
8.80
7
.0
Max
Units
pF
V
V
nA
V
kV
0402 DFN Array Electrical Characteristics -
(T
OP
=25
°
C)
Parameter
Input Capacitance
Breakdown Voltage
Reverse Working Voltage
Reverse Leakage Current
Clamping Voltage
ESD Withstand Voltage
I
L
@ V
RWM
=5.0V
V
CL
@ I
PP
=2.2A
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
±22
±22
25
13.0
Test Conditions
@ V
R
= 0V, f = 3GHz
V
BR
@ I
T
=1mA
Min
Typ
0.30
8.80
7
.0
Max
Units
pF
V
V
nA
V
kV
Insertion Loss Diagram - SESD 1004Q4UG-030-088
0
-5.0
Insertion Loss Diagram - SESD0402Q2UG-0030-088
0
-5.0
S21 Insertion Loss (dB)
-10.0
S21 Insertion Loss (dB)
1.E+07
1.E+08
1.E+09
1.E+10
-10.0
-15.0
-15.0
-20.0
-25.0
-20.0
-25.0
-30.0
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
-30.0
1.E+06
Frequency (Hz)
Frequency (Hz)
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Device IV Curve
1.0
0.8
0.6
0.4
0.2
Current (mA)
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Voltage (V)
USB3.0 Eye Diagram
5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern
Without SESD Device
With SESD Device
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus) Temp (T
L
)
to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Temperature (t
L
)
Pb – Free assembly
150°C
Temperature
T
P
T
L
T
S(max)
Preheat
Ramp-up
t
P
Critical Zone
T
L
to T
P
200°C
60 – 180 secs
3°C/second max
3°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
6°C/second max
8 minutes Max.
260°C
t
L
Ramp-do
Ramp-down
T
S(min)
t
S
time to peak temperature
25
Peak Temperature (T
P
)
Time within 5°C of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
Time
Product Characteristics of 0402 DFN Package
Lead Plating
Lead Material
Lead Coplanarity
Substrate material
Body Material
Pre-Plated Frame
Copper Alloy
0.0004 inches (0.102mm)
Silicon
V-0 per UL 94 Molded Epoxy
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Package Dimensions — 1004 DFN Array
D
A1
8xb
5
LxN
6
Symbol
A
A1
A3
b1 2x
Millimeters
Min
0.33
0.00
0.90
2.40
0.15
0.35
0.33
0.00
Typ
0.38
0.02
0.127 ref.
1.00
2.50
0.20
0.40
0.38
0.10
0.50 BSC
0.50 BSC
0.08 BSC
0.13 BSC
10
Millimeters
1.20
2.20
0.50
0.20
0.40
0.20
0.30
0.20
0.50 BSC
1.00 BSC
Inches
0.047
0.087
0.020
0.008
0.016
0.008
0.012
0.008
0.020 BSC
0.039 BSC
Inches
Max
0.43
0.05
1.10
2.60
0.25
0.45
0.43
0.15
Min
0.013
0
0.035
0.094
0.006
0.014
0.013
0.000
Typ
0.015
--
0.005 ref.
0.039
0.098
0.008
0.016
0.015
0.004
0.020 BSC
0.020 BSC
0.003 BSC
0.005 BSC
10
0.043
0.102
0.010
0.018
0.017
0.006
Max
0.017
0.002
L1 2x
Gnd 3
4
7
E
e1
e
Gnd 8
R1
D
E
b
b1
L
L1
e
2
2xR
N=10
1
Pin 1 ID
Marking Location
A3
A
SIDE VIEW 1
TOP VIEW
SIDE VIEW 2
(Front)
BOTTOM VIEW
9
e1
R
R1
N
END VIEW 1
A
END VIEW 2
2x F
2x F1
A
2x F
2x F1
Symbol
A
B
C
D
D1
B
D1
G1
4x G
2x D1
B
G1
G
4x
4x G
E
F
F1
G
E
8x D
E
8x C
8x D
G1
8x C
Recommended
Alternate
Pad Layout
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
TVS Diode Arrays
(SPA
®
Diodes)
SESD Series Enhanced ESD Discrete TVS
Package Dimensions — 0402 DFN Array
Symbol
A
A1
A3
D
E
K
L1
L2
b
e1
e2
Symbol
A
B
C
D
D1
E
F
Millimeters
Min
0.33
0
0.55
0.95
0.35
0.45
0.20
0.14
Typ
0.38
-
0.13 ref.
0.60
1.00
0.40
0.50
0.25
0.19
0.35 BSC
0.65 BSC
Millimeters
0.60
1.00
0.23
0.35
0.35
0.15
0.30
Inches
0.024
0.039
0.009
0.014
0.014
0.006
0.012
Inches
Max
0.43
0.05
0.65
1.05
0.45
0.55
0.30
0.24
Min
0.013
0
0.022
0.037
0.014
0.018
0.008
0.006
Typ
0.015
-
0.005 ref.
0.024
0.039
0.016
0.020
0.010
0.007
0.014 BSC
0.026 BSC
0.026
0.041
0.018
0.022
0.012
0.009
Max
0.017
0.002
Pad Layout
Part Numbering System
SESD
xxxx
Q
x
U G 0030
–
088
SESD product
Package
0402
1004
DFN Array Package
No of channel
2: Two Channels
4: Four Channels
Breakdown Voltage
088: 8.8V (TYP)
Input Capacitance
0030: 0.30pF (TYP)
Common GND pin
Directional
U: Unidirectional
Part Marking System
D D
0402
4D 4D
1004
Ordering Information
Part Number
SESD0402Q2UG-0030-088
SESD1004Q4UG-0030-088
Package
0402 DFN Array
1004 DFN Array
Marking
I D
I 4D
Ordering Part Number
RF3925-000
RF3923-000
Minimum Order Quantity
50,000
25,000
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/29/16
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