1N6840U3 and 1N6841U3
35 and 45 VOLT, 10 AMP DUAL SCHOTTKY
COMMON CATHODE CENTER TAP RECTIFIER
Qualified per MIL-PRF-19500/678
DESCRIPTION
These low-profile 1N6840U3 and 1N6841U3 dual schottky rectifier devices are military
qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous
other products to meet higher and lower power voltage regulation applications.
Qualified Levels:
JAN, JANTX, and
JANTXV
Compliant
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
Surface mount equivalent of JEDEC registered 1N6840 and 1N6841.
Low profile ceramic SMD.
JAN, JANTX, JANTXV qualifications available per MIL-PRF-19500/678.
RoHS compliant by design.
U3 (SMD-0.5)
Package
APPLICATIONS / BENEFITS
•
•
•
•
•
•
High surge rating.
Low reverse leakage current.
Low forward voltage.
Seam welded package.
Low power loss.
Ultrasonic aluminum wire bonds.
MAXIMUM RATINGS PER LEG
@ T
C
= +25 C unless otherwise noted
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Case
(each individual diode)
Peak Working Reverse Voltage
Symbol
T
J
and T
STG
R
ӨJC
1N6840U3
1N6841U3
V
RWM
C
J
o
Value
-65 to +150
2.8
35
45
400
10
200
Unit
o
C
o
C/W
V
pF
A
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Junction Capacitance
o
(2)
Average Rectified Output Current @ T
C
= +100 C
Surge Peak Forward Current @ t
p
= 8.3 ms
I
O
I
FSM
NOTES:
1. 1.7 ºC/W both legs tied together.
2. Derate linearly at 200 mA/ºC from T
J
= T
C
= +100 ºC to +150 ºC.
T4-LDS-0127, Rev. 2 (121218)
©2012 Microsemi Corporation
Page 1 of 5
1N6840U3 and 1N6841U3
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic and gold over nickel plated steel.
TERMINALS: Gold over nickel plated tungsten/copper.
MARKING: Manufacturer ID, part number, date code, common cathode symbol.
POLARITY: See
schematic
on last page.
WEIGHT: 0.9 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
1N6840
U3
SMD-0.5 Surface Mount
Symbol
C
J
I
FM
I
R
T
J
V
F
V
R
SYMBOLS & DEFINITIONS
Definition
Junction Capacitance: The junction capacitance in pF at a specified frequency (typically 1MHz) and specified voltage.
Maximum Forward Current: The maximum forward current dc value, no alternating component.
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Junction Temperature: The temperature of a semiconductor junction.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
T4-LDS-0127, Rev. 2 (121218)
©2012 Microsemi Corporation
Page 2 of 5
1N6840U3 and 1N6841U3
ELECTRICAL CHARACTERISTICS PER LEG
@ T
A
= +25 C unless otherwise noted
Parameters / Test Conditions
Instantaneous Forward Voltage Drop
I
FM
= 3 A, T
A
= 25 °C, 300
µs
Pulse
I
FM
= 10 A, T
A
= 25 °C, 300
µs
Pulse
I
FM
= 20 A, T
A
= 25 °C, 300
µs
Pulse
Instantaneous Forward Voltage Drop
I
F
= 10 A, T
A
= 100 °C, 300
µs
Pulse
I
F
= 20 A, T
A
= 100 °C, 300
µs
Pulse
I
F
= 10 A, T
A
= -55 ºC, 300
µs
Pulse
Reverse Leakage Current
Rated V
R
, T
A
= 25 °C,
300
µs
pulse minimum
Reverse Leakage Current
Rated V
R
, T
A
= 100 °C,
300
µs
pulse minimum
Junction Capacitance
V
R
= 5 V, T
A
= 25 °C, f = 1 MHz
V
SG
= 50 mV (p-p) (max)
Symbol
Min.
Max.
0.62
0.75
0.88
0.63
0.70
0.85
Unit
o
V
F
V
V
F
V
1N6840U3, V
R
= 35 V
1N6841U3, V
R
= 45 V
1N6840U3, V
R
= 35 V
1N6841U3, V
R
= 45 V
I
R
100
µA
I
R
15
mA
C
J
400
pF
T4-LDS-0127, Rev. 2 (121218)
©2012 Microsemi Corporation
Page 3 of 5
1N6840U3 and 1N6841U3
GRAPHS
Max. Forward Current Rating (%)
Lead Temperature
°C
FIGURE 1
Typical Operating Curves
(T
A
= 25 °C Unless otherwise specified)
Forward Amperes
Forward Voltage
FIGURE 2
1N6841 V
F
vs. I
F
T4-LDS-0127, Rev. 2 (121218)
©2012 Microsemi Corporation
Page 4 of 5
1N6840U3 and 1N6841U3
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
Symbol
A
B
C
D
E
F
G
H
I
J
K
L
Term 1
Term 2
Term 3
Schematic
DIMENSIONS
INCH
MILLIMETERS
Min
Max
Min
Max
0.111
0.122
2.82
3.10
0.291
0.301
7.39
7.65
0.395
0.405
10.03
10.29
0.281
0.291
7.14
7.39
0.220
0.230
5.59
5.84
0.115
0.125
2.92
3.18
2.29
2.54
0.090
0.100
3.18
3.43
0.125
0.135
0.073 TYP.
1.85 TYP.
0.083 TYP.
2.11 TYP.
0.005 TYP.
0.13 TYP.
0.015 TYP.
0.38 TYP.
Common Cathode
Anode 1 (See Schematic)
Anode 2 (See Schematic)
T4-LDS-0127, Rev. 2 (121218)
©2012 Microsemi Corporation
Page 5 of 5
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