* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72151
S11-0209-Rev. F, 14-Feb-11
www.vishay.com
1
Si4392DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
a
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Test Conditions
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12.5 A
V
GS
= 4.5 V, I
D
= 10.0 A
V
DS
= 15 V, I
D
= 12.5 A
I
S
= 2.7 A, V
GS
= 0 V
Min.
1.0
Typ.
Max.
3.0
± 100
1
5
Unit
V
nA
µA
A
30
0.008
0.011
40
0.73
10
1.1
15
0.00975
0.01375
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 12.5 A
0.5
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 6
I
F
= 2.7 A, dI/dt = 100 A/µs
3.5
2.6
1.6
15
5
45
8
30
2.7
25
10
70
15
60
nC
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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