Freescale Semiconductor
Technical Data
Document Number: MRF6S19060N
Rev. 5, 12/2010
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for N--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
•
Typical 2--Carrier N--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 610 mA,
P
out
= 12 Watts Avg., f = 1930 MHz, IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — --51 dBc in 30 kHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
225_C Capable Plastic Package
•
N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MRF6S19060NR1
MRF6S19060NBR1
1930-
-1990 MHz, 12 W AVG., 28 V
2 x N-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6S19060NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6S19060NBR1
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 60 W CW
Case Temperature 79°C, 12 W CW
Symbol
R
θJC
Value
(2,3)
0.84
1.0
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved.
MRF6S19060NR1 MRF6S19060NBR1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
RF Power Field Effect Transistors
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 610 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.0 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2
0.2
2.2
2.8
0.3
2.5
4
0.4
Vdc
Vdc
Vdc
Dynamic Characteristics
(1)
C
rss
—
1.5
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 610 mA, P
out
= 12 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
η
D
IM3
ACPR
IRL
14.5
24.5
—
—
—
16
26
--37
--51
--12
18.5
—
--35
--48
--10
dB
%
dBc
dBc
dB
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S19060NR1 MRF6S19060NBR1
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
V
BIAS
R1
R2
C6
C1
C2
C3
Z17
C4
C5
V
SUPPLY
Z6
RF
INPUT
R3
Z1
C7
Z2
Z3
Z4
Z5
Z7
DUT
Z8
Z9
Z10
Z11
Z12
Z13
Z14
C8
Z15
RF
OUTPUT
Z16
V
SUPPLY
C9
C10
C11
LIFETIME BUY
Z1
Z2
Z3
Z4
Z5
Z6
Z7, Z8
Z9
Z10
0.250″ x 0.083″ Microstrip
0.750″ x 0.083″ Microstrip
0.375″ x 0.425″ Microstrip
0.370″ x 0.083″ Microstrip
0.365″ x 1.000″ Microstrip
0.650″ x 0.080″ Microstrip
0.115″ x 1.000″ Microstrip
0.240″ x 1.000″ Microstrip
0.310″ x 0.315″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.225″ x 0.083″ Microstrip
0.325″ x 0.500″ Microstrip
0.450″ x 0.083″ Microstrip
0.300″ x 0.245″ Microstrip
0.195″ x 0.083″ Microstrip
1.150″ x 0.070″ Microstrip
1.150″ x 0.083″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S19060NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S19060NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
100 nF Chip Capacitor
6.8 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
1 kΩ, 1/4 W Chip Resistor
10 kΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
CDR33BX104AKYS
ATC100B6R8BT250XT
GRM55DR61H106KA88L
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
Kemet
ATC
Murata
Vishay
Vishay
Vishay
C1
C2, C3, C7, C8, C9
C4, C5, C6, C10, C11
R1
R2
R3
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C4
R2
C6
C1
C2
R3
CUT OUT AREA
C3
C5
C7
C8
C9
LIFETIME BUY
C10 C11
MRF6S19060N/NB Rev. 2
Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout
MRF6S19060NR1 MRF6S19060NBR1
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R1
TYPICAL CHARACTERISTICS
16.6
16.5
16.4
G
ps
, POWER GAIN (dB)
16.3
16.2
16.1
16
15.9
15.8
15.7
ACPR
IM3
IRL
η
D
V
DD
= 28 Vdc, P
out
= 12 W (Avg.)
I
DQ
= 610 mA, 2--Carrier N--CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
η
D
, DRAIN
EFFICIENCY (%)
G
ps
27
26
25.5
25
--30
--36
--42
--48
--54
IM3 (dBc), ACPR (dBc)
--10
--14
--18
--22
--26
--30
--60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
LIFETIME BUY
Figure 3. 2-
-Carrier N-
-CDMA Broadband Performance @ P
out
= 12 Watts Avg.
16.2
16.1
16
G
ps
, POWER GAIN (dB)
15.9
15.8
15.7
15.6
15.5
15.4
15.3
ACPR
IM3
IRL
η
D
38.5
38
37.5
V
DD
= 28 Vdc, P
out
= 24 W (Avg.)
I
DQ
= 610 mA, 2--Carrier N--CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
37
36.5
--20
--25
--30
--35
--40
η
D
, DRAIN
EFFICIENCY (%)
G
ps
IM3 (dBc), ACPR (dBc)
--10
--14
--18
--22
--26
--30
--45
15.2
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2-
-Carrier N-
-CDMA Broadband Performance @ P
out
= 24 Watts Avg.
18
17
763 mA
610 mA
458 mA
15
14
13
12
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200
305 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--20
--30
--40
--50
--60
I
DQ
= 915 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
16
915 mA
I
DQ
= 305 mA
458 mA
763 mA
10
610 mA
1
100
200
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19060NR1 MRF6S19060NBR1
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
26.5
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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