ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available
in
uni-directional
and
bi-directional
• 1500 W peak pulse power capability
with a 10/1000 μs waveform, repetitive
rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade
Product requirements at:
www.vishay.com/applications
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
T
J
max.
5.0 V to 18 V
1500 W
6.5 W
200 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
(2)
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA)
(T
A
= 25 °C unless otherwise noted)
JEDEC
TYPE NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
V
WM
(V)
MINIMUM
BREAKDOWN
VOLTAGE
AT 1.0 mA
V
BR
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
MAXIMUM
CLAMPING
VOLTAGE
AT I
PP
= 1.0 A
V
C
(V)
MAXIMUM
CLAMPING
VOLTAGE AT
I
PP
= 10 A
V
C
(V)
MAXIMUM
PEAK
PULSE
CURRENT
I
PP
(A)
UNI-DIRECTIONAL TYPES
1N6373
(2)
1N6374
1N6375
1N6376
1N6377
1N6378
ICTE5
(2)
ICTE8
ICTE10
ICTE12
ICTE15
ICTE18
5.0
8.0
10.0
12.0
15.0
18.0
6.0
9.4
11.7
14.1
17.6
21.2
300
25.0
2.0
2.0
2.0
2.0
7.1
11.3
13.7
16.1
20.1
24.2
7.5
11.5
14.1
16.5
20.6
25.2
160
100
90
70
60
50
BI-DIRECTIONAL TYPES
1N6382
1N6383
1N6384
1N6385
1N6386
Notes
(1)
(2)
(3)
ICTE8C
ICTE10C
ICTE12C
ICTE15C
ICTE18C
8.0
10.0
12.0
15.0
18.0
9.4
11.7
14.1
17.6
21.2
50.0
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
11.6
14.5
17.1
21.4
25.5
100
90
70
60
50
“C” suffix indicates bi-directional
ICTE5 and 1N6373 are not available as bi-directional
Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual V
C
(clamping voltage) to the V
BR
(breakdown voltage) as measured on a specific device
ORDERING INFORMATION
(Example)
PREFERRED P/N
ICTE5-E3/54
ICTE5HE3/54
(1)
Note
(1)
UNIT WEIGHT (g)
0.968
0.968
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Automotive grade
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88356
Revision: 07-May-10
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
100 000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
10
Measured at
Zero Bias
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
1000
Measured at Stand-Off
Voltage V
WM
0.1
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
100
1.0
10
100
200
t
d
- Pulse Width (s)
V
BR
- Breakdown Voltage (V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance Uni-Directional
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100 000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
Bi-Directional Type
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
50
1000
25
Measured at Stand-Off
Voltage V
WM
100
1.0
10
100
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
V
BR
- Breakdown Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 5. Typical Junction Capacitance
I
FSM
- Peak Forward Surge Current (A)
150
I
PPM
- Peak Pulse Current, % I
RSM
t
r
= 10 μs
Peak Value
I
PPM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
200
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
100
100
Half Value - I
PP
I
PPM
2
50
10/1000 μs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
50
10
1
5
10
50
100
t - Time (ms)
Number of Cycles at 60 Hz
Figure 3. Pulse Waveform
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
50
Uni-Directional Only
T
A
= 25 °C
8.0
7.0
I
PP
- Peak Pulse Current (A)
P
D
- Power Dissipation (W)
6.0
5.0
4.0
3.0
2.0
1.0
L = 0.375" (9.5 mm)
Lead Lengths
10
ICTE10
ICTE12
ICTE15
ICTE18
ICTE5
ICTE8
1
6
8
10
12
14
16
18
20
22
24
26
28
0
0
25
50
75
100
125
150
175
200
V
C
- Clamping Voltage (V)
T
L
- Lead Temperature (°C)
Figure 7. Typical Characteristics Clamping Voltage
Figure 8. Power Derating Curve
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style 1.5KE
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88356
Revision: 07-May-10
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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