Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage
suppression
Rev. 01 — 3 June 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small
Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and transient overvoltage.
Table 1.
Product overview
Package
NXP
PESD5V0S1UJ
PESD12VS1UJ
SOD323F
JEITA
SC-90
single
Configuration
Type number
1.2 Features
I
Transient Voltage Suppression (TVS)
protection of one line
I
Max. peak pulse power: P
PP
= 890 W
I
Low clamping voltage: V
CL
= 19 V
I
Low leakage current: I
RM
= 300 nA
I
ESD protection up to 30 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5 (surge); I
PP
= 47 A
I
AEC-Q101 qualified
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Medical and industrial equipment
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse standoff voltage
PESD5V0S1UJ
PESD12VS1UJ
C
d
diode capacitance
PESD5V0S1UJ
PESD12VS1UJ
f = 1 MHz; V
R
= 0 V
-
-
480
160
530
180
pF
pF
-
-
-
-
5
12
V
V
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0S1UJ
PESD12VS1UJ
SC-90
Description
plastic surface-mounted package; 2 leads
Version
SOD323F
Type number
4. Marking
Table 5.
Marking codes
Marking code
1Q
1R
Type number
PESD5V0S1UJ
PESD12VS1UJ
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
Parameter
peak pulse power
PESD5V0S1UJ
PESD12VS1UJ
I
PP
peak pulse current
PESD5V0S1UJ
PESD12VS1UJ
t
p
= 8/20
µs
[1][2]
Conditions
t
p
= 8/20
µs
[1][2]
Min
-
-
-
-
Max
890
600
47
22.5
Unit
W
W
A
A
PESD5V0S1UJ_PESD12VS1UJ_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 3 June 2009
2 of 14
NXP Semiconductors
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
≤
25
°C
[3]
[4]
Min
-
-
-
−55
−65
Max
420
720
150
+150
+150
Unit
mW
mW
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Soldering point of cathode tab.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
ESD
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[1]
Min
-
-
-
Max
30
400
16
Unit
kV
V
kV
Table 8.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESD5V0S1UJ_PESD12VS1UJ_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 3 June 2009
3 of 14
NXP Semiconductors
PESD5V0S1UJ; PESD12VS1UJ
Unidirectional ESD protection for transient voltage suppression
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Thermal characteristics
Table 9.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
290
170
35
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
PESD5V0S1UJ_PESD12VS1UJ_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 3 June 2009
4 of 14
能源基础设施
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
