PESD5V0V1BDSF
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 17 April 2012
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package
designed to protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits
Bidirectional ESD protection of one line
Very low diode capacitance C
d
= 5.3 pF
ESD protection up to
25
kV according to IEC 61000-4-2
Ultra small SMD package
Optimized diode structure for ultra high ESD robustness
1.3 Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
4
Typ
-
5.3
Max
5
6
Unit
V
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
1
2
1
sym045
Simplified outline
Graphic symbol
2
Transparent
top view
NXP Semiconductors
PESD5V0V1BDSF
Very low capacitance bidirectional ESD protection diode
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0V1BDSF
Description
Version
SOD962
DSN0603-2 leadless ultra small package; 2 terminals;
body 0.6
0.3
0.3 mm
Type number
4. Marking
Table 4.
Marking codes
Marking code
D
Type number
PESD5V0V1BDSF
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1]
[1]
Min
-
-
-
55
65
Max
20
2
150
+150
+150
Unit
W
A
C
C
C
Non-repetitive current pulse 8/20
s
exponentially decaying waveform according to IEC 61000-4-5.
PESD5V0V1BDSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 April 2012
2 of 12
NXP Semiconductors
PESD5V0V1BDSF
Very low capacitance bidirectional ESD protection diode
ESD maximum ratings
Parameter
electrostatic
discharge voltage
Conditions
IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
MIL-STD-883 (human body model)
[1]
Table 6.
Symbol
V
ESD
Min
-
-
-
Max
25
25
10
Unit
kV
kV
kV
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
IEC 61000-4-2, level 4 (ESD)
MIL-STD-883; class 3B (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0V1BDSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 April 2012
3 of 12
NXP Semiconductors
PESD5V0V1BDSF
Very low capacitance bidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
V
RWM
I
RM
V
CL
V
BR
C
d
r
dyn
[1]
[2]
Parameter
reverse standoff
voltage
reverse leakage
current
clamping voltage
breakdown voltage
diode capacitance
dynamic resistance
Conditions
Min
-
Typ
-
1
-
-
-
5.3
2.0
Max
5
100
11.5
12.8
10
6
-
Unit
V
nA
V
V
V
pF
V
RWM
= 5 V
I
PP
= 0.5 A
I
PP
= 1 A
I
R
= 1 mA
f = 1 MHz; V
R
= 0 V
[2]
[1]
[1]
-
-
-
6
4
-
Non-repetitive current pulse 8/20
s
exponential decay waveform according to IEC 61000-4-5.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANS/IESD STM5.1-2008.
6
C
d
(pF)
5
018aaa135
I
PPM
I
PP
4
-V
CL
-V
BR
-V
RWM
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
3
-
+
2
0
1
2
3
4
V
R
(V)
5
-I
PP
-I
PPM
006aab325
f = 1 MHz; T
amb
= 25
C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
PESD5V0V1BDSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 April 2012
4 of 12
NXP Semiconductors
PESD5V0V1BDSF
Very low capacitance bidirectional ESD protection diode
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Fig 5.
ESD clamping test setup and waveforms
PESD5V0V1BDSF
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 17 April 2012
5 of 12
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