Silicon Piezoresistive
Relative Pressure Sensor
KPY 33-RK
Features
•
•
•
•
Low pressure and temperature hysteresis
Fast response
High sensitivity and linearity
Fatigue free monocrystaline silicon diaphragm
giving high load cycle stability
• High long term stability
• Provided for further fabrication, protection cap
TO-8-2
Type and
Marking
KPY 33-RK
Symbol
Pressure
Range
0
…
0.1
Unit
bar
Ordering Code
Q62705-K274
P
0
…
P
N
Pin Configuration
1
2
3
4
5
6
7
8
+ V
OUT
+
V
IN
Not connected
Temperature sensor
(typ.
R
25
= 2 kΩ)
Temperature sensor
Shielding, to be connected
to
+
V
IN
−
V
OUT
−
V
IN
Semiconductor Group
1
02.97
KPY 33-RK
Absolute Maximum Ratings
Parameter
Pressure overload
Operating temperature range
Storage temperature range
Supply voltage
..
Symbol
Limit Values
1.0
−
40
… +
125
−
50
… +
150
12
Unit
bar
˚C
˚C
V
P
MAX
T
A
T
stg
V
IN
Electrical Characteristics
at
T
A
= 25 ˚C and
V
IN
= 5 V, unless otherwise specified
Parameter
Bridge resistance
Sensitivity
Output voltage
Offset voltage
P
=
P
0
Linearity error (Best fit straight line)
P
=
P
0
...
P
N
Pressure hysteresis
P
1
=
P
0
,
P
2
=
P
N
,
P
3
=
P
0
Symbol
min.
Limit Values
typ.
−
80.0
40.0
−
±
0.2
±
0.1
max.
8
−
−
+
25
±
0.5
−
%
V
fin
%
V
fin
kΩ
mV/Vbar
mV
mV
−
25
−
−
4
56.0
28.0
Unit
R
B
s
V
fin
V
0
F
L
P
H
Electrical Characteristics
at
T
1
= 25 ˚C,
T
s
= 125 ˚C,
T
3
= 25 ˚C and
V
fin
= 5 V, unless otherwise specified
Parameter
Temperature coefficient of
V
fin
Temperature coefficient of
V
0
Temperature coefficient of
R
B
Temperature hysteresis of
V
0
;
V
fin
Symbol
min.
Limit Values
typ.
−
−
max.
%/K
−
0.19
−
0.05
−
−
0.7
−
0.10
%/K
+ 0.05
%/K
+ 0.095
−
±
0.1
+
0.7
% v.
V
fin
Unit
TC
Vfin
TC
V0
TC
RB
TH
Semiconductor Group
2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
