USB50803 – USB50824
Available
Unidirectional Low Capacitance TVSarray
DESCRIPTION
This USB50803 – USB50824 family of Transient Voltage Suppressor (TVS) arrays is packaged in
an SO-8 configuration giving protection to 2 unidirectional data or interface lines. It is designed for
use in applications where very low capacitance protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2,
electrical fast transients (EFT) per IEC 61000-4-4 and secondary effects of lightning.
Using the
schematic
on the last page, pins 7 & 8 are tied together for the first protected positive
line, and pins 1 & 2 are tied together to the ground. The same would then occur where pins 5 & 6
are tied together for a second protected positive line and pins 2 & 3 are tied together to the ground.
If protecting a negative line with respect to ground, these may be switched in polarity connections
where the pins are tied together in this manner for unidirectional protection.
These TVS arrays have a peak power rating of 500 watts for an 8/20
µsec
pulse. This array is
suitable for protection of sensitive circuitry such as TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC
microprocessors, Universal Serial Bus (USB) and I/O transceivers.
SO-8 Package
Also available:
Bidirectional version
(with opposite polarity in
each leg)
USB50803C(-A) –
USB50824C(-A)
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
Provides electrically isolated protection for up to 2 unidirectional lines.
Surge protection per IEC 61000-4-2 and IEC 61000-4-4.
UL 94V-0 flammability classification.
Ultra low capacitance; 3 pF per line pair.
Ultra low leakage current.
RoHS compliant versions available.
APPLICATIONS / BENEFITS
•
•
•
EIA-RS485 data rates: 5 Mbs
10 Base T Ethernet.
USB data rate: 900 Mbs
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Peak Pulse Power @ 8/20
µs
(see
figure 1)
Impulse Repetition Rate
Capacitance (f = 1 MHz) @ 0 V
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
P
PP
df
C
T
SP
Value
-55 to +150
500
< .01
3
260
Unit
ºC
W
%
pF
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 1 of 4
USB50803 – USB50824
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Molded SO-8 surface mount.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating.
MARKING: Logo, device marking code (see electrical characteristics table), date code.
POLARITY: Pin #1 marked by dot on top of package.
TAPE & REEL option: Per EIA standard 481. Consult factory for quantities. Carrier tubes with a quantity of 95 pieces are
standard.
WEIGHT: 0.066 grams (approximate).
See
Package Dimensions
on last page.
PART NOMENCLATURE
USB
USB Rated Product
P
PP
Rating (x 100 W)
8 Pin Package
5
08
03
e3
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Rated Standoff Voltage (V
WM
)
(See
Electrical Characteristics
table)
Symbol
V
WM
V
(BR)
V
C
I
D
C
SYMBOLS & DEFINITIONS
Definition
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.
V
WM
must be selected to be equal or be greater than the operating voltage of the line to be protected.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a pulse
time of 20
µs.
Standby Current: Leakage current at V
WM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
ELECTRICAL CHARACTERISTICS
STAND-
OFF
VOLTAGE
V
WM
Volts
MAX
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
(BR)
@1 mA
Volts
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure
2)
Volts
MAX
8
10.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure
2)
Volts
MAX
11
13
26
32
57
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
200
20
1
1
1
CAPACITANCE
(f = 1 MHz)
C
@0V
pF
MAX
3
3
3
3
3
TEMPERATURE
COEFFICIENT
OF V
(BR)
α
VBR
mV/°C
MAX
-5
1
8
11
28
PART
NUMBER
DEVICE
MARKING*
USB50803
USB50805
USB50812
USB50815
USB50824
AF
AG
AH
AJ
AK
* Device marking has an e3 suffix added for the RoHS compliant option, e.g. AFe3, AGe3, AHe3, AJe3, and AKe3.
NOTE:
Transient Voltage Suppressor (TVS) products are normally selected based on their standoff voltage Vwm. The selected
voltage should be equal to or greater than the peak operating voltage of the circuit to be protected.
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 2 of 4
USB50803 – USB50824
GRAPHS
P
PP
– Peak Pulse Power - W
t
p
- Pulse Duration - µs
FIGURE 1
Peak Pulse Power vs Pulse Time
I
PP
– Peak Pulse Current - %I
PP
t – Time in microseconds
FIGURE 2
Pulse Waveform
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 3 of 4
USB50803 – USB50824
PACKAGE DIMENSIONS
Ltr
A
B
C
D
F
G
J
K
L
P
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.188
0.197
4.77
5.00
0.150
0.158
3.81
4.01
0.053
0.069
1.35
1.75
0.011
0.021
0.28
0.53
0.0160 0.050 0.041
1.27
0.050 BSC
1.27 BSC
0.006
0.010
0.15
0.25
0.004
0.008
0.10
0.20
0.189
0.206
4.80
5.23
0.228
0.244
5.79
6.19
PAD LAYOUT / SCHEMATIC
1.
2. PAD LAYOUT:
3.
4.
RF01092-2, Rev. A (10/29/13)
©2013 Microsemi Corporation
Page 4 of 4
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi
:
USB50815/TR13 USB50805e3/TR7 USB50815/TR7 USB50803e3/TR7 USB50803e3/TR13 USB50803/TR7
USB50805e3/TR13 USB50803/TR13 USB50805/TR7 USB50815e3/TR7 USB50824e3/TR13 USB50812/TR7
USB50812e3/TR7 USB50815e3/TR13 USB50824/TR7 USB50824e3/TR7 USB50805/TR13 USB50812e3/TR13
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
