DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
D
I
OS
KMM372V160(8)0BK/BS
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +125
18
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
*2
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Unit
V
V
V
V
*1 : V
CC
+1.3V at pulse width≤15ns, which is measured at V
CC
.
*2 : -1.3V at pulse width≤15ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speedl
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM372V1600BK/BS
Min
-
-
KMM372V1680BK/BS
Min
-
-
-
-
-
-
-
-
-
-10
-5
2.4
-
Max
1620
1440
100
1620
1440
1080
900
30
1620
1440
10
5
-
0.4
Max
2160
1980
100
2160
1980
1260
1080
30
2160
1980
10
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-10
-5
2.4
-
I
CC1
* : Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
* : Fast Page Mode Current * (RAS=V
IL
, CAS cycling :
t
PC
=min)
I
CC5
: Standby Current (RAS=CAS=W=Vcc-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I(
IL)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.3V,
all other pins not under test=0 V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
V
OH
: Output High Voltage Level (I
OH
= -2mA)
V
OL
: Output Low Voltage Level (I
OL
= 2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Fast page mode cycle time,
t
PC
.
DRAM MODULE
CAPACITANCE
(T
A
= 25°C, f = 1MHz)
Item
Input capacitance[A0, B0, A1 - A12]
Input capacitance[W0, W2, OE0, OE2]
Input capacitance[RAS0, RAS2]
Input capacitance[CAS0, CAS4]
Input/Output capacitance[DQ0 - 71]
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Min
-
-
-
-
-
KMM372V160(8)0BK/BS
Max
20
20
73
20
17
Unit
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=3.3V±0.3V. See notes 1,2.)
Test condition : V
ih
/V
il
=2.2/0.7V, V
oh
/V
ol
=2.0/0.8V, output loading CL=100pF
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referencde to CAS
Read command hold referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data in set-up time
Data in hold time
Refresh period(4K & 8K)
Write command set-up time
CAS to W delaly time
Column address to W delay time
CAS prechange to W delay time
RAS ro W delay time
Symbol
-5
Min
90
133
50
18
30
5
5
1
30
50
18
48
13
18
13
10
5
8
0
10
30
0
0
-2
10
10
20
13
-2
15
64
0
36
48
53
71
0
40
55
60
83
10K
32
20
10K
18
50
5
5
1
40
60
20
58
15
18
13
10
5
8
0
10
35
0
0
-2
10
10
20
15
-2
15
64
10K
40
25
10K
20
50
Max
Min
110
155
60
20
35
-6
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
7
7
7
7
7,11
9,11
9,11
11
8
8,11
11
4,11
10,11
11
11
11
11
11
3,4,10
3,4,5,11
3,10,11
3,11
6,11
2
Note
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CWD
t
AWD
t
CPWD
t
RWD
DRAM MODULE
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=3.3V±0.3V. See notes 1,2.)
Parameter
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Fast page mode cycle time
Fast page mode read-modify-write cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Present Detect Read Cycle
PDE to Valid PD bit
PDE to PD bit Inactive
Symbol
-5
Min
10
8
3
40
35
85
10
50
35
15
8
18
18
5
13
18
200K
Max
KMM372V160(8)0BK/BS
-6
Min
10
8
3
35
40
76
10
60
40
15
8
20
20
5
15
20
200K
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
11
11
11
11
11
11
Note
11
11
11
3,11
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
t
WRP
t
WRH
t
OEA
t
OED
t
OEZ
t
OEH
t
PD
t
PDOFF
10
2
7
2
10
7
ns
ns
NOTES
1. An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
2. Input voltage levels are V
ih
/V
il
. V
IH
(min) and V
IL
(max) are ref-
erence levels for measuring timing of input signals. Transi-
tion times are measured between V
IH
(min) and V
IL
(max) and
are assumed to be 5ns for all inputs.
3. Measured with a load equivalent to 1 TTL loads and 100pF.
4. Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
5. Assumes tha
t
RCD
≥
t
RCD
(max).
6. This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or
V
OL
.
7.
t
WCS
,
t
RWD
,
t
CWD
,
t
AWD
and
t
CPWD
are not restrictive operat-
ing parameter. They are included in the data sheet as electri-
cal characteristics only. If
t
WCS
≥
t
WCS
(min) the cycle is an
early write cycle and the data out pin will remain high imped-
ance for the duration of the cycle. If
t
RWD
≥
t
RWD
(min),
t
CWD
≥
t
CWD
(min),
t
AWD
≥
t
AWD
(min) and
t
CPWD
≥
t
CPWD
(min).
The cycle is a read-modify-write cycle and the data out will
contain data read from the selected cell. If neither of the
above sets of conditions is satisfied, the condition of data
out(at access time) is indeterminate.
8. Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
9. These parameters are referenced to the CAS leading edge in
early write cycles.
10. Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit, then
access time is controlled by
t
AA
.
11. The timing skew from the DRAM to the DIMM resulted from
the addition of buffers.
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