UVPROM, 32KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | CERAMIC, DIP-28 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 150 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-GDIP-T28 |
| JESD-609代码 | e0 |
| 长度 | 37.215 mm |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | UVPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 32768 words |
| 字数代码 | 32000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 32KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 电源 | 5 V |
| 编程电压 | 12.5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 5.72 mm |
| 最大待机电流 | 0.0003 A |
| 最大压摆率 | 0.05 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 15.24 mm |
| Base Number Matches | 1 |
| 5962-8606305XA | 5962-8606301XA | 5962-8606306XA | 5962-8606306YX | 5962-8606305UX | 5962-8606306XX | 5962-8606306UA | 5962-8606305UA | |
|---|---|---|---|---|---|---|---|---|
| 描述 | UVPROM, 32KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 32KX8, 200ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERDIP-28 | UVPROM, 32KX8, 120ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 32KX8, 120ns, CMOS, CQCC32, WINDOWED, CERAMIC, LLCC-32 | UVPROM, 32KX8, 150ns, CMOS, CDIP28, 0.300 INCH, WINDOWED, THIN, CERDIP-28 | UVPROM, 32KX8, 120ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERDIP-28 | UVPROM, 32KX8, 120ns, CMOS, CDIP28, 0.300 INCH, WINDOWED, THIN, CERDIP-28 | UVPROM, 32KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28 |
| 包装说明 | CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERDIP-28 | CERAMIC, DIP-28 | WINDOWED, CERAMIC, LLCC-32 | 0.300 INCH, WINDOWED, THIN, CERDIP-28 | 0.600 INCH, WINDOWED, CERDIP-28 | 0.300 INCH, WINDOWED, THIN, CERDIP-28 | CERAMIC, DIP-28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最长访问时间 | 150 ns | 200 ns | 120 ns | 120 ns | 150 ns | 120 ns | 120 ns | 150 ns |
| JESD-30 代码 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-CQCC-N32 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| 长度 | 37.215 mm | 37.215 mm | 37.215 mm | 13.97 mm | 37.085 mm | 37.215 mm | 37.085 mm | 37.085 mm |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 32 | 28 | 28 | 28 | 28 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | WDIP | DIP | WQCCN | WDIP | WDIP | WDIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE, WINDOW | IN-LINE | CHIP CARRIER, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.72 mm | 5.72 mm | 5.72 mm | 3.3 mm | 5.08 mm | 5.72 mm | 5.08 mm | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | YES | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 15.24 mm | 15.24 mm | 15.24 mm | 11.43 mm | 7.62 mm | 15.24 mm | 7.62 mm | 7.62 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| JESD-609代码 | e0 | e0 | e0 | - | - | - | e0 | e0 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | - | - | - | 3-STATE | 3-STATE |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped | - | - | - | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped |
| 厂商名称 | - | - | Waferscale Integration Inc | Waferscale Integration Inc | Waferscale Integration Inc | Waferscale Integration Inc | Waferscale Integration Inc | Waferscale Integration Inc |
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