EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
参数名称 | 属性值 |
厂商名称 | KEC |
零件包装代码 | TO-92M |
包装说明 | CYLINDRICAL, R-PBCY-T3 |
针数 | 3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC) | 0.8 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 33 |
JESD-30 代码 | R-PBCY-T3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | CYLINDRICAL |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 200 MHz |
KRC241M | KRC246M | KRC245M | KRC242M | KRC244M | KRC243M | |
---|---|---|---|---|---|---|
描述 | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
厂商名称 | KEC | KEC | KEC | KEC | KEC | KEC |
零件包装代码 | TO-92M | TO-92M | TO-92M | TO-92M | TO-92M | TO-92M |
包装说明 | CYLINDRICAL, R-PBCY-T3 | CYLINDRICAL, R-PBCY-T3 | CYLINDRICAL, R-PBCY-T3 | CYLINDRICAL, R-PBCY-T3 | CYLINDRICAL, R-PBCY-T3 | CYLINDRICAL, R-PBCY-T3 |
针数 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknown | unknown | unknow | unknown | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 4.55 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC) | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A |
集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 33 | 56 | 56 | 39 | 56 | 47 |
JESD-30 代码 | R-PBCY-T3 | R-PBCY-T3 | R-PBCY-T3 | R-PBCY-T3 | R-PBCY-T3 | R-PBCY-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
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