IS43LR32100C
IS46LR32100C
512K x 32Bits x 2Banks Mobile DDR SDRAM
Description
The IS43/46LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32
bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2
N
prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully
synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched
to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Features
• JEDEC standard 1.8V power supply
• Two internal banks for concurrent operation
• MRS cycle with address key programs
- CAS latency 2, 3 (clock)
- Burst length (2, 4, 8, 16)
- Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising
edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
• DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• 64ms refresh period (4K cycle)
• Auto & self refresh
• Concurrent Auto Precharge
• Maximum clock frequency up to 166MHz
• Maximum data rate up to 333Mbps/pin
• Power Saving support
- PASR (Partial Array Self Refresh)
-
Auto TCSR (Temperature Compensated Self Refresh)
- Deep Power Down Mode
- Programmable Driver Strength Control by Full Strength
or 1/2, 1/4, 1/8 of Full Strength
• LVCMOS compatible inputs/outputs
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. A | August 2014
www.issi.com
- dram@issi.com
1
IS43/46LR32100C
Table2 : Pin Descriptions
Symbol
Type
Function
Descriptions
The system clock input. CK and /CK are differential clock
inputs. All address and control input signals are registered on
the crossing of the rising edge of CK and falling edge of /CK.
Input and output data is referenced to the crossing of CK and
/CK.
CKE is clock enable controls input. CKE HIGH activates, and
CKE LOW deactivates internal clock signals, and device input
buffers and output drivers. CKE is synchronous for all functions
except for SELF REFRESH EXIT, which is achieved
asynchronously.
/CS enables (registered Low) and disables (registered High)
the command decoder. All commands are masked when /CS
IS REGISTERED high. /CS provides for external bank selection
on systems with multiple banks. /CS is considered part of the
command code.
BA defines to which bank an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied.
BA also determines which mode register (standard mode
register or extended mode register) is loaded during a LOAD
MODE REGISTER command.
Row Address
Column Address
Auto Precharge
: RA0~RA10
: CA0~CA7
: A10
CK, /CK
Input
System Clock
CKE
Input
Clock Enable
/CS
Input
Chip Select
BA
Input
Bank Address
A0~A10
Input
Address
Row Address Strobe,
Column Address Strobe,
Write Enable
/RAS, /CAS, /WE
Input
/RAS, /CAS and /WE define the operation.
Refer function truth table for details.
DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH along with that input
data during a WRITE access. DM is sampled on both edges of
DQS. Although DM balls are input-only.
DM0~DM3
Input
Data Input Mask
DQ0~DQ31
In/Output
Data Input/Output
Data input/output pin.
DQS0~DQS3
VDD
VSS
VDDQ
VSSQ
NC
In/Output
Supply
Supply
Supply
Supply
NC
Data Input/Output
Strobe
Power Supply
Ground
DQ Power Supply
DQ Ground
No Connection
Output with read data, input with write data. DQS is edge-
aligned with read data, centered in write data. Data strobe is
used to capture data.
Power supply
Ground
Power supply for DQ
Ground for DQ
No connection.
Rev. A | August 2014
www.issi.com
- dram@issi.com
3
IS43/46LR32100C
Figure3 : Simplified State Diagram
Power
Applied
Power
On
DPDSX
Deep Power
Down
DPDS
Precharge
All Banks
REFSX
REFS
MRS
EMRS
MRS
Idle
All Banks
Precharged
CKEH
Active
Power
Down
ACT
CKEH
REFA
CKEL
Precharge
Power
Down
Auto
Refresh
Self
Refresh
CKEL
Row
Active
READ
WRITE A
READ A
READ
Burst
Stop
READ
WRITE
WRITE
BST
WRITE
READ
WRITE A
PRE
WRITE A
PRE
PRE
READ A
READ A
PRE
Precharge
PREALL
Automatic
sequence
ACT = Active
BST = Burst
CKEL = Enter Power- Down
CKEH = Exit Power-Down
DPDS = Enter Deep Power-Down
DPDSX = Exit Deep Power- Down
EMRS = Ext. Mode Reg. Set
MRS = Mode Register Set
PRE = Precharge
PREALL= Precharge All Banks
REFA = Auto Refresh
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
READ = Read w/o Auto Precharge
READ A = Read with Auto Precharge
WRITE = Write w/o Auto Precharge
WRITE A = Write with Auto Precharge
Rev. A | August 2014
www.issi.com
- dram@issi.com
5
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