DRAM MODULE
KMM5328000CK/CKG
KMM5328100CK/CKG
KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM53280(1)00CK is a 8Mx32bits Dynamic
RAM high density memory module. The Samsung
KMM53280(1)00CK consists of sixteen CMOS 4Mx4bits
DRAMs in 24-pin SOJ package mounted on a 72-pin glass-
epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is
mounted on the printed circuit board for each DRAM. The
KMM53280(1)00CK is a Single In-line Memory Module with
edge connections and is intended for mounting into 72 pin
edge connector sockets.
FEATURES
• Part Identification
- KMM5328000CK(4096 cycles/64ms Ref, SOJ, Solder)
- KMM5328000CKG(4096 cycles/64ms Ref, SOJ, Gold)
- KMM5328100CK(2048 cycles/32ms Ref, SOJ, Solder)
- KMM5328100CKG(2048 cycles/32ms Ref, SOJ, Gold)
• Fast Page Mode Operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDPin & pinout
• PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
A11
Vcc
A8
A9
RAS1
RAS0
NC
NC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
NC
NC
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
Vss
PIN NAMES
Pin Name
A0 - A11
A0 - A10
DQ0 - DQ31
W
RAS0, RAS1
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Function
Address Inputs(4K Ref)
Address Inputs(2K Ref)
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
50NS
NC
Vss
Vss
Vss
60NS
NC
Vss
NC
NC
* Pin connection changing available
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
* NOTE : A11 is used for only KMM5328000CK/CKG (4K ref.)
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
CAS0
DQ1
CAS
U0
DQ2
RAS
DQ3
A0-
OE
W
A11(A10) DQ4
CAS
RAS
OE
DQ1
U1
DQ2
DQ3
A0-
A11(A10) DQ4
W
DQ0-DQ3
KMM5328000CK/CKG
KMM5328100CK/CKG
RAS0
DQ1
DQ2
U8
DQ3
A0-
DQ4A11(A10)
DQ1
U9
DQ2
DQ3
A0-
DQ4A11(A10)
W
CAS
RAS
OE
RAS1
DQ4-DQ7
W
CAS
RAS
OE
CAS1
DQ1
CAS
U2
DQ2
RAS
DQ3
A0-
OE
W
A11(A10) DQ4
DQ1
CAS
U3
DQ2
RAS
DQ3
A0-
OE
W
A11(A10) DQ4
CAS2
CAS
RAS
OE
DQ1
U4
DQ2
DQ3
A0-
W
A11(A10) DQ4
DQ8-DQ11
DQ1
U10
DQ2
DQ3
A0-
DQ4A11(A10) W
DQ1
U11
DQ2
DQ3
A0-
DQ4A11(A10) W
CAS
RAS
OE
DQ12-DQ15
CAS
RAS
OE
DQ16-DQ19
DQ1
U12
DQ2
DQ3
A0-
DQ4A11(A10) W
DQ1
U13
DQ2
DQ3
A0-
DQ4A11(A10) W
CAS
RAS
OE
DQ1
CAS
U5
DQ2
RAS
DQ3
A0-
OE
W
A11(A10) DQ4
CAS3
DQ1
CAS
U6
DQ2
RAS
DQ3
A0-
OE
W
A11(A10) DQ4
CAS
RAS
OE
W
A0-A11(A10)
Vcc
DQ1
U7
DQ2
DQ3
A0-
W
A11(A10) DQ4
DQ20-DQ23
CAS
RAS
OE
DQ24-DQ27
DQ1
U14
DQ2
DQ3
A0-
DQ4A11(A10) W
DQ1
U15
DQ2
DQ3
A0-
DQ4A11(A10) W
CAS
RAS
OE
DQ28-DQ31
CAS
RAS
OE
.1 or .22uF Capacitor
for each DRAM
Vss
To all DRAMs
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
KMM5328000CK/CKG
KMM5328100CK/CKG
Rating
-1 to +7.0
-1 to +7.0
-55 to +150
16
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*1 : V
CC
+2.0V/20ns, Pulse width is measured at V
CC
.
*2 : -2.0V/20ns, Pulse width is measured at V
SS
.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1
*1
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM5328000CK/CKG
Min
-
-
KMM5328100CK/CKG
Min
-
-
Max
736
656
32
736
656
656
576
16
736
656
80
10
-
0.4
Max
896
816
32
896
816
736
656
16
896
816
80
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-80
-10
2.4
-
-
-
-
-
-
-
-
-
-80
-10
2.4
-
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
: Standby Current (RAS=CAS=W=V
IH
)
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
: Fast Page Mode Current * (RAS=V
IL
, CAS Address cycling :
t
PC
=min)
: Standby Current (RAS=CAS=W=Vcc-0.2V)
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.5V,
all other pins not under test=0 V)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
: Output High Voltage Level (I
OH
= -5mA)
: Output Low Voltage Level (I
OL
= 4.2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one page mode cycle,
t
PC
.
DRAM MODULE
CAPACITANCE
(T
A
= 25
¡É
, V
CC
=5V, f = 1MHz)
Item
Input capacitance[A0-A11(A10)]
Input capacitance[W]
Input capacitance[RAS0, RAS1]
Input capacitance[CAS0 - CAS3]
Input/Output capacitance[DQ0-31]
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Min
-
-
-
-
-
KMM5328000CK/CKG
KMM5328100CK/CKG
Max
100
130
70
30
20
Unit
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=5.0V±10%. See notes 1,2.)
Test condition : V
ih
/V
il
=2.4/0.8V, V
oh
/V
ol
=2.4/0.4V, Output loading CL=100pF
Parameter
Random read or write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in set-up time
Data-in hold time
Refresh period (4K Ref)
Refresh period (2K Ref)
Write command set-up time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS precharge to CAS hold time
Symbol
-5
Min
90
50
13
25
0
0
3
30
50
13
50
13
20
15
5
0
10
0
10
25
0
0
0
10
10
13
13
0
10
64
32
0
5
10
5
0
5
10
5
10K
37
25
10K
13
50
0
0
3
40
60
15
60
15
20
15
5
0
10
0
10
30
0
0
0
10
10
15
15
0
15
64
32
10K
45
30
10K
15
50
Max
Min
110
60
15
30
-6
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
7
9
9
8
8
4
10
3,4
3,4,5
3,10
3
6
2
Note
t
RC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
REF
t
WCS
t
CSR
t
CHR
t
RPC
DRAM MODULE
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=5.0V±10%. See notes 1,2.)
Test condition : V
ih
/V
il
=2.4/0.8V, V
oh
/V
ol
=2.4/0.4V, Output loading CL=100pF
Parameter
Access time from CAS precharge
Fast page mode cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
CAS precharge(C-B-R counter test)
Symbol
-5
Min
35
10
50
10
10
20
200K
Max
30
KMM5328000CK/CKG
KMM5328100CK/CKG
-6
Min
40
10
60
10
10
20
200K
Max
35
Unit
ns
ns
ns
ns
ns
ns
ns
Note
3
t
CPA
t
PC
t
CP
t
RASP
t
WRP
t
WRH
t
CPT
NOTES
1. An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
2. V
IH
(min) and V
IL
(max) are reference levels for measuring
timing of input signals. Transition times are measured
between V
IH
(min) and V
IL
(max) and are assumed to be 5ns
for all inputs.
3. Measured with a load equivalent to 2 TTL loads and 100pF.
4. Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
5. Assumes that
t
RCD
≥
t
RCD
(max).
6. This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or
V
OL
.
7.
t
WCS
is non-restrictive operating parameter. It is included in
the data sheet as electrical characteristics only. If
t
WCS
≥
t
WCS
(min), the cycle is an early write cycle and the
data out pin will remain high impedance for the duration of
the cycle.
8. Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
9. These parameter are referenced to the CAS leading edge in
early write cycles.
10. Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit, then
access time is controlled by
t
AA
.
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