Important notice
Dear Customer,
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Nexperia.
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
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© Nexperia B.V. (year). All rights reserved.
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PESD5V0L6UAS;
PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
Rev. 03 — 18 August 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance 6-fold ESD protection diode arrays in small plastic packages designed to
protect up to six transmission or data lines from the damage caused by ElectroStatic
Discharge (ESD) and other transients.
Table 1.
Product overview
Package
Name
PESD5V0L6UAS
PESD5V0L6US
TSSOP8
SO8
NXP
SOT505-1
SOT96-1
Type number
1.2 Features
I
I
I
I
ESD protection of up to six lines
Low diode capacitance
Max. peak pulse power: P
PP
= 35 W
Low clamping voltage: V
(CL)R
= 15 V
I
I
I
I
Ultra low leakage current: I
RM
= 8 nA
ESD protection of up to 20 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 2.5 A
1.3 Applications
I
Computers and peripherals
I
Communication systems
I
Audio and video equipment
I
High speed data lines
I
Parallel ports
1.4 Quick reference data
Table 2.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse stand-off voltage
diode capacitance
V
R
= 0 V;
f = 1 MHz
Conditions
Min
-
-
Typ
-
16
Max
5
19
Unit
V
pF
NXP Semiconductors
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
2. Pinning information
Table 3.
Pin
TSSOP8
1
2
3
4
5
6
7
8
SO8
1
2
3
4
5
6
7
8
cathode 1
cathode 2
cathode 3
cathode 4
cathode 5
common anode
common anode
cathode 6
sym004
Discrete pinning
Description
cathode 1
cathode 2
cathode 3
cathode 4
cathode 5
common anode
common anode
cathode 6
sym004
Simplified outline
Symbol
8
5
1
2
3
8
7
6
5
1
4
4
8
5
1
2
3
4
8
7
6
5
1
4
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0L6UAS
PESD5V0L6US
TSSOP8
SO8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm
plastic small outline package; 8 leads;
body width 3.9 mm
Version
SOT505-1
SOT96-1
Type number
4. Marking
Table 5.
Marking
Marking code
5V06U
5V06US
Type number
PESD5V0L6UAS
PESD5V0L6US
PESD5V0L6UAS_US_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 August 2009
2 of 14
NXP Semiconductors
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
8/20
µs
pulse
8/20
µs
pulse
[1][2]
[1][2]
Min
-
-
-
−65
−65
Max
35
2.5
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponentially decay waveform according to IEC 61000-4-5;
see
Figure 1.
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 7.
Symbol
ESD
ESD maximum ratings
Parameter
electrostatic discharge
capability
Conditions
IEC 61000-4-2
(contact discharge)
HBM MIL-STD883
[1][2]
Min
-
-
Max
20
10
Unit
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
Figure 2.
Measured from pin 1, 2, 3, 4, 5 or 8 to pin 6 or 7.
Table 8.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2, level 4 (ESD); see
Figure 2
HBM MIL-STD883, class 3
PESD5V0L6UAS_US_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 August 2009
3 of 14
NXP Semiconductors
PESD5V0L6UAS; PESD5V0L6US
Low capacitance 6-fold ESD protection diode arrays
001aaa191
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
pp
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
PESD5V0L6UAS_US_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 August 2009
4 of 14
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