IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
SCOTTSDALE DIVISION
Low Voltage Surface Mount
500 mW Avalanche Diodes
DESCRIPTION
The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface
mount Zener voltage regulators provides a selection from 3.3 to 33 volts in
standard 5% tolerances as well as tighter tolerances identified by different
suffix letters on the part number. These have an internal-metallurgical-bond
option as identified by the “–1” suffix. This internally bonded Zener package
construction is also in JAN, JANTX, and JANTXV military qualifications.
Microsemi also offers numerous other Zener products to meet higher and
lower power applications.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AA
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
•
•
•
Surface mount equivalent to JEDEC registered
1N5518 thru 1N5546 series
Internal metallurgical bond with the “-1” suffix
Also available in JAN, JANTX, and JANTXV
qualifications per MIL-PRF-19500/437 by adding
the JAN, JANTX, or JANTXV prefixes to part
numbers for desired level of screening; (e.g.
JANTX1N4099UR-1, JANTXV1N4109CUR-1, etc.)
Nonbonded types also available without the “-1”
suffix for both the axial and surface mount
packages
DO-7 or DO-35 glass body axial-leaded Zener
equivalents also available per JEDEC registration
with part numbers 1N5518 thru 1N5546 on
separate data sheets
•
•
•
•
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Extensive selection from 3.3 to 33 V
Standard voltage tolerances are plus/minus 5% with
a “B” suffix, e.g. 1N5518BUR-1, etc.
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively, e.g. 1N5518CUR-1,
1N5518DUR-1, etc.
Hermetically sealed surface mount package
Nonsensitive to ESD per MIL-STD-750 Method 1020
Minimal capacitance (see Figure 3)
Inherently radiation hard as described in Microsemi
MicroNote 050
•
•
•
•
•
•
MAXIMUM RATINGS
•
•
Operating and Storage temperature: -65
º
C to
+175
º
C
Thermal Resistance: 100
º
C/W junction to end cap,
or 250
º
C/W junction to ambient when mounted on
FR4 PC board (1 oz Cu) with recommended
footprint (see last page)
Steady-State Power: 0.5 watts at end cap
temperature T
EC
< 125
o
C or at ambient T
A
< 50
º
C
when mounted on FR4 PC board as described for
thermal resistance above (see Figure 2 for
derating)
Forward voltage @200 mA: 1.1 volts
Solder Temperatures: 260
º
C for 10 s (max)
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass DO-213AA
(SOD80 or MLL34) MELF style package
TERMINALS: End caps tin-lead plated solderable
per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band where
diode is to be operated with the banded end positive
with respect to the opposite end for Zener regulation
MARKING: cathode band only
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 2000 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.04 grams
See package dimensions on last page
•
1N5518BUR – 1N5546BUR
•
•
•
•
•
•
Copyright
2003
10-31-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
SCOTTSDALE DIVISION
Low Voltage Surface Mount
500 mW Avalanche Diodes
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS
JEDEC TYPE
NUMBER
(Note 1 and
Note 7)
NOMINAL
ZENER
VOLTAGE
TEST
CURRENT
(T
A
= 25
o
C unless otherwise noted. Based on DC measurements at
MAX. REVERSE CURRENT
(Note 4)
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
(Note 5)
mAdc
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT I
Z
= 250µA
REGULATION
FACTOR
(Note 6)
LOW V
Z
CURRENT
(Note 6)
thermal equilibrium;
V
F
= 1.1 Max @ IF = 200 mA for all types.)
V
Z
@ I
ZT
(Note 2)
VOLTS
I
ZT
mAdc
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
Z
ZT
@ I
ZT
(Note 3)
OHMS
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
∆V
Z
I
ZL
I
R
µAdc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
V
R
– VOLTS
NON & A-
SUFFIX
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
B-C-D
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
I
ZM
N
D
µV/ √Hz
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
mAdc
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
NOTES:
1. TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only V
Z
, I
R
, and V
F
.
Units with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for V
Z
, I
R
, and V
F
. Units with guaranteed limits for all six
parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0% prior to the UR-1 suffix.
2. ZENER VOLTAGE (V
Z
) MEASUREMENT –
o
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 C.
3. ZENER IMPEDANCE (Z
Z
) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (I
ZT
) is superimposed on I
ZT
.
4. REVERSE CURRENT (I
R
) –
Reverse currents are guaranteed and are measured at V
R
as shown on the table.
5. MAXIMUM REGULATOR CURRENT (I
ZM
) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6. MAXIMUM REGULATION FACTOR (∆V
Z
) –
∆V
Z
is the maximum difference between V
Z
at I
ZT
and V
Z
at I
ZL
measured with the device junction in thermal equilibrium.
7. PART NUMBER – These may be ordered as either 1N5518BUR-1 thru 1N5546BUR-1 or as MLL5518B-1 thru MLL5546B-1 part
numbers. For military types, use the 1NxxxUR-1 format and also include JAN, JANTX, or JANTXV prefix for desired screening
level, e.g. JANTX1N5518BUR-1, JANTXV1N5532BUR-1, JANTXV1N5534CUR-1, JANTXV1N5545DUR-1, etc.
1N5518BUR – 1N5546BUR
Copyright
2003
10-31-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
SCOTTSDALE DIVISION
Low Voltage Surface Mount
500 mW Avalanche Diodes
GRAPHS and CIRCUIT
P
d
Rated Power Dissipation (mW)
Noise density, (N
D
) is specified in
microvolt-rms per square-root-hertz.
Actual measurement is performed
using a 1 kHz to 3 kHz frequency
bandpass filter at a constant Zener test
o
current (I
ZT
) at 25 C ambient
temperature.
WWW .
Microsemi
.C
OM
T
EC
T
A
T
EC
, End Cap Temperature ( C) or T
A
Ambient temperature on FR4 PC board
o
FIGURE 1
Noise Density
Measurement Circuit
FIGURE 2
Power Derating Curve
Typical Capacitance in Picofarads (pf)
FIGURE 3
Zener Voltage V
Z
Capacitance vs. Zener Voltage (Typical)
FIGURE 4
Zener Diode Characteristics and Symbol Identification
1N5518BUR – 1N5546BUR
PACKAGE DIMENSIONS
DIM
A
B
C
INCHES
MIN
MAX
0.063
0.067
0.130
0.146
0.016
0.022
MILLIMETERS
MIN
MAX
1.60
1.70
3.30
3.70
0.41
0.55
A
B
C
PAD LAYOUT
INCHES
.200
.055
.080
mm
5.08
1.40
2.03
Copyright
2003
10-31-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
MEMS传感器
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