Ordering number : ENN7912
FW342
N-Channel and P-Channel Silicon MOSFETs
FW342
Features
•
•
General-Purpose Switching Device
Applications
•
For motor drives, inverters.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
duty cycle≤1%
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(1500mm
2
!0.8mm)1unit,
PW≤10s
Mounted on a ceramic board
(1500mm
2
!0.8mm),
PW≤10s
Conditions
N-channel
30
±20
6
7
10
24
1.8
2.2
150
--55 to +150
P-channel
--30
±20
--5
--5.5
--9
--20
Unit
V
V
A
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
ID=3A, VGS=4V
1.2
4.6
7.8
25
35
37
33
49
52
30
1
±10
2.6
V
µA
µA
V
S
mΩ
mΩ
mΩ
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : W342
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004 TS IM TA-101197 No.7912-1/6
FW342
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=-
-1mA, VGS=0
VDS=-
-30V, VGS=0
VGS=±16V, VDS=0
VDS=-
-10V, ID=--1mA
VDS=-
-10V, ID=-
-5A
ID=-
-5A, VGS=-
-10V
ID=-
-3A, VGS=-
-4.5V
ID=-
-3A, VGS=-
-4V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=-
-10V, VGS=--10V, ID=-
-5A
VDS=-
-10V, VGS=--10V, ID=-
-5A
VDS=-
-10V, VGS=--10V, ID=-
-5A
IS=--5A, VGS=0
--30
--1
±10
--1.2
4.5
7.5
41
62
70
1000
195
150
13
82
87
55
16.5
2.5
2.5
-
-0.85
--1.5
53
87
98
--2.6
V
µA
µA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
IS=6A, VGS=0
Ratings
min
typ
850
170
125
12.5
108
77
61
16
3.4
2.4
0.84
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
2129
8
5
0.3
Electrical Connection
8
7
6
5
1.8max
1
5.0
4
0.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
4.4
6.0
Top view
0.595
1.27
0.43
0.1
1.5
No.7912-2/6
FW342
Switching Time Test Circuit
[N-channel]
VIN
10V
0V
VIN
ID=6A
RL=2.5Ω
VDD=15V
0V
--10V
VIN
ID= --5A
RL=3Ω
[P-channel]
VIN
VDD= --15V
D
PW=10µs
D.C.≤1%
VOUT
PW=10µs
D.C.≤1%
D
VOUT
G
G
FW342
P.G
50Ω
FW342
P.G
50Ω
S
S
6.0
ID -- VDS
10.0V
[Nch]
6.0
ID -- VGS
VDS=10V
[Nch]
4.5V
3.5
V
5.0
4.0
V
V
3.0
Drain Current, ID -- A
5.0
Drain Current, ID -- A
4.0
4.0
3.0
6.0V
3.0
2.0
2.0
25
°
C
0
0.5
1.0
1.5
2.0
1.0
1.0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, VDS -- V
100
IT07380
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
70
--25
°
C
VGS=2.5V
Ta=
7
5
°
C
IT07381
[Nch]
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
60
50
40
ID=6A
I D=
=4V
, VGS
3A
ID=3A
30
A
I D=3
=4.5
, VGS
V
20
=10V
A, V GS
I D=6
10
10
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT07382
Ambient Temperature, Ta --
°C
IT07383
No.7912-3/6
FW342
10
y
fs -- ID
VDS=10V
[Nch]
Forward Transfer Admittance,
y
fs -- S
7
5
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
IF -- VSD
[Nch]
VGS=0
3
2
C
5
°
--2
Ta
1.0
7
5
°
C
75
3
0.1
0.01
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
7
5
10
IT07384
7
0
0.2
0.4
Ta=7
5
°
C
25
°
C
0.6
--25
°
C
0.8
°
C
25
=
Forward Current, IF -- A
1.0
1.2
IT07385
SW Time -- ID
[Nch]
VDD=15V
VGS=10V
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[Nch]
f=1MHz
Switching Time, SW Time -- ns
3
2
Ciss, Coss, Crss -- pF
100
7
5
3
2
10
7
5
3
2
0.1
td(off)
1000
7
5
3
2
Ciss
tf
tr
td(on)
Coss
Crss
100
7
5
2
3
5
7
1.0
2
3
5
7
10
2
3
0
5
10
15
20
25
30
IT07387
Drain Current, ID -- A
10
9
IT07386
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
[Nch]
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
[Nch]
≤10µs
10
0
1m
µ
s
s
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=6A
IDP=24A
ID=6A
8
Drain Current, ID -- A
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
10
ms
10
Operation in this area
is limited by RDS(on).
0m
s
DC
10
s
op
era
ti
on
0.01
0.1
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
!0.8mm)
1unit
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Total Gate Charge, Qg -- nC
--5.0
IT07388
ID -- VDS
0V
--10
.
--3
.5V
Drain-to-Source Voltage, VDS -- V
--5
IT07389
[Pch]
ID -- VGS
[Pch]
VDS= --10V
--4
--4.0
V
Drain Current, ID -- A
5V
-
-4.
0V
--3.0
--3.0V
Drain Current, ID -- A
--6.
0
--3
--4
.
--2.0
--2
Ta=7
5
°
C
0
--0.5
--1.0
--1.5
--2.0
--1.0
VGS= --2.5V
--1
0
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
IT07390
Gate-to-Source Voltage, VGS -- V
25
°
C
--25
°
C
IT07391
No.7912-4/6
FW342
140
RDS(on) -- VGS
ID=
--5A
[Pch]
Ta=25°C
140
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
ID=
--3A
100
100
80
80
60
60
40
40
V
=
--4
, VGS
--3A
V
I D=
--4.5
S=
, VG
--3A
I D=
V
=
--10
5A,
V GS
I D=
--
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
20
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
y
fs -- ID
IT07392
Ambient Temperature, Ta --
°C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IT07393
[Pch]
IF -- VSD
[Pch]
VGS=0
Forward Transfer Admittance,
y
fs -- S
VDS= --10V
7
Ta=
75
°
C
25
°
C
--0.4
--0.6
3
2
25
°
C
1.0
7
5
--0.1
2
3
5
7
--1.0
2
3
5
Drain Current, ID -- A
3
2
--10
IT07394
7
--0.01
--0.2
--25
°
C
--0.8
Ta
-25
=-
°
C
75
Forward Current, IF -- A
5
°
C
--1.0
--1.2
IT07395
SW Time -- ID
VDD= --15V
VGS= --10V
td(off)
[Pch]
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[Pch]
f=1MHz
Switching Time, SW Time -- ns
7
5
3
2
Ciss, Coss, Crss -- pF
100
1000
7
5
3
2
Ciss
tf
tr
Coss
Crss
10
7
5
3
--0.1
td(on)
100
7
5
2
3
5
7
--1.0
2
3
5
Drain Current, ID -- A
--10
--9
--10
IT07396
7
0
--5
--10
--15
--20
--25
--30
IT07397
Drain-to-Source Voltage, VDS -- V
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
VGS -- Qg
VDS= --10V
ID= --5A
[Pch]
ASO
IDP= --20A
ID= --5A
≤10µs
10
0
µ
s
1m
s
[Pch]
Gate-to-Source Voltage, VGS -- V
--8
--7
--6
--5
--4
--3
--2
--1
0
0
2
4
6
8
10
12
14
16
18
Drain Current, ID -- A
Operation in this area
is limited by RDS(on).
DC
10
0m
10 s
s
op
era
tio
n
10
ms
--0.01
--0.1
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
!0.8mm)
1unit
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
Total Gate Charge, Qg -- nC
IT07398
Drain-to-Source Voltage, VDS -- V
IT07399
No.7912-5/6
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