1N2970B – 1N3015B and
1N3993A – 1N3998A
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
10 Watt Zener Diodes
Qualified per MIL-PRF-19500/124
DESCRIPTION
The JEDEC registered 1N2970B through 1N3015B and 1N3993A through 1N3998A series are
10W Zener diodes with voltage regulation values between 3.9 and 200V. They are available
in JAN, JANTX, and JANTXV military qualification grades on most voltage values.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
•
Internal solder bond construction.
Hermetically sealed (welded).
Zener regulation voltages from 3.9 V to 200 V.
Standard and reverse polarities are available.
Consult factory for surface mount equivalents.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/124.
RoHS compliant devices available by adding “e3” suffix (commercial grade only).
DO-213AA
(DO-4)
Package
APPLICATIONS / BENEFITS
•
•
•
•
Regulates voltage over a broad range of current and temperature.
Standard voltage tolerances are +/- 5%.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction Temperature
Storage Temperature
Thermal Resistance Junction-to-Case
(1)
Steady-State Power Dissipation @ T
C
= +55 ºC
Forward Voltage @ 2.0 A
Solder Pad Temperature @ 10 s
NOTES:
1. Derate at 0.083 W/ºC above +55 ºC.
Symbol
T
J
T
STG
R
ӨJC
P
D
V
F
T
SP
Value
-65 to +175
-65 to +200
12
10
1.5
260
Unit
o
C
o
C
o
C/W
W
V
ºC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0075, Rev. 3 (5/24/13)
©2013 Microsemi Corporation
Page 1 of 8
1N2970B – 1N3015B and
1N3993A – 1N3998A
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Industry standard DO-4, (DO-203AA), 7/16” hex, stud with 10-32 threads, welded, hermetically sealed metal and glass.
TERMINALS: Tin-lead plated or RoHS compliant matte-tin plating (commercial grade only) on nickel.
POLARITY:
1N2970B – 1N3015B:
Std. Polarity is anode to stud. Reverse polarity (cathode to stud) indicated by suffix “RB”.
1N3993A – 1N3998A:
Std. Polarity is cathode to stud. Reverse polarity (anode to stud) indicated by suffix “RA”.
MOUNTING HARDWARE: Consult factory for optional insulator, bushing solder terminal, washers, and nut.
WEIGHT: Approximately 7.5 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
1N2970 – 1N3015 series only:
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
1N2970 R B
e3
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
5% Tolerance
(Consult factory for other
tolerances)
Polarity
blank = Standard (Anode to
Stud)
R = Reverse (Cathode to Stud)
1N3993 – 1N3998 series only:
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
1N3993 R A
e3
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
5% Tolerance
(Consult factory for other
tolerances)
Polarity
blank = Standard (Cathode to
Stud)
R = Reverse (Anode to Stud)
T4-LDS-0075, Rev. 3 (5/24/13)
©2013 Microsemi Corporation
Page 2 of 8
1N2970B – 1N3015B and
1N3993A – 1N3998A
SYMBOLS & DEFINITIONS
Definition
Regulator Current: The dc regulator current (I
Z
), at a specified test point (I
ZT
), near breakdown knee (I
ZK
).
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Reverse Voltage: The reverse voltage dc value, no alternating component.
Zener Voltage: The Zener voltage the device will exhibit at a specified current (I
Z
) in its breakdown region.
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typically 10% of I
ZT
or I
ZK
) and superimposed on I
ZT
or I
ZK
respectively.
Symbol
I
ZT
I
R
I
ZM
V
F
V
R
V
Z
Z
ZT
or Z
ZK
T4-LDS-0075, Rev. 3 (5/24/13)
©2013 Microsemi Corporation
Page 3 of 8
1N2970B – 1N3015B and
1N3993A – 1N3998A
ELECTRICAL CHARACTERISTICS
NOMINAL
ZENER
VOLTAGE
V
Z
@
I
ZT
(Note 2)
Volts
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
30
33
36
39
43
45
47
50
51
52
56
62
68
75
82
91
100
105
110
120
130
140
150
160
175
180
200
ZENER
TEST
CURRENT
(
I
ZT
)
mA
640
580
530
490
445
405
370
335
305
275
250
230
210
190
180
170
155
145
140
130
125
115
105
100
95
85
75
70
65
60
55
55
50
50
50
45
40
37
33
30
28
25
25
23
20
19
18
17
16
14
14
12
MAX. DYNAMIC
IMPEDANCE
(Note 3)
Z
ZK
@
1mA (I
ZK
)
Ohms
400
400
550
550
600
700
500
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
300
300
300
300
400
400
400
500
500
500
500
600
600
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1750
1850
2000
MAX DC ZENER
CURRENT
(
I
ZM
) @ 25
o
C
Stud Temp.
(Note 4)
mA
2440
2200
2000
1840
1680
1520
1500
1350
1180
1100
980
890
820
750
600
640
605
500
525
440
480
435
400
310
340
320
300
260
240
220
185
200
165
185
160
170
150
137
125
115
97
91
75
82
77
71
58
62
58
46
52
46
TEMP.
COEFF.
α
VZ
MAX**
REVERSE
CURRENT
I
R
@ V
R
µA
100
100
50
10
10
10
150
100
50
25
25
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
JEDEC
TYPE NO.
(Note 1)
POLARITY
†1N3993A
†1N3994A
†1N3995A
†1N3996A
†1N3997A
†1N3998A
†1N2970B
†1N2971B
†1N2972B
†1N2973B
†1N2974B
†1N2975B
†1N2976B
†1N2977B
1N2978B
†1N2979B
†1N2980B
1N2981B
†1N2982B
1N2983B
†1N2984B
†1N2985B
†1N2986B
1N2987B
†1N2988B
†1N2989B
†1N2990B
†1N2991B
†1N2992B
†1N2993B
1N2994B
†1N2995B
1N2996B
†1N2997B
1N2998B
†1N2999B
†1N3000B
†1N3001B
†1N3002B
†1N3003B
†1N3004B
†1N3005B
1N3006B
†1N3007B
†1N3008B
†1N3009B
1N3010B
†1N3011B
†1N3012B
1N3013B
†1N3014B
†1N3015B
Z
ZT
@ I
ZT
Ohms
2.0
1.5
1.2
1.1
1.0
1.1
1.2
1.3
1.5
2.0
3
3
3
3
3
3
4
4
4
4
4
5
5
6
7
8
9
10
11
12
13
14
15
15
15
16
17
18
22
25
35
40
45
55
75
100
125
175
200
250
260
300
%/
o
C
-0.060
-0.050
+0.025
+0.030
+0.040
+0.045
+0.057
+0.067
+0.070
+0.075
+0.081
+0.085
+0.079
+0.080
+0.070
+0.082
+0.083
+0.075
+0.085
+0.075
+0.086
+0.087
+0.088
+0.080
+0.090
+0.091
+0.092
+0.093
+0.094
+0.095
+0.090
+0.095
+0.090
+0.096
+0.090
+0.096
+0.097
+0.097
+0.098
+0.098
+0.099
+0.110
+0.095
+0.110
+0.110
+0.110
+0.095
+0.110
+0.110
+0.095
+0.110
+0.110
Volts
0.5
0.5
1.0
1.0
1.0
2.0
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
10.5
11.4
12.2
13.0
13.7
14.0
15.2
16.7
18.2
18.2
20.6
22.8
25.1
27.4
29.7
32.7
33.0
35.8
36.0
38.8
39.0
42.6
47.1
51.7
56.0
62.2
69.2
76.0
76.0
83.6
91.2
98.8
100.0
114.0
121.6
135.0
136.8
152.0
STD.
POLARITY
CATHODE
TO
STUD
STD.
POLARITY
ANODE
TO STUD
* JEDEC Registered Data.
** Not JEDEC Data.
† Have JAN, JANTX and JANTXV qualifications to MIL-PRF-19500/124.
See further notes on following page.
T4-LDS-0075, Rev. 3 (5/24/13)
©2013 Microsemi Corporation
Page 4 of 8
1N2970B – 1N3015B and
1N3993A – 1N3998A
NOTES:
1.
2.
3.
1N3993A - 1N3998A and 1N2970B – 1N3015B series are +/- 5% tolerance. If a tighter tolerance is required, consult factory.
The electrical characteristics are measured after allowing the device to stabilize for 90 seconds with 30 C base temperature.
The Zener impedance (Z
ZT
) is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal
to 10% of the dc Zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. When making Zener impedance measurements at
the I
ZK
test point, it may be necessary to insert a 60 Hz band pass filter between the diode and voltmeter to avoid errors
resulting from low level noise signals. A curve showing the variation of Zener impedance vs. Zener current for three
representative types is shown in
Figures 2 and 3.
Also see Microsemi
MicroNote 202.
Derate I
Z
linearly to 0.0 mA at +175°C, for T
C
> +55°C. These values of I
ZM
may be exceeded in the case of individual
diodes. The values shown are calculated for the worst case that is a unit of +/-5% tolerance at the high voltage end of its
tolerance range. Allowance has also been made for the rise in Zener voltage above V
ZT
, which results from Zener
impedance and the increase in junction temperature as power dissipation approaches 10 watts.
o
4.
T4-LDS-0075, Rev. 3 (5/24/13)
©2013 Microsemi Corporation
Page 5 of 8
MEMS传感器
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