PD - 96411A
IRFTS9342PbF
HEXFET
®
Power MOSFET
V
DS
V
GS max
R
DS(on) max
(@V
GS
= -10V)
-30
±20
40
66
12
-5.8
V
V
mΩ
mΩ
nC
A
D
D
1
6
A
D
2
5
D
R
DS(on) max
(@V
GS
= -4.5V)
G
3
4
S
Q
g typ
I
D
(@T
A
= 25°C)
Top View
TSOP-6
Applications
l
l
Battery operated DC motor inverter MOSFET
System/Load Switch
Features and Benefits
Features
Industry-Standard TSOP-6 Package
results in
RoHS Compliant Containing no Lead, no Bromide and no Halogen
⇒
MSL1, Consumer Qualification
Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFTS9342TRPbF
Package Type
TSOP-6
Standard Pack
Form
Quantity
Tape and Reel
3000
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Max.
-30
±20
-5.8
-4.6
-46
2.0
1.3
0.02
-55 to + 150
Units
V
c
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
Notes
through
are on page 2
www.irf.com
1
02/29/12
IRFTS9342PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
19
32
53
–––
-5.5
–––
–––
–––
–––
–––
12
1.8
3.1
17
4.6
13
45
28
595
133
85
–––
–––
40
66
-2.4
Conditions
V V
GS
= 0V, I
D
= -250μA
mV/°C Reference to 25°C, I
D
= -1mA
mΩ
V
V
GS
= -10V, I
D
= -5.8A
V
GS
= -4.5V, I
D
= -4.6A
e
e
V
DS
= V
GS
, I
D
= -25μA
––– mV/°C
-1.0
V
DS
= -24V, V
GS
= 0V
μA
-150
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
–––
S V
DS
= -10V, I
D
= -4.6A
–––
V
DS
= -15V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Ω
ns
V
DD
= -15V, V
GS
= -10V
I
D
= -4.6A
R
G
= 6.8Ω
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0KHz
V
GS
= -10V
I
D
= -4.6A
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
11
-2.0
A
-46
-1.2
30
17
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -4.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -4.6A, V
DD
= -24V
di/dt = 100A/μs
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJA
Junction-to-Ambient
e
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
2
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IRFTS9342PbF
100
TOP
VGS
-10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
100
TOP
VGS
-10V
-7.0V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-ID, Drain-to-Source Current (A)
10
BOTTOM
-ID, Drain-to-Source Current (A)
10
BOTTOM
1
-2.8V
-2.8V
1
≤
60μs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
10
100
≤
60μs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -5.8A
1.4
-I D, Drain-to-Source Current (A)
VGS = -10V
10
1.2
T J = 150°C
1
T J = 25°C
VDS = -15V
≤60μs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
1.0
0.8
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
-V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= -4.6A
VDS= -24V
VDS= -15V
C, Capacitance (pF)
1000
Ciss
Coss
VDS= -6.0V
100
Crss
10
1
10
-VDS, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
12
14
16
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFTS9342PbF
100
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
-I SD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
100μsec
10
T J = 150°C
T J = 25°C
10
1msec
10msec
1
DC
1
0.1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
-V SD, Source-to-Drain Voltage (V)
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
6
5
-I D, Drain Current (A)
-V GS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
ID = -25μA
ID = -250μA
ID = -1.0mA
ID = -10mA
ID = -1.0A
4
3
2
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
100
D = 0.50
Thermal Response ( Z thJA ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
10
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFTS9342PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
ID = -5.8A
80
RDS(on), Drain-to -Source On Resistance ( mΩ)
100
220
200
180
160
140
120
100
80
60
40
20
0
10
20
30
40
50
-I D, Drain Current (A)
Vgs = -10V
Vgs = -4.5V
60
TJ = 125°C
40
T J = 25°C
20
0
2
4
6
8
10
12
14
16
18
20
Fig 12.
On-Resistance vs. Gate Voltage
120
EAS , Single Pulse Avalanche Energy (mJ)
-V GS, Gate -to -Source Voltage (V)
Fig 13.
Typical On-Resistance vs. Drain Current
100
90
80
70
Power (W)
100
80
60
40
20
0
25
50
75
ID
TOP
-0.91A
-1.4A
BOTTOM -4.6A
60
50
40
30
20
10
0
0.0001
0.001
0.01
0.10
1
10
100
125
150
Starting T J , Junction Temperature (°C)
Time (sec)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
Fig 15.
Typical Power vs. Time
D.U.T
*
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
V
GS
=10V
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
-
-
+
R
G
•
•
•
•
di/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
V
DD
V
DD
+
-
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Current
Inductor Curent
Ripple
≤
5%
I
SD
*
Reverse Polarity of D.U.T for P-Channel
*
V
GS
= 5V for Logic Level Devices
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Fig 16.
Diode Reverse Recovery Test Circuit
for P-Channel HEXFET
®
Power MOSFETs
5
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