NTMFS4899NF
Power MOSFET
Features
30 V, 75 A, Single N−Channel, SO−8 FL
•
•
•
•
•
Integrated Schottky Diode
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
R
DS(ON)
MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
I
D
MAX
75 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
•
Low Side Switching
N−CHANNEL MOSFET
D
Unit
V
V
A
G
S
30
±20
17.8
12.9
P
D
I
D
2.70
29.1
21
P
D
I
D
7.18
10.4
7.5
P
D
I
D
0.92
75
54
P
D
I
DM
I
Dmaxpkg
T
J
,
T
STG
I
S
dV/dt
EAS
48
188
90
−55
to
+150
46
6
84
W
A
A
°C
A
V/ns
mJ
NTMFS4899NFT3G
W
A
W
1
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
v
10 sec
Power Dissipation
R
qJA,
t
v
10 sec
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
Symbol
V
DSS
V
GS
I
D
Value
W
A
MARKING
DIAGRAM
D
S
S
S
G
D
4899NF
AYWZZ
D
D
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4899NFT1G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 41 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
©
Semiconductor Components Industries, LLC, 2012
September, 2012
−
Rev. 3
1
Publication Order Number:
NTMFS4899NF/D
NTMFS4899NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient
−
t
v
10 sec
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
2.6
46.3
136.2
17.4
°C/W
Unit
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size (50 mm
2
, 1 oz Cu).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
12.6
20.3
20
4.2
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1600
360
165
12.2
1.6
4.6
4.6
25
nC
nC
pF
g
FS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 15 A
V
GS
= V
DS
, I
D
= 1.0 mA
1.5
10
3.9
3.8
6.0
5.8
57
S
7.5
5.0
mW
2.5
V
mV/°C
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
V
GS
= 0 V, I
D
= 1.0 mA
30
27
500
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4899NF
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 2.0 A
T
J
= 25°C
T
J
= 125°C
0.45
0.43
19
9.2
9.8
5.7
nC
ns
0.70
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.8
18.5
25.9
2.5
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.38
0.005
1.84
1.5
2.4
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4899NF
TYPICAL CHARACTERISTICS
180
160
I
D
, DRAIN CURRENT (A)
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5
6V
7 V to
10 V
V
GS
= 4.6 V
4.8 V
5V
T
J
= 25°C
4.4 V
4V
3.8 V
3.6 V
3.4 V
3.2 V
3V
2.8 V
2.6 V
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
4.2 V
180
160 V
DS
= 10 V
140
120
100
80
60
40
20
0
1
T
J
= 25°C
T
J
=
−55°C
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
1.1E−02
1E−02
9E−03
8E−03
7E−03
6E−03
5E−03
4E−03
3E−03
3.0
4.0
5.0
6.0
7.0
8.0
9.0
ID = 30 A
T
J
= 25°C
9E−03
8E−03
7E−03
6E−03
5E−03
4E−03
3E−03
2E−03
10
20
30
40
50
60
70
80
90 100
V
GS
= 10 V
T
J
= 25°C
V
GS
= 4.5 V
10.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Region versus V
GS
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
−50
1.0E−01
ID = 30 A
V
GS
= 10 V
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
V
GS
= 0 V
1.0E−02
I
DSS
, LEAKAGE (A)
1.0E−03
1.0E−04
1.0E−05
1.0E−06
T
J
= 25°C
T
J
= 150°C
T
J
= 125°C
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTMFS4899NF
TYPICAL CHARACTERISTICS
2000
1800
C, CAPACITANCE (pF)
1600
1400
1200
1000
800
600
400
200
0
0
C
oss
C
rss
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
30
C
iss
T
J
= 25°C
V
GS
= 0 V
11
10
9
8
7
6
5
4
3
2
1
0
0
Q
gs
Q
gd
I
D
= 30 A
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
25
Q
T
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5
10
15
20
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
ID = 15 A
V
GS
= 10 V
100
t, TIME (ns)
30
25
20
15
10
5
0
0.1
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
t
d(off)
t
f
t
r
10
t
d(on)
1
1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10
1
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
V
GS
= 30 V
Single Pulse
T
C
= 25°C
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
90
80
70
60
50
40
30
20
10
0
25
10
R
G
, GATE RESISTANCE (W)
100
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.9
Figure 10. Diode Forward Voltage vs. Current
I
D
= 41 A
I
D
, DRAIN CURRENT (A)
10
ms
100
ms
1 ms
10 ms
dc
0.01
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
50
75
100
125
T
J
, STARTING JUNCTION TEMPERATURE(°C)
150
1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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