NTMFS4C55N
Power MOSFET
30 V, 78 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
(BR)DSS
30 V
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Applications
R
DS(ON)
MAX
3.4 mW @ 10 V
I
D
MAX
78 A
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
Steady
State
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
A
= 25°C
T
A
= 80°C
T
A
= 25°C
T
C
= 25°C
T
C
=80°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
21.7
16.3
2.57
34.8
26.0
6.6
11.9
8.9
0.77
78
58
33
174
80
−55 to
+150
30
7.0
84
W
A
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
5.0 mW @ 4.5 V
D (5−8)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4C55N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
ORDERING INFORMATION
Device
NTMFS4C55NT1G
NTMFS4C55NT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L
= 41 A
pk
,
L = 0.1 mH, R
GS
= 25
W)
(Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 29 A, E
AS
= 42 mJ.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 1
Publication Order Number:
NTMFS4C55N/D
NTMFS4C55N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t
≤
10 s) (Note 4)
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
3.8
48.6
161.7
19
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D(aval)
= 12.6 A,
T
case
= 25°C, t
transient
= 100 ns
30
34
12
1.0
10
±100
V
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.3
5.1
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 30 A
2.7
4.0
68
1.0
3.4
5.0
mW
S
W
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
g
FS
R
G
V
DS
= 1.5 V, I
D
= 15 A
T
A
= 25°C
C
ISS
C
OSS
C
RSS
C
RSS
/C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
1972
1215
59
0.030
14
3.3
6.0
5.0
3.1
30
V
nC
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
11
32
21
7.0
ns
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4C55N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.77
0.62
40.2
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
20.3
19.9
30.2
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.0
26
26
5.0
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
6. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4C55N
TYPICAL CHARACTERISTICS
140
130 10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
140
130 V
DS
= 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
T
J
= 25°C
4 V to 6.5 V
I
D
, DRAIN CURRENT (A)
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
3
4
5
I
D
, DRAIN CURRENT (A)
3.8 V
3.6 V
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
Figure 2. Transfer Characteristics
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
0.007
0.006
0.005
0.004
0.003
0.002
10
V
GS
= 4.5 V
V
GS
= 10 V
4.0
5.0
6.0
7.0
8.0
9.0
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.7
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
10
−25
0
25
50
75
100
125
150
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS4C55N
TYPICAL CHARACTERISTICS
3000
2750
2500
C, CAPACITANCE (pF)
2250
2000
1750
1500
1250
1000
750
500
250
0
C
rss
0
5
10
15
20
25
30
C
iss
C
oss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
Q
gs
Q
gd
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
4
8
12
16
20
24
28
32
4
2
0
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
20
18
t
d(off)
t
d(on)
t
r
t
f
10
16
14
12
10
8
6
4
2
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
10
ms
100
ms
1 ms
10
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
10 ms
45
40
35
30
25
20
15
10
5
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 29 A
I
D
, DRAIN CURRENT (A)
100
1
dc
0.1
0.01
100
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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