Silicon Piezoresistive
Relative Pressure Sensor
KPY 32-R
Features
•
•
•
•
Low pressure and temperature hysteresis
Fast response
High sensitivity and linearity
Fatigue free monocrystaline silicon diaphragm
giving high load cycle stability
• High long term stability
• Metal housing
Similar to TO-8
Type and
Marking
KPY 32-R
Symbol
Pressure
Range
0
…
0.06
Unit
bar
Ordering Code
Q62705-K150
P
0
…
P
N
Pin Configuration
1
2
3
4
5
6
7
8
−
V
IN
−
V
OUT
Not connected
Temperature sensor
Temperature sensor
Shielding, to be connected
to
+
V
IN
+
V
IN
+
V
OUT
Semiconductor Group
1
02.97
KPY 32-R
Absolute Maximum Ratings
Parameter
Pressure overload
Operating temperature range
Storage temperature range
Supply voltage
Symbol
Limit Values
0.6
−
40
… +
125
−
50
… +
150
12
Unit
bar
˚C
˚C
V
P
MAX
T
A
T
stg
V
IN
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Bridge resistance
Sensitivity
Output voltage
Offset voltage
P
=
P
0
Linearity error (Best fit straight line)
P
=
P
0
...
P
N
Pressure hysteresis
P
1
=
P
0
,
P
2
=
P
N
,
P
3
=
P
0
Symbol
min.
Limit Values
typ.
−
220.0
66.0
-
±
0.3
±
0.1
max.
8
−
−
+
25
%
V
fin
-
%
V
fin
-
kΩ
mV/Vbar
mV
mV
−
25
-
4
100.0
30.0
Unit
R
B
s
V
fin
V
0
F
L
P
H
-
Electrical Characteristics
at
T
1
= 25 ˚C,
T
2
= 125 ˚C,
T
3
= 25 ˚C and
V
IN
= 5 V, unless otherwise specified.
Parameter
Temperature coefficient of
V
fin
Temperature coefficient of
V
0
Temperature coefficient of
R
B
Temperature hysteresis of
V
0
;
V
fin
Symbol
min.
Limit Values
typ.
-
-
max.
%/K
−
0.19
−
0.06
-
−
0.10
%/K
+ 0.06
%/K
+ 0.095 -
±
0.2
+
0.7
% v.
V
fin
Unit
TC
Vfin
TC
V0
TC
RB
TH
−
0.7
Semiconductor Group
2
测试/测量
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