1N4001GP thru 1N4007GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
1.0 A
50 V to 1000 V
30 A
5.0 µA
1.1 V
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
DO-204AL (DO-41)
Features
• Superectifier structure for High Reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, typical I
R
less than 0.1 µA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for both consumer and automotive applications
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak
reverse voltage
* Maximum RMS voltage
* Maximum DC blocking
voltage
* Maximum average forward
rectified current 0.375"
(9.5 mm) lead length
at T
A
= 75 °C
* Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
* Maximum full load reverse
current, full cycle average
0.375" (9.5 mm) lead length
T
A
= 75 °C
* Operating junction and
storage temperature range
Document Number 88504
14-Sep-05
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
30
A
I
R(AV)
30
µA
T
J
, T
STG
- 65 to + 175
°C
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1
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous
forward voltage
* Maximum DC
reverse current
at rated DC
blocking voltage
Typical reverse
recovery time
Typical junction
capacitance
Test condition
at 1.0 A
Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP
V
F
1.1
Unit
V
T
A
=25°C
T
A
= 125 °C
I
R
5.0
50
µA
at I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
t
rr
2.0
µs
C
J
8.0
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
* JEDEC registered values
Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP
R
θJA
R
θJL
55
25
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Average Forward Rectified Current (A)
1.0
30
0.8
Peak Forward Surge Current (A)
60 Hz
Resistive or
Inductive Load
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
25
0.6
20
0.4
15
0.2
0.375" (9.5mm)
Lead Length
0
25
50
75
100
125
150
175
10
0
5.0
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
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2
Document Number 88504
14-Sep-05
1N4001GP thru 1N4007GP
Vishay General Semiconductor
20
20
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
10
1
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
100
T
J
= 100 °C
1
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
0.1
T
J
= 25 °C
1
0.01
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
for suffix “E” part numbers
0.023 (0.58)
Document Number 88504
14-Sep-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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