DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
KMM372F213CK/CS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
9
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*1 : V
CC
+1.3V/15ns, Pulse width is measured at V
CC
.
*2 : -1.3V/15ns, Pulse width is measured at V
SS
.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM372F213CK/CS
Min
-
-
Max
990
900
100
990
900
810
720
30
990
900
25
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-25
-5
2.4
-
I
CC1
* : Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
* : EDO Mode Current * (RAS=V
IL
, CAS cycling :
t
HPC
=min)
I
CC5
: Standby Current (RAS=CAS=W=Vcc-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I
I(L)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.3V,
all other pins not under test=0 V)
I
O(L)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL
: Output Low Voltage Level (I
OL
= 2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one hyper page mode cycle,
t
HPC
.
DRAM MODULE
CAPACITANCE
(T
A
= 25°C, Vcc=3.3V, f = 1MHz)
Item
Input capacitance[A0-A10, B0]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0, RAS2]
Input capacitance[CAS0, CAS4]
Input/Output capacitance[DQ0 - 71]
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ1
Min
-
-
-
-
-
KMM372F213CK/CS
Max
20
20
45
20
20
Unit
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=3.3V±0.3V. See notes 1,2.)
Test condition : V
ih
/V
il
=2.0/0.8V, V
oh
/V
ol
=2.0/0.8V, Output loading CL=100pF
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
OE to output in Low-Z
Output buffer turn-off delay from CAS
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Refresh period(2K Ref.)
Write command set-up time
CAS to W delay time
RAS to W delay time
Symbol
Min
-5
Max
Min
104
155
50
18
30
8
8
8
2
30
50
18
36
8
18
13
10
5
8
0
8
30
0
0
-2
10
10
18
8
-2
13
32
0
36
71
0
40
83
10K
32
20
10K
18
50
8
8
8
2
40
60
20
43
10
18
13
10
5
8
0
10
35
0
0
-2
10
10
20
10
-2
15
32
10K
40
25
10K
20
50
60
20
35
84
131
-6
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
7
7
7,14
9,14
9,14
14
8
8,14
14
14
14
13
4,14
10,14
14
14
14
3,4,10
3,4,5,14
3,10,14
3,14
3,14
6,11,12,14
2
Unit
Note
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OLZ
t
CEZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CWD
t
RWD
DRAM MODULE
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=3.3V±0.3V. See notes 1,2.)
Test condition : V
ih
/V
il
=2.0/0.8V, V
oh
/V
ol
=2.0/0.8V, Output loading CL=100pF
Parameter
Column address to W delay time
CAS precharge time to W delay time
CAS set-up time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper page cycle time
Hyper page read-modify-write cycle time
CAS precharge time(Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
Output data hold time
Output buffer turn off delay time from RAS
Output buffer turn off delay time from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width(Hyper page cycle)
Present Detect Read Cycle
PDE to Valid PD bit
PDE to PD bit Inactive
Symbol
-5
Min
48
53
5
8
3
33
20
68
8
50
35
18
18
5
13
15
8
10
3
3
20
5
5
5
5
13
18
18
20
5
15
15
8
10
3
3
20
5
5
5
5
200K
25
77
10
60
40
Max
Min
55
60
5
8
3
KMM372F213CK/CS
-6
Max
Unit
ns
ns
ns
ns
ns
Note
7
14
14
14
3,14
12
12
t
AWD
t
CPWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
OEZ
t
OEH
t
WRP
t
WRH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
40
ns
ns
ns
ns
200K
20
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
14
14
14
6.11.12
6.11.14
14
14
14
14
6,11,14
15
20
ns
ns
ns
ns
ns
ns
ns
t
PD
t
PDOFF
10
2
7
2
10
7
ns
ns
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