Crystal oscillator
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-636 series
Product number (please refer to page 1)
Q33 6 3 6 x x x x x x x 0 0
• A small SMD that enables high-density mounting.
• A general-purpose device with builtin heat-resisting cylindrical AT-cut
crystal and allowing almost the same temperature condition for soldering
as SMD IC.
• Low current consumption by output enable function(OE) or standby
function(ST).
Actual size
Specifications (characteristics)
Item
Output frequency range
Symbol
f
0
SG-636PTF
2.21675 MHz to
41.0000 MHz
Specifications
SG-636PH
SG-636SCE/PCE
41.0001
MHz
to
2.21675 MHz to
70.0000
MHz
40.0000 MHz
-0.5 V to +7.0 V
3.3 V ±0.3 V
-55 °C to +100 °C
-20 °C to +70 °C
C: ±100 x 10
-6
SG-636PDE
2.21675MHz to
40.0000MHz
2.5 V ±0.25 V
Remarks
Refer to page 31. "Frequency range"
Power source
Max. supply voltage V
DD
-GND
voltage
Operating voltage
V
DD
Temperature
Storage temperature
T
STG
range
Operating temperature
T
OPR
Frequency stability
∆f/f
0
Current consumption
lop
Output disable current
I
OE
Duty
Output voltage
Output load condition
CMOS level
(fan out)
TTL level
CMOS level
TTL level
t
w
/t
V
OH
V
OL
C
L
N
V
IH
V
IL
t
TLH
t
THL
tosc
fa
S.R.
5.0 V ±0.5 V
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
5 mA Max.
3 mA Max.
17 mA Max.
10 mA Max.
45 % to 55 %
35 mA Max.
20 mA Max.
9 mA Max.
5 mA Max.
—
40 % to 60 %
V
DD
-0.4 V Min.
0.4 V Max.
50 pF Max.
10 TTL Max.
20 pF Max.(
≤
55 MHz)
15 pF Max.( > 55 MHz)
45 % to 55 %
No load condition
OE=GND, ST=GND 2 µA Max.(SCE)
CMOS load: 1/2 V
DD
level
TTL load: 1.4 V level
I
OH
=-8 mA (PTF) /-4 mA (PH / SCE / PCE / PDE)
I
OL
=16 mA (PTF) /4 mA (PH / SCE / PCE / PDE)
30 pF Max.
—
15 pF Max.
C
L
<
15 pF
_
5 LSTTL Max.
Output enable/disable input voltage
Output rise time
Output fall time
CMOS level
TTL level
CMOS level
TTL level
2.0 V Min.
0.8 V Max.
7 ns Max.
5 ns Max.
7 ns Max.
5 ns Max.
4 ms Max.
—
5 ns Max.
—
5 ns Max.
0.8 V
DD
Min.
0.2 V
DD
Max.
OE,ST (SCE)
CMOS load: 20 %→80 % V
DD
TTL load: 0.4 V→2.4 V
CMOS load: 80 %→20 % V
DD
TTL load: 2.4 V→0.4 V
Oscillation start up time
Aging
Shock resistance
10 ms Max.
±5 x 10
-6
/year Max.
4 ms Max.
Time at minimum operating voltage to be O s
Ta=+25 °C,V
DD
=5.0 V / 3.3 V / 2.5 V,first year
Three drops on a hard board from 750 mm or excitation test
with 29400 m/s
2
x 0.3 ms x 1/2 sine wave in 3 directions
±20 x 10
-6
Max.
Note: • Unless otherwise stated,characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is required.
External dimensions
10.5 Max.
#4
#3
(Unit: mm)
Recommended soldering pattern
1.3
(Unit: mm)
NO.
5.8 Max.
1
2
3
4
Pin terminal
OE or ST
GND
OUT
V
DD
E 18.4320C
PTF9352A
#1
#2
5.0
0.05 Min.
0.5
5.08
Note.
OE Pin (PTF, PH, PCE, PDE, PTW, PHW, PCW)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
2.7 Max.
(1.0)
3.6
(1.0)
5.08
Metal may be exposed on the top or bottom of this product.
This won't affect any quality, reliability or electrical spec.
ST pin (SCE)
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is high impedance., oscillation stops.
ST pin - "L" : Output is low level (weak pull - down), oscillation stops.
41
4.6
2.1
Crystal oscillator
Specifications (characteristics)
Item
Symbol
Specifications
Output frequency range
f
O
Max. supply voltage
V
DD-
GND
Power source
Operating voltage
V
DD
voltage
Storage temperature
T
STG
Temperature
Operating temperature
T
OPR
range
∆f/f
0
Frequency stability
I
OP
Current consumption
I
OE
Output disable current
I
ST
Standby current
Duty
CMOS level
TTL level
tw/t
V
OH
Output voltage
V
OL
Output load condition (fan out)
Output enable
CMOS level
disable input voltage
TTL level
CMOS level
CL
V
IH
V
IL
t
TLH
Output rise time
TTL level
CMOS level
Output fall time
TTL level
t
THL
t
OSC
fa
S.R.
Oscillation start up time
Aging
Shock resistance
SG-636PHG
SG-636PCG/SCG
2.21675 MHz to 33.0000 MHz
-0.5 V to +7.0 V
4.5 V to 5.5 V
2.7 V to 3.6 V
-55
°C
to +100
°C
-20
°C
to +70
°C
B :
±50
x 10
-6
C :
±100
x 10
-6
25 mA Max.
12 mA Max.
20 mA Max.
10 mA Max.
—
50
µA
Max.
—
45 % to 55 %
40 % to 60 %
—
2.4 V Min.
—
V
DD
-0.4 V Min.
—
V
DD
-0.4 V Max.
—
—
0.4 V Max.
0.4 V Max.
—
25 pF
2.0 V Min.
70 % V
DD
Min.
0.8 V Max.
20 % V
DD
Max.
—
3.4 ns Max.
4.0 ns Max.
1.2 ns Max.
—
—
2.4 ns Max.
—
—
—
3.4 ns Max.
4.0 ns Max.
1.2 ns Max.
—
—
2.4 ns Max.
—
—
12 ms Max.
±5
x 10
-6
/year Max.
±20
x 10
-6
Max.
SG-636PTG
Remarks
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
-20
°C
to +70
°C
No load condition
OE=GND (P∗G)
ST=GND (SCG)
50 % V
DD
, CL = 25 pF
1.4 V Level, CL = 25 pF
I
OH
= -8 mA
I
OH
= -16 mA
I
OL
= 8 mA
I
OL
= 16 mA
OE, ST
OE, ST
20 % to 80 % V
DD
, CL
≤
25 pF
0.8 V to 2.0 V CL
≤
25 pF
0.4 V to 2.4 V CL
≤
25 pF
80 % to 20 % V
DD
CL
≤
25 pF
2.0 V to 0.8 V CL
≤
25 pF
2.4 V to 0.4 V CL
≤
25 pF
Time at minimum operating voltage to be 0 s
Ta=+25
°C,
V
DD
=5.0 V / 3.3 V, First year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
Specifications (characteristics)
Item
Symbol
Specifications
Output frequency range
f
O
Max. supply voltage
V
DD-
GND
Power source
Operating voltage
V
DD
voltage
Storage temperature
T
STG
Temperature
Operating temperature
T
OPR
range
∆f/f0
Frequency stability
I
OP
Current consumption
I
OE
Output disable current
I
ST
Standby current
Duty
tw/t
V
OH
V
OL
Output voltage
Output load condition (fan out)
CL
Output enable disable input voltage
V
IH
V
IL
Output rise time
t
TLH
Output fall time
t
THL
Oscillation start up time
Aging
Shock resistance
t
OSC
fa
S.R.
SG-636PTW/STW
SG-636PHW/SHW
SG-636PCW/SCW
32.0001 MHz to 135.0000 MHz
-0.5 V to +7.0 V
5.0 V
±
0.5 V
3.3 V
±
0.3 V
-55
°C
to +100
°C
-20
°C
to +70
°C
B :
±50
x 10
-6
C :
±100
x 10
-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50
µA
Max.
40 % to 60 %
—
—
45 % to 55 %
—
—
—
40 % to 60 %
40 % to 60 %
—
45 % to 55%
—
V
DD
-0.4 V Min.
0.4 V Max.
15 pF
—
—
5 TTL + 15 pF
—
—
25 pF
—
—
—
15 pF
15 pF
—
25 pF
—
—
50 pF
—
2.0 V Min.
70 % V
DD
Min.
0.8 V Max.
20 % V
DD
Max.
2.0 ns Max.
—
—
4.0 ns Max.
—
—
—
3.0 ns Max.
—
—
4.0 ns Max.
—
—
—
3.0 ns Max.
2.0 ns Max.
—
—
4.0 ns Max.
—
—
—
3.0 ns Max.
—
—
4.0 ns Max.
—
—
—
3.0 ns Max.
10 ms Max.
±5
x 10
-6
/year Max.
±20
x 10
-6
Max.
Remarks
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
No load condition
OE=GND(P∗W)
ST=GND(S∗W)
TTL load : 1.4 V, CL = Max.
TTL load : 1.4 V, 5TTL + 15 pF, fo
≤
66.6667 MHz
CMOS load : 50% V
DD
, CL = Max.
CMOS load : 50% V
DD
, CL = 25 pF, fo
≤
66.6667 MHz
I
OH
= -16 mA (∗TW/HW)/-8 mA(∗CW)
I
OL
= 16 mA (∗TW/HW)/8 mA(∗CW)
fo
≤
135 MHz
fo
≤
90 MHz
fo
≤
66.6667 MHz
fo
≤
135 MHz
fo
≤
90 MHz
fo
≤
66.6667MHz
OE,ST
OE,ST
TTL load: 0.8 V→2.0 V, CL = Max.
TTL load: 0.4 V→2.4 V, CL = Max.
CMOS load: 20 %→80 % V
DD
, CL= 25 pF
CMOS load: 20 %→80 % V
DD
, CL= 50 pF
CMOS load: 20 %→80 % V
DD
, CL= 15 pF
TTL load: 2.0 V→0.8 V, CL = Max.
TTL load: 2.4 V→0.4V, CL = Max.
CMOS load: 80 %→20 % V
DD
, CL= 25 pF
CMOS load: 80 %→20 % V
DD
, CL= 50 pF
CMOS load: 80 %→20 % V
DD
, CL= 15 pF
Time at minimum operating voltage to be 0 s
Ta=+25
°C,
VDD =5.0 V / 3.3 V, first year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
42
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