电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

TV30C180J-G

产品描述ESD Suppressors / TVS Diodes 3000W, 18V
产品类别分立半导体    二极管   
文件大小122KB,共6页
制造商Comchip Technology
官网地址http://www.comchiptech.com/
标准
下载文档 详细参数 全文预览

TV30C180J-G在线购买

供应商 器件名称 价格 最低购买 库存  
TV30C180J-G - - 点击查看 点击购买

TV30C180J-G概述

ESD Suppressors / TVS Diodes 3000W, 18V

TV30C180J-G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Comchip Technology
Reach Compliance Codecompliant
ECCN代码EAR99
峰值回流温度(摄氏度)NOT SPECIFIED
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
SMD Transient Voltage Suppressor
TV30C5V0-G Thru. TV30C441-G
Working Peak Reverse Voltage: 5.0 to 440 Volts
Power Dissipation: 3000 Watts
RoHS Device
Features
- Glass passivated chip.
- 3000W peak pulse power capability with a 10/1000µs
waveform, repetitive rate (duty cycle):0.01%
- Low leakage.
- Uni and Bidirectional unit.
- Excellent clamping capability.
- Very fast response time.
- UL recognized file # E349157
-
Range:
TV30C5V0J(B) thru. TV30C171J(B)
R
SMC/DO-214AB
0.280(7.02)
0.260(6.52)
0.126(3.16)
0.114(2.86)
0.245(6.15)
0.220(5.52)
0.320(8.02)
0.305(7.64)
0.012(0.30)
0.006(0.15)
0.103(2.59)
0.079(1.98)
0.060(1.51)
0.030(0.75)
0.008(0.20)
0.000(0.00)
Mechanical Data
- Case: DO-214AB/SMC molded plastic.
- Epoxy: UL 94V-0 rate flame retardant
- Terminals: Solderable per MIL-STD-750, method 2026.
- Polarity: Color band denoted cathode
end except bipolar.
- Weight:
0.230 gram
(approx.)
Dimensions in inches and (millimeter)
Circuit Diagram
Bi-directional
Uni-directional
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristics
Peak power dissipation with a 10/1000μs
waveform (Note 1)
Peak pulse current with a 10/1000μs
waveform (Note 1)
Power dissipation on infinite heatsink
at T
L
=75°C
Peak forward surge current, 8.3ms single
half sine-wave unidirectional only (Note 2)
Maximum instantaneous forward voltage
at 100A for unidirectional only (Note 3)
Operation junction and storage
temperature range
Symbol
P
PP
I
PP
P
D
I
FSM
V
F
T
J
, T
STG
Value
3000
See Next Table
6.0
300
3.5/5.0
-55 to +150
Units
W
A
W
A
V
°C
Notes: 1. Non-repetitive current pulse, per Fig.5 and derated above T
A
=25°C, per Fig.1
2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
3. V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTV04
REV:H
Page 1
Comchip Technology CO., LTD.

推荐资源

热门文章更多

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1733  488  2409  367  1645  35  10  49  8  34 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved