PHOTOTRANSISTOR
KP-2012P3C
WATER CLEAR LENS
Features
!
MECHANICALLY AND SPECTRALLY MATCHED TO
Description
Made with NPN silicon phototransistor chips.
THE KP-2012 SERIES INFRARED EMITTING LED LAMP.
!
WATER
CLEAR LENS.
!
PACKAGE :2000PCS/REEL.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.1(0.004")
unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
SPEC NO: KDA0533
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 1 OF 3
Absolute Maximum Rating at T
)
=25°C
°
Par am et er
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Power Dissipation at (or below) 25
°
C Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Max . Rat in g s
30V
5V
100mW
-40
°
C ~ +85
°C
-40
°
C ~ +85
°C
Electrical And Radiant Characteristics at T
)
=25°C
°
Sy m b o l
V
BR C EO
V
BR EC O
V
CE (SAT)
I
CEO
T
R
T
F
Par am et er
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Collector Dark Current
Rise Time (10% to 90%)
Fall Time (90% to 10%)
Min .
30
5
-
-
-
-
Ty p .
-
-
-
-
3
3
Max .
-
-
0.8
10 0
-
-
Un it
V
V
V
nA
us
us
Tes t Co n d ic t io n
I
C
=100uA
E
e
=0mW/cm
2
I
E
=100uA
E
e
=0mW/cm
2
I
C
=2mA
E
e
=20mW/cm
2
V
CE
=10V
E
e
=0mW/cm
2
V
CE
=5V
I
C
=1mA
R
L
=1000
Ω
I
(ON)
On State Collector Current
0.1
0.3
-
mA
V
CE
=5V
Ee=1mW/cm
2
λ
=940nm
SPEC NO: KDA0533
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 2 OF 3
KP-2012P3C
SMT Reflow Soldering Instructions
Number of reflow process shall be less than 2 times and cooling
process to normal temperature is required between first and
second soldering process.
Recommended Soldering Pattern
(Units : mm)
Tape Specifications
(Units : mm)
SPEC NO: KDA0533
APPROVED:J.LU
REV NO: V.1
CHECKED:
DATE: SEP/17/2001
DRAWN:X.Q.ZHENG
PAGE: 3 OF 3
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