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PESD24VS1ULD
Unidirectional ESD protection diode
Rev. 1 — 19 October 2010
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one
signal line from the damage caused by ESD and other transients. The device is housed in
a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with
visible and solderable side pads.
1.2 Features and benefits
ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Low clamping voltage: V
CL
= 70 V
AEC-Q101 qualified
ESD protection up to 23 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 3 A
Max. peak pulse power: P
PP
= 150 W
Ultra low leakage current: I
RM
< 1 nA
1.3 Applications
Computers and peripherals
Audio and video equipment
Communication systems
Portable electronics
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
C
d
Parameter
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
Conditions
Min
-
-
Typ
-
23
Max
24.0
50
Unit
V
pF
NXP Semiconductors
PESD24VS1ULD
Unidirectional ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD24VS1ULD
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
0010
0000
Type number
PESD24VS1ULD
[1]
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description
PESD24VS1ULD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 19 October 2010
2 of 12
NXP Semiconductors
PESD24VS1ULD
Unidirectional ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
I
PP
T
j
T
amb
T
stg
[1]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
μs
t
p
= 8/20
μs
[1]
[1]
Min
-
-
-
−55
−65
Max
150
3
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
[1][2]
Min
-
-
Max
23
10
Unit
kV
kV
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 2.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 3.
ESD pulse waveform according to
IEC 61000-4-2
© NXP B.V. 2010. All rights reserved.
PESD24VS1ULD
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 19 October 2010
3 of 12
NXP Semiconductors
PESD24VS1ULD
Unidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
V
RWM
I
RM
V
BR
C
d
V
CL
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
I
PP
= 1 A
I
PP
= 3 A
r
dyn
[1]
[2]
[3]
Conditions
V
RWM
= 24.0 V
I
R
= 5 mA
f = 1 MHz;
V
R
= 0 V
[1][2]
Min
-
-
26.5
-
Typ
-
<1
27
23
Max
24.0
50
27.5
50
Unit
V
nA
V
pF
-
-
[2][3]
-
-
1.6
36
70
-
V
V
Ω
dynamic resistance
I
R
= 10 A
-
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to pin 2.
Non-repetitive current pulse; Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse;
ANSI/ESD STM5.1-2008.
10
4
P
PP
(W)
10
3
006aac488
1.2
P
PP
P
PP(25°C)
0.8
001aaa633
10
2
0.4
10
1
10
10
2
t
p
(μs)
10
3
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25
°C
Fig 4.
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 5.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD24VS1ULD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 19 October 2010
4 of 12
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